J.V. Thordson

400 total citations
32 papers, 352 citations indexed

About

J.V. Thordson is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, J.V. Thordson has authored 32 papers receiving a total of 352 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Atomic and Molecular Physics, and Optics, 19 papers in Electrical and Electronic Engineering and 13 papers in Condensed Matter Physics. Recurrent topics in J.V. Thordson's work include Semiconductor Quantum Structures and Devices (28 papers), Semiconductor materials and devices (14 papers) and GaN-based semiconductor devices and materials (13 papers). J.V. Thordson is often cited by papers focused on Semiconductor Quantum Structures and Devices (28 papers), Semiconductor materials and devices (14 papers) and GaN-based semiconductor devices and materials (13 papers). J.V. Thordson collaborates with scholars based in Sweden, Germany and United Kingdom. J.V. Thordson's co-authors include T. G. Andersson, Thomas Andersson, B. Ḿonemar, Г. Позина, Ivan G. Ivanov, U. Södervall, N. A. Stolwijk, Weiqiu Chen, S. M. Wang and Qiming Zhao and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J.V. Thordson

31 papers receiving 343 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.V. Thordson Sweden 11 277 203 153 60 31 32 352
R. E. Mallard Canada 12 390 1.4× 438 2.2× 86 0.6× 122 2.0× 44 1.4× 38 524
G. Poiblaud France 10 362 1.3× 364 1.8× 91 0.6× 117 1.9× 29 0.9× 13 509
Bob Wilson 2 455 1.6× 455 2.2× 76 0.5× 109 1.8× 38 1.2× 4 570
Matt Grupen United States 11 301 1.1× 381 1.9× 143 0.9× 34 0.6× 29 0.9× 38 462
Kimihiro Ohta Poland 9 328 1.2× 259 1.3× 86 0.6× 108 1.8× 59 1.9× 22 428
K. Masuda Japan 12 183 0.7× 213 1.0× 63 0.4× 99 1.6× 25 0.8× 46 354
M. Ozeki Japan 12 364 1.3× 396 2.0× 105 0.7× 130 2.2× 54 1.7× 36 487
J. Vaitkus Lithuania 9 102 0.4× 206 1.0× 83 0.5× 39 0.7× 43 1.4× 14 283
P. Kaczor Poland 10 288 1.0× 334 1.6× 52 0.3× 138 2.3× 17 0.5× 31 454
S. Isozumi Japan 12 295 1.1× 282 1.4× 34 0.2× 61 1.0× 18 0.6× 24 359

Countries citing papers authored by J.V. Thordson

Since Specialization
Citations

This map shows the geographic impact of J.V. Thordson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.V. Thordson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.V. Thordson more than expected).

Fields of papers citing papers by J.V. Thordson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.V. Thordson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.V. Thordson. The network helps show where J.V. Thordson may publish in the future.

Co-authorship network of co-authors of J.V. Thordson

This figure shows the co-authorship network connecting the top 25 collaborators of J.V. Thordson. A scholar is included among the top collaborators of J.V. Thordson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.V. Thordson. J.V. Thordson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thordson, J.V., et al.. (2001). The Formation of Nitridation Damage during the Growth of GaN on GaAs(001). Japanese Journal of Applied Physics. 40(2R). 472–472. 11 indexed citations
2.
Thordson, J.V., et al.. (2000). Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE. Applied Surface Science. 166(1-4). 423–427. 2 indexed citations
3.
Thordson, J.V., et al.. (2000). Nanocrystals at MBE-grown GaN/GaAs(001) interfaces. Applied Surface Science. 166(1-4). 317–321. 1 indexed citations
4.
Позина, Г., P. O. Holtz, Bo E. Sernelius, et al.. (1999). Characteristics of Si d-Layers Embedded inGaAs. Physica Scripta. T79(1). 99–99. 3 indexed citations
5.
Thordson, J.V., et al.. (1999). Surface Reconstruction and Surface Morphology of GaN Grownby MBE on GaAs (001). Physica Scripta. T79(1). 198–198. 2 indexed citations
6.
Thordson, J.V., J. J. Harris, & M.R. Fahy. (1999). Detection of DX-like trapping centres in delta-doped pseudomorphic InxGa1−xAs quantum wells. Solid-State Electronics. 43(1). 141–145. 2 indexed citations
7.
Thordson, J.V., et al.. (1999). Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1−x alloys. Nanostructured Materials. 12(1-4). 425–428. 1 indexed citations
8.
Stolwijk, N. A., et al.. (1998). Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials. Physical Review Letters. 81(16). 3443–3446. 41 indexed citations
9.
Holtz, P. O., Bo E. Sernelius, Г. Позина, et al.. (1998). Si δ-layers embedded in GaAs. Applied Physics Letters. 73(25). 3709–3711. 1 indexed citations
10.
Позина, Г., Ivan G. Ivanov, B. Ḿonemar, J.V. Thordson, & T. G. Andersson. (1998). Optical Properties of GaNAs Grown by MBE. MRS Internet Journal of Nitride Semiconductor Research. 3. 1 indexed citations
11.
Позина, Г., Ivan G. Ivanov, B. Ḿonemar, J.V. Thordson, & T. G. Andersson. (1998). Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy. Journal of Applied Physics. 84(7). 3830–3835. 76 indexed citations
12.
Stolwijk, N. A., et al.. (1998). Arsenic Diffusion in Intrinsic Gallium Arsenide. MRS Proceedings. 527. 8 indexed citations
13.
Thordson, J.V., et al.. (1998). Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio. MRS Internet Journal of Nitride Semiconductor Research. 3. 11 indexed citations
14.
Ghisoni, M., O. Sjölund, Anders Larsson, et al.. (1997). A comparative study of strain relaxation effects on the performance of InGaAs quantum-well-based heterojunction phototransistors. IEEE Journal of Selected Topics in Quantum Electronics. 3(3). 768–779. 9 indexed citations
15.
Thordson, J.V., et al.. (1997). Surface Morphology and Structure of GaNxAs1−x. MRS Internet Journal of Nitride Semiconductor Research. 2. 10 indexed citations
16.
Chen, Weimin, et al.. (1996). The ordered–disordered transition in Si delta-doped GaAs. Applied Physics Letters. 68(24). 3464–3466. 4 indexed citations
17.
Sjölund, O., M. Ghisoni, Anders Larsson, J.V. Thordson, & Thomas Andersson. (1995). Partially relaxed multiquantum well InGaAs/AlGaAsheterojunction phototransistor operating at 955–970 nm. Electronics Letters. 31(21). 1870–1871. 2 indexed citations
18.
Nilsson, P. O., J. Kanski, J.V. Thordson, et al.. (1995). Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission. Physical review. B, Condensed matter. 52(12). R8643–R8645. 29 indexed citations
19.
Andersson, Thomas, et al.. (1994). Mediation of strain from In0.36Ga0.64As layers through GaAs barriers in multiple quantum well structures. Applied Physics Letters. 65(25). 3242–3244. 5 indexed citations
20.
Chen, Weiqiu, S. M. Wang, Thomas Andersson, & J.V. Thordson. (1993). Inverse parabolic quantum wells grown by molecular-beam epitaxy using digital and analog techniques. Physical review. B, Condensed matter. 48(19). 14264–14268. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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