R. Bindemann

462 total citations
41 papers, 372 citations indexed

About

R. Bindemann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. Bindemann has authored 41 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in R. Bindemann's work include Semiconductor Quantum Structures and Devices (18 papers), Silicon Nanostructures and Photoluminescence (16 papers) and Thin-Film Transistor Technologies (14 papers). R. Bindemann is often cited by papers focused on Semiconductor Quantum Structures and Devices (18 papers), Silicon Nanostructures and Photoluminescence (16 papers) and Thin-Film Transistor Technologies (14 papers). R. Bindemann collaborates with scholars based in Germany and Czechia. R. Bindemann's co-authors include R. Schwabe, T. Drüsedau, K. Unger, W. Seifert, G. Kühn, F. Bugge, P. Fischer, T. Hänsel, B. Rheinländer and Karin Jacobs and has published in prestigious journals such as Physics Letters A, Journal of Non-Crystalline Solids and Solid State Communications.

In The Last Decade

R. Bindemann

40 papers receiving 347 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Bindemann Germany 12 249 245 170 66 16 41 372
R. J. Chicotka United States 12 407 1.6× 342 1.4× 129 0.8× 68 1.0× 41 2.6× 13 471
W. T. Dietze United States 14 438 1.8× 446 1.8× 134 0.8× 52 0.8× 38 2.4× 32 552
Yasuo Okuno Japan 12 392 1.6× 438 1.8× 213 1.3× 55 0.8× 28 1.8× 33 515
G. Lambert Denmark 10 219 0.9× 234 1.0× 114 0.7× 55 0.8× 41 2.6× 21 326
Koichi Kamon Japan 11 285 1.1× 306 1.2× 91 0.5× 116 1.8× 37 2.3× 15 380
J. T. Devreese Belgium 7 248 1.0× 121 0.5× 162 1.0× 74 1.1× 40 2.5× 10 335
F. Voillot France 14 344 1.4× 288 1.2× 189 1.1× 44 0.7× 38 2.4× 36 453
A. P. Silin Russia 11 256 1.0× 147 0.6× 149 0.9× 60 0.9× 34 2.1× 34 373
Seiji Kawata Japan 9 362 1.5× 305 1.2× 177 1.0× 51 0.8× 30 1.9× 11 420
S. M. Newstead United Kingdom 11 217 0.9× 305 1.2× 134 0.8× 24 0.4× 48 3.0× 28 367

Countries citing papers authored by R. Bindemann

Since Specialization
Citations

This map shows the geographic impact of R. Bindemann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Bindemann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Bindemann more than expected).

Fields of papers citing papers by R. Bindemann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Bindemann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Bindemann. The network helps show where R. Bindemann may publish in the future.

Co-authorship network of co-authors of R. Bindemann

This figure shows the co-authorship network connecting the top 25 collaborators of R. Bindemann. A scholar is included among the top collaborators of R. Bindemann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Bindemann. R. Bindemann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sachse, J.-U., et al.. (1993). Time-resolved transients of IR-stimulated luminescence and conductivity in a-Si:H. Journal of Non-Crystalline Solids. 164-166. 603–606. 2 indexed citations
2.
Drescher, Daniela, et al.. (1993). Photoelectrical properties of a-Si: H in dependence on growth conditions and degradation. physica status solidi (a). 138(1). 207–215. 1 indexed citations
3.
Bindemann, R., et al.. (1992). Relaxation and Recombination of Photoexcited Carriers in a‐Si: H Calculated by Monte‐Carlo Simulations. physica status solidi (b). 170(1). 339–351. 1 indexed citations
4.
Bindemann, R., et al.. (1991). On carrier lifetimes in a-Si: H comparison of Monte-Carlo simulations with frequency-resolved spectroscopy. Philosophical Magazine Letters. 64(5). 291–296. 1 indexed citations
5.
Bindemann, R., et al.. (1990). The Influence of Thermal Disorder on the Absorption Edge in the Tauc Region of a–Si:H. physica status solidi (b). 160(2). 11 indexed citations
6.
Drüsedau, T., et al.. (1988). Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputtering. physica status solidi (a). 108(1). 285–293. 17 indexed citations
7.
Drüsedau, T., et al.. (1987). The ordinary and generalized Meyer‐Neldel rule in a‐Si:H calculated by the statistical fermi level shift. physica status solidi (b). 140(1). 18 indexed citations
8.
Drüsedau, T. & R. Bindemann. (1986). The Meyer‐ Neldel Rule and the Fundamental Pre‐Exponential Factor in the Conductivity of a‐Si:H. physica status solidi (b). 136(1). 31 indexed citations
9.
10.
Hänsel, T., et al.. (1979). Determination of Nitrogen Concentration in GaP Epitaxial Layers by Two Independent Methods. Kristall und Technik. 14(8). 977–984. 8 indexed citations
11.
Breitenstein, Otwin, B. Rheinländer, & R. Bindemann. (1979). DLTS capacitance studies on deep level centres in VPE GaP: N. physica status solidi (a). 51(1). 79–86. 10 indexed citations
12.
Bindemann, R., R. Schwabe, & T. Hänsel. (1978). The “Quasidirect” Radiative Recombination of Free Holes at Neutral Shallow Donors in GaP. physica status solidi (b). 87(1). 169–177. 14 indexed citations
13.
Bindemann, R., et al.. (1977). Determination of the concentration of substitutional O in GaP by means of donor–acceptor pair luminescence. physica status solidi (a). 43(2). 529–533. 1 indexed citations
14.
Kühn, G., et al.. (1977). Spektrochemische Bestimmung von Silizium in AlxGa1–xAs und physikalische Eigenschaften der Kristalle. Kristall und Technik. 12(1). 93–100. 1 indexed citations
15.
Schwabe, R., et al.. (1977). Radiative recombination from electron-hole drops in n-doped GaP. Physics Letters A. 64(2). 226–228. 14 indexed citations
16.
Bindemann, R., et al.. (1976). Observation of nonexponential long time decay of donor-acceptor pair luminescence in GaP. physica status solidi (a). 34(1). K63–K65. 6 indexed citations
17.
Bindemann, R., et al.. (1975). Fine structured low temperature luminescence of CdP2. physica status solidi (b). 69(1). 1 indexed citations
18.
Bindemann, R., et al.. (1974). Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xP. physica status solidi (a). 24(2). K189–K192. 10 indexed citations
19.
Bindemann, R. & K. Unger. (1973). Energy States of Isolated Donor–Acceptor Pairs and the Influence of Polarization Interaction on the Pair Energy. physica status solidi (b). 56(2). 563–572. 18 indexed citations
20.
Bindemann, R., P. Fischer, G. Kühn, & K. Unger. (1970). Photoluminescence of AlAs monocrystals. physica status solidi (b). 42(2). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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