F. Turco

414 total citations
21 papers, 345 citations indexed

About

F. Turco is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, F. Turco has authored 21 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 7 papers in Surfaces, Coatings and Films. Recurrent topics in F. Turco's work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (9 papers) and Electron and X-Ray Spectroscopy Techniques (6 papers). F. Turco is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (9 papers) and Electron and X-Ray Spectroscopy Techniques (6 papers). F. Turco collaborates with scholars based in France, Italy and United States. F. Turco's co-authors include J. Massies, J. P. Contour, M. C. Tamargo, D. M. Hwang, J. C. Guillaume, R. E. Nahory, C. J. Sandroff, H. H. Farrell, E. Kapon and J. L. de Miguel and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Turco

21 papers receiving 308 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Turco France 11 284 267 88 79 34 21 345
R. W. Streater Canada 12 250 0.9× 250 0.9× 105 1.2× 42 0.5× 78 2.3× 31 359
S. L. Skala United States 8 302 1.1× 157 0.6× 99 1.1× 40 0.5× 80 2.4× 17 371
C. A. Warwick United States 8 257 0.9× 197 0.7× 115 1.3× 28 0.4× 46 1.4× 16 327
C. J. Spindt United States 11 303 1.1× 290 1.1× 90 1.0× 103 1.3× 34 1.0× 14 398
R. Fernandez United States 10 217 0.8× 212 0.8× 51 0.6× 41 0.5× 28 0.8× 26 299
M. Ozeki Japan 12 364 1.3× 396 1.5× 130 1.5× 55 0.7× 54 1.6× 36 487
Koichi Kamon Japan 11 285 1.0× 306 1.1× 91 1.0× 26 0.3× 37 1.1× 15 380
T. Kikawa Japan 12 276 1.0× 364 1.4× 106 1.2× 33 0.4× 40 1.2× 28 438
J. Long United States 13 340 1.2× 401 1.5× 96 1.1× 24 0.3× 38 1.1× 18 468
K. L. Hess United States 10 315 1.1× 332 1.2× 104 1.2× 17 0.2× 41 1.2× 22 413

Countries citing papers authored by F. Turco

Since Specialization
Citations

This map shows the geographic impact of F. Turco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Turco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Turco more than expected).

Fields of papers citing papers by F. Turco

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Turco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Turco. The network helps show where F. Turco may publish in the future.

Co-authorship network of co-authors of F. Turco

This figure shows the co-authorship network connecting the top 25 collaborators of F. Turco. A scholar is included among the top collaborators of F. Turco based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Turco. F. Turco is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Brown, April S., et al.. (1996). Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature. Applied Physics Letters. 68(2). 220–222. 4 indexed citations
2.
Farrell, H. H., M. C. Tamargo, J. L. de Miguel, et al.. (1991). ‘‘Designer’’ interfaces in II-VI/III-V polar heteroepitaxy. Journal of Applied Physics. 69(10). 7021–7028. 25 indexed citations
3.
Turco, F., S. Simhony, Kathleen Kash, et al.. (1990). Molecular beam epitaxial growth of GaAs/AlAs and GaAs/AlGaAs quantum wells on sub-micron-period corrugated substrates. Journal of Crystal Growth. 104(4). 766–772. 16 indexed citations
4.
Turco, F., C. J. Sandroff, D. M. Hwang, T. S. Ravi, & M. C. Tamargo. (1990). High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces. Journal of Applied Physics. 68(3). 1038–1042. 8 indexed citations
5.
Turco, F., et al.. (1990). Thermal and chemical stability of Se-passivated GaAs surfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(4). 856–859. 23 indexed citations
6.
Turco, F., M. C. Tamargo, D. M. Hwang, et al.. (1990). Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy. Applied Physics Letters. 56(1). 72–74. 20 indexed citations
7.
Turco, F. & M. C. Tamargo. (1989). Growth studies of molecular-beam epitaxial ZnSe using reflection high-energy electron diffraction oscillations. Journal of Applied Physics. 66(4). 1695–1698. 7 indexed citations
8.
Tamargo, M. C., J. L. de Miguel, F. Turco, et al.. (1989). Multiple Chamber Molecular Beam Epitaxy Growth System: Growth Of GaAs/ZnSe Heterostructures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1037. 73–73. 4 indexed citations
9.
Turco, F. & J. Massies. (1989). Quantitative evaluation of the surface segregation in III–V ternary alloys by X-ray photoelectron spectroscopy. Applied Surface Science. 37(2). 160–166. 9 indexed citations
10.
Hong, Won-Pyo, et al.. (1989). Low-frequency noise characteristics of AlInAs/GaInAs modulation-doped field-effect transistors. Electronics Letters. 25(16). 1039–1040. 6 indexed citations
11.
Cingolani, R., M. Ferrara, M. Lugarà, et al.. (1988). Photoluminescence of Highly Excited GaAs/Al x Ga 1- x As Quantum Wells. Europhysics Letters (EPL). 7(7). 651–656. 9 indexed citations
12.
Turco, F., J. Massies, J. C. Guillaume, & J. P. Contour. (1988). Summary Abstract: Thermodynamic analysis of the molecular-beam epitaxy of Al1−xInxAs on InP and GaAs (001) substrates. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(2). 775–776. 1 indexed citations
13.
Mbaye, A. A., F. Turco, & J. Massies. (1988). Role of elastic strain and relaxation on the molecular-beam epitaxial growth of III-V alloy pseudomorphic layers. Physical review. B, Condensed matter. 37(17). 10419–10422. 8 indexed citations
14.
Turco, F., et al.. (1988). Morphology of GaAs and InP (001) Substrates after Different Preparation Procedures Prior to Epitaxial Growth. Journal of The Electrochemical Society. 135(2). 504–509. 10 indexed citations
15.
Cingolani, R., et al.. (1988). Optical investigations of GaAs/Ga1−x Al x As Quantum wells grown by molecular-beam epitaxy. Il Nuovo Cimento D. 10(9). 1093–1114. 4 indexed citations
16.
Turco, F., J. C. Guillaume, & J. Massies. (1988). Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloys. Journal of Crystal Growth. 88(2). 282–290. 26 indexed citations
17.
Turco, F. & J. Massies. (1987). Strain-induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy. Applied Physics Letters. 51(24). 1989–1991. 25 indexed citations
18.
19.
20.
Massies, J., et al.. (1986). A Chemical Etching Process to Obtain Clean InP {001} Surfaces. Japanese Journal of Applied Physics. 25(8A). L664–L664. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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