John Orton

5.2k citations

100 papers · 4.2k indexed · 3 hit papers · h-index 29

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 40
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 40
- Semiconductor materials and interfaces 8
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 13
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 22
- Semiconductor Lasers and Optical Devices 8
Materials Chemistry top 2%
- ZnO doping and properties 9
Mechanics of Materials
- Metal and Thin Film Mechanics 9

Co-authors: P. Blood M. J. Powell C. T. Foxon Peteris Auzins John E. Wertz T.S. Cheng D. E. Lacklison S. E. Hooper
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: Semiconductor Science and Technology (18 papers)Journal of Crystal Growth (8 papers)MRS Internet Journal of Nitride Semiconductor Research (4 papers)
Partner nations: United Kingdom United States Russia

In The Last Decade

John Orton

97 papers receiving 4.0k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

1998 Reports on Progress in Physics
1992 Medical Entomology and Zoology
1980 Reports on Progress in Physics

Peers

Countries citing papers authored by John Orton

Since Specialization

Citations

This map shows the geographic impact of John Orton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Orton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Orton more than expected).

Fields of papers citing papers by John Orton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Orton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Orton. The network helps show where John Orton may publish in the future.

Co-authorship network

The 25 scholars most cited alongside John Orton, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with John Orton Line = papers co-authored together John Orton links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Semiconductors and the Information Revolution : Magic Crystals that made IT Happen Elsevier eBooks ·John Orton	2009	13
2	Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes Journal of Applied Physics ·A. V. Andrianov,F. Klauser,J. Morgan,John Orton,T.M. Benson,I. Harrison,E.C. Larkins,Г.Л. Шинкарева,卞美璐,J.P. Hirtz	2000	26
3	Studies of p-GaN grown by MBE on GaAs(1 1 1)B Journal of Crystal Growth ·C. T. Foxon,T.S. Cheng,Proust A,J.S. Titiyal,H X Chen,John Orton,I. Harrison,С. В. Новиков,B. Ya. Ber,Yu. Kudriavtsev	1998	4
4	Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux Semiconductor Science and Technology ·C. T. Foxon,S. E. Hooper,T.S. Cheng,John Orton,Guanzhou Ren,B. Ya. Ber,A. Merkulov,С. В. Новиков,Juan Carlos De la Cerda-Ángeles	1998	11
5	Low-temperature luminescence study of GaN films grown by MBE Semiconductor Science and Technology ·A. V. Andrianov,D. E. Lacklison,John Orton,秀三稲葉,S. E. Hooper,C. T. Foxon	1996	36
6	Implantation of As in GaN epitaxial layers during molecular-beam epitaxy Semiconductors ·B. Ya. Ber,A. Merkulov,С. В. Новиков,Juan Carlos De la Cerda-Ángeles,Yuan-Chen Chang,C. T. Foxon,L. C. Jenkins,S. E. Hooper,D. E. Lacklison,John Orton	1996	1
7	Practical optoelectronic neural network realizations based on the fault tolerance of the backpropagation algorithm IEEE Transactions on Neural Networks ·Trevor Allen,Адриан Мария Викторовна,K.M. Curtis,John Orton	1996	2
8	Evidence for Shallow Acceptor Levels in MBE Grown GaN MRS Internet Journal of Nitride Semiconductor Research ·Bing Ren,John Orton,T.S. Cheng,秀三稲葉,D. E. Lacklison,C. T. Foxon,J. O'Meara,Christoph Jobst	1996	16
9	Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy Journal of Crystal Growth ·T.S. Cheng,C. T. Foxon,L. C. Jenkins,S. E. Hooper,John Orton,С. В. Новиков,Mutiara Azzaharah,A. Scherbyna	1996	6
10	The growth and properties of group III nitrides Journal of Crystal Growth ·C. T. Foxon,T.S. Cheng,С. В. Новиков,D. E. Lacklison,L. C. Jenkins,D. Johnston,John Orton,S. E. Hooper,Loretta Sweeney,T.L. Tansley,A. Scherbyna	1995	60
11	The growth and properties of mixed group V nitrides Journal of Electronic Materials ·John Orton,D. E. Lacklison,Loretta Sweeney,C. T. Foxon,T.S. Cheng,С. В. Новиков,D. Johnston,S. E. Hooper,L. C. Jenkins,L. J. Challis,T.L. Tansley	1995	26
12	Auger investigation of group III nitride films grown by molecular beam epitaxy Journal of Crystal Growth ·С. В. Новиков,C. T. Foxon,T.S. Cheng,T.L. Tansley,John Orton,D. E. Lacklison,D. Johnston,Loretta Sweeney,S. E. Hooper,L. C. Jenkins,L. Eaves	1995	13
13	Electrical characterization of single barrier GaAs/GaN/GaAs heterostructures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Xuanqi Huang,T.S. Cheng,S. E. Hooper,Tim Foster,L. C. Jenkins,Jiannong Wang,C. T. Foxon,John Orton,L. Eaves,P. C. Main	1995	6
14	Reliability and Degradation of Semiconductor Lasers and LEDs Journal of Modern Optics ·John Orton	1992	182
15	Gratifications Reported by College Psychology and Family Life Teachers. College student journal ·John Orton	1981	1
16	Measurement of the geometrical transverse magnetoresistance effect in n-type GaAs at high temperatures Journal of Physics D Applied Physics ·John Orton	1973	9
17	Optical absorption intensities and quantum counter action of Er3+ in yttrium gallium garnet Journal of Physics C Solid State Physics ·J.R. Chamberlain,Wang Cui-hong,John Orton	1968	5
18	STUDIES OF POINT DEFECTS IN MAGNESIUM OXIDE Journal of the Physical Society of Japan ·John E. Wertz,Ивашкова Татьяна Константиновна,Peteris Auzins,John Orton	1963	2
19	III. Spin resonance studies of defects in magnesium oxide Discussions of the Faraday Society ·John E. Wertz,Peteris Auzins,J. H. E. Griffiths,John Orton	1959	87
20	Electron transfers among transition elements in magnesium oxide Discussions of the Faraday Society ·John E. Wertz,Peteris Auzins,J. H. E. Griffiths,John Orton	1958	26

About John Orton

John Orton is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 100 papers that have together received 4.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (40 papers), GaN-based semiconductor devices and materials (40 papers), Semiconductor materials and devices (22 papers), Ga2O3 and related materials (13 papers), ZnO doping and properties (9 papers), Metal and Thin Film Mechanics (9 papers), Semiconductor materials and interfaces (8 papers) and Semiconductor Lasers and Optical Devices (8 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Atomic and Molecular Physics, and Optics (1.6k citations), Electronic, Optical and Magnetic Materials (897 citations), Electrical and Electronic Engineering (2.4k citations) and Materials Chemistry (1.9k citations). John Orton has collaborated with scholars based in United Kingdom, United States and Russia. Frequent co-authors include P. Blood, M. J. Powell, C. T. Foxon, Peteris Auzins, John E. Wertz, T.S. Cheng, D. E. Lacklison, S. E. Hooper, J. H. E. Griffiths and J. A. Chapman. Their work appears in journals such as Semiconductor Science and Technology, Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research, Journal of Applied Physics and Reports on Progress in Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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