Wook Bahng

979 total citations
96 papers, 790 citations indexed

About

Wook Bahng is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Wook Bahng has authored 96 papers receiving a total of 790 indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Electrical and Electronic Engineering, 25 papers in Electronic, Optical and Magnetic Materials and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Wook Bahng's work include Silicon Carbide Semiconductor Technologies (86 papers), Semiconductor materials and devices (57 papers) and Copper Interconnects and Reliability (22 papers). Wook Bahng is often cited by papers focused on Silicon Carbide Semiconductor Technologies (86 papers), Semiconductor materials and devices (57 papers) and Copper Interconnects and Reliability (22 papers). Wook Bahng collaborates with scholars based in South Korea, Malaysia and Japan. Wook Bahng's co-authors include Kuan Yew Cheong, Nam‐Kyun Kim, Jeong Hyun Moon, Hyeong Joon Kim, Kazuo Arai, Hyoung Woo Kim, Sung‐Jae Joo, In-Ho Kang, Nam Kyun Kim and Tomohisa Kato and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Wook Bahng

89 papers receiving 766 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wook Bahng South Korea 15 732 183 159 147 91 96 790
Marco Mauceri Italy 15 819 1.1× 151 0.8× 252 1.6× 179 1.2× 89 1.0× 75 907
Marc French United States 13 400 0.5× 257 1.4× 198 1.2× 95 0.6× 43 0.5× 16 522
Franziska C. Beyer Sweden 17 467 0.6× 120 0.7× 224 1.4× 103 0.7× 45 0.5× 45 585
Mitsuru Sometani Japan 18 891 1.2× 134 0.7× 163 1.0× 130 0.9× 106 1.2× 67 927
Junji Senzaki Japan 21 1.5k 2.1× 192 1.0× 356 2.2× 247 1.7× 116 1.3× 103 1.6k
Florin Ciobanu Germany 14 712 1.0× 117 0.6× 168 1.1× 187 1.3× 70 0.8× 19 790
Christian Brylinski France 13 418 0.6× 136 0.7× 97 0.6× 109 0.7× 44 0.5× 51 489
Mong-Song Liang Taiwan 16 641 0.9× 162 0.9× 220 1.4× 78 0.5× 36 0.4× 51 715
K. A. Ellis United States 10 263 0.4× 143 0.8× 141 0.9× 137 0.9× 22 0.2× 18 415
Grazia Litrico Italy 11 323 0.4× 104 0.6× 80 0.5× 65 0.4× 35 0.4× 41 384

Countries citing papers authored by Wook Bahng

Since Specialization
Citations

This map shows the geographic impact of Wook Bahng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wook Bahng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wook Bahng more than expected).

Fields of papers citing papers by Wook Bahng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wook Bahng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wook Bahng. The network helps show where Wook Bahng may publish in the future.

Co-authorship network of co-authors of Wook Bahng

This figure shows the co-authorship network connecting the top 25 collaborators of Wook Bahng. A scholar is included among the top collaborators of Wook Bahng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wook Bahng. Wook Bahng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hong, Soon‐Ku, Wook Bahng, Chan‐Hyoung Oh, et al.. (2025). Overlaid Shockley- and Frank-type stacking faults in 4H-SiC epitaxial layers. Applied Surface Science. 703. 163425–163425. 1 indexed citations
2.
Kim, Young Jo, Jeong Hyun Moon, Hyoung Woo Kim, et al.. (2024). Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs). Journal of Science Advanced Materials and Devices. 9(3). 100765–100765. 1 indexed citations
3.
4.
Bahng, Wook, et al.. (2024). Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers. Materials Science in Semiconductor Processing. 175. 108247–108247. 9 indexed citations
5.
Bahng, Wook, et al.. (2022). The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography. Journal of the Korean Physical Society. 80(2). 175–184. 2 indexed citations
6.
Bahng, Wook, et al.. (2021). Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer. Journal of Applied Physics. 129(24). 4 indexed citations
7.
Moon, Jeong Hyun, et al.. (2020). TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing. Current Applied Physics. 20(12). 1386–1390. 9 indexed citations
8.
Kim, Hyoung Woo, et al.. (2019). High-voltage LDIMOSFETs on HPSI 4H-SiC substrate with dual field plates. Physica Scripta. 94(10). 105809–105809. 2 indexed citations
9.
Kim, Sungmin, Hyunwoo Kim, Jeong Hyun Moon, et al.. (2019). Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO 2 /4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing. Physica Scripta. 94(12). 125811–125811. 3 indexed citations
10.
Kim, Youngjo, et al.. (2019). Micro-trench free 4H-SiC etching with improved SiC/SiO 2 selectivity using inductively coupled SF 6 /O 2 /Ar plasma. Physica Scripta. 95(4). 45606–45606. 9 indexed citations
11.
Moon, Jeong Hyun, et al.. (2017). Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2. JSTS Journal of Semiconductor Technology and Science. 17(2). 265–270. 2 indexed citations
12.
Moon, Jeong Hyun, et al.. (2016). Role of the oxidizing agent in the etching of 4H-SiC substrates with molten KOH. Journal of the Korean Physical Society. 69(11). 1677–1682. 8 indexed citations
13.
Moon, Jeong Hyun, et al.. (2015). Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode. Materials science forum. 821-823. 563–566. 5 indexed citations
14.
Shin, Yunne‐Jai, S. I., Hae Young Choi, et al.. (2012). Selective Survival of Double-Walled CNTs after In Situ H2 Plasma Treatment of Vertically-Grown Multi-Walled CNTs. ECS Solid State Letters. 1(4). M24–M26. 1 indexed citations
15.
Kang, Minseok, Sung‐Jae Joo, Wook Bahng, et al.. (2011). Anti-reflective nano- and micro-structures on 4H-SiC for photodiodes. Nanoscale Research Letters. 6(1). 236–236. 8 indexed citations
16.
Kurniawan, Tedi, Yew Hoong Wong, Kuan Yew Cheong, et al.. (2011). Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate. Materials Science in Semiconductor Processing. 14(1). 13–17. 29 indexed citations
17.
Lee, Seung Yong, et al.. (2006). Die Bonding Issues on Silicon Carbide Diodes. Materials science forum. 527-529. 875–878. 1 indexed citations
18.
19.
Bahng, Wook, et al.. (2004). Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring. Materials science forum. 457-460. 1013–1016. 3 indexed citations
20.
Bahng, Wook, et al.. (2002). Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer. Materials science forum. 389-393. 863–866. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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