H. Asonen

1.1k total citations
75 papers, 838 citations indexed

About

H. Asonen is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Spectroscopy. According to data from OpenAlex, H. Asonen has authored 75 papers receiving a total of 838 indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Atomic and Molecular Physics, and Optics, 56 papers in Electrical and Electronic Engineering and 12 papers in Spectroscopy. Recurrent topics in H. Asonen's work include Semiconductor Quantum Structures and Devices (44 papers), Semiconductor Lasers and Optical Devices (32 papers) and Photonic and Optical Devices (16 papers). H. Asonen is often cited by papers focused on Semiconductor Quantum Structures and Devices (44 papers), Semiconductor Lasers and Optical Devices (32 papers) and Photonic and Optical Devices (16 papers). H. Asonen collaborates with scholars based in Finland, United States and Sweden. H. Asonen's co-authors include M. Pessa, R. S. Rao, Arun Bansil, A. Salokatve, Pekka Savolainen, A. Ovtchinnikov, M. Lindroos, M. Toivonen, Christopher J. Barnes and Rajendra Prasad and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

H. Asonen

68 papers receiving 708 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Asonen Finland 18 666 504 150 148 94 75 838
D. Bruchmann Germany 8 509 0.8× 348 0.7× 190 1.3× 330 2.2× 72 0.8× 9 780
Masashi Ozeki Japan 20 792 1.2× 711 1.4× 68 0.5× 299 2.0× 107 1.1× 92 1.1k
A. Salokatve United States 16 529 0.8× 538 1.1× 45 0.3× 183 1.2× 55 0.6× 69 687
Nicholas G. Norton United Kingdom 5 548 0.8× 358 0.7× 215 1.4× 236 1.6× 98 1.0× 6 809
P. A. Coon United States 14 472 0.7× 756 1.5× 150 1.0× 493 3.3× 99 1.1× 24 1.1k
E. Veuhoff Germany 15 855 1.3× 925 1.8× 58 0.4× 245 1.7× 97 1.0× 43 1.1k
G. Oelgart Germany 15 562 0.8× 426 0.8× 88 0.6× 201 1.4× 56 0.6× 92 729
Hitoshi Yasunaga Japan 15 522 0.8× 300 0.6× 56 0.4× 190 1.3× 113 1.2× 52 744
Teruo Hanawa Japan 14 588 0.9× 262 0.5× 289 1.9× 175 1.2× 110 1.2× 48 808
A. Lastras-Martı́nez Mexico 16 703 1.1× 596 1.2× 82 0.5× 339 2.3× 123 1.3× 80 1.0k

Countries citing papers authored by H. Asonen

Since Specialization
Citations

This map shows the geographic impact of H. Asonen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Asonen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Asonen more than expected).

Fields of papers citing papers by H. Asonen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Asonen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Asonen. The network helps show where H. Asonen may publish in the future.

Co-authorship network of co-authors of H. Asonen

This figure shows the co-authorship network connecting the top 25 collaborators of H. Asonen. A scholar is included among the top collaborators of H. Asonen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Asonen. H. Asonen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Toivonen, M., A. Salokatve, Kirsi Tappura, et al.. (2002). Solid source MBE for phosphide-based devices. 8. 79–82.
2.
Heinemann, Stefan H., et al.. (1997). 100 W cw Al-free 808 nm linear bar arrays. 482–483. 3 indexed citations
3.
Toivonen, M., et al.. (1995). All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm). Applied Physics Letters. 67(16). 2332–2334. 18 indexed citations
4.
Westergren, Urban, et al.. (1995). High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction. IEEE Electron Device Letters. 16(11). 479–481. 17 indexed citations
5.
Asonen, H., et al.. (1995). A Ga0.51In0.49P/GaAs‐based photovoltaic converter for two‐directional optical power and data transmission. Progress in Photovoltaics Research and Applications. 3(1). 57–63. 6 indexed citations
6.
Asonen, H., et al.. (1994). Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers. IEEE Journal of Quantum Electronics. 30(2). 415–423. 31 indexed citations
7.
Ovtchinnikov, A., et al.. (1993). GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 μm lasers. Journal of Crystal Growth. 127(1-4). 1033–1036. 5 indexed citations
8.
Hakkarainen, T., et al.. (1992). Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE. Journal of Crystal Growth. 120(1-4). 172–176. 1 indexed citations
9.
Ovtchinnikov, A., et al.. (1992). Effects of rapid thermal annealing on lasing properties of InGaAs/GaAs/GaInP quantum well lasers. Journal of Applied Physics. 72(8). 3788–3791. 25 indexed citations
10.
Tappura, Kirsi, et al.. (1991). The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy. Journal of Crystal Growth. 112(1). 27–32. 7 indexed citations
11.
Keskinen, Jari, et al.. (1991). Graded-index strained multiquantum-well GaInAsP lasers grown by gas-source molecular-beam epitaxy: Growth and characterization. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(2). 239–242. 4 indexed citations
12.
Asonen, H., et al.. (1990). Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy. Journal of Crystal Growth. 105(1-4). 101–105. 17 indexed citations
13.
Keskinen, Jari, et al.. (1989). Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxy. Journal of Crystal Growth. 95(1-4). 522–524. 13 indexed citations
14.
Pessa, M., et al.. (1989). A comparative study of molecular beam epitaxy methods. physica status solidi (a). 116(2). 443–455. 1 indexed citations
15.
Asonen, H., et al.. (1987). New approach to growth of high-quality GaAs layers on Si substrates. Applied Physics Letters. 51(22). 1801–1803. 26 indexed citations
16.
Salokatve, A., et al.. (1987). Reduction of surface defects in GaAs grown by molecular beam epitaxy. Applied Physics Letters. 51(17). 1340–1342. 17 indexed citations
17.
Asonen, H., M. Pessa, R. S. Rao, & Arun Bansil. (1985). Interpretation of a new feature in photoemission from Cu based alloys with polyvalent solutes. Surface Science. 155(1). 203–214. 1 indexed citations
18.
Bansil, Arun, R. S. Rao, R. Prasad, H. Asonen, & M. Pessa. (1984). An angle-resolved photoemission study of Cu96Ge4and Cu89Ge11single crystals. Journal of Physics F Metal Physics. 14(1). 273–279. 8 indexed citations
19.
Pessa, M., H. Asonen, R. S. Rao, Rajendra Prasad, & Arun Bansil. (1982). Surface electronic states in alloys: Copper-aluminium. Surface Science. 117(1-3). 371–375. 5 indexed citations
20.
Asonen, H. & M. Pessa. (1981). Photoemission Observation of an Intrinsic Surface-State Band in a DisorderedCu0.9Al0.1(111) Alloy. Physical Review Letters. 46(26). 1696–1699. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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