J. Derrien

4.2k total citations
130 papers, 3.6k citations indexed

About

J. Derrien is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, J. Derrien has authored 130 papers receiving a total of 3.6k indexed citations (citations by other indexed papers that have themselves been cited), including 95 papers in Atomic and Molecular Physics, and Optics, 59 papers in Electrical and Electronic Engineering and 36 papers in Surfaces, Coatings and Films. Recurrent topics in J. Derrien's work include Semiconductor materials and interfaces (60 papers), Surface and Thin Film Phenomena (56 papers) and Semiconductor materials and devices (39 papers). J. Derrien is often cited by papers focused on Semiconductor materials and interfaces (60 papers), Surface and Thin Film Phenomena (56 papers) and Semiconductor materials and devices (39 papers). J. Derrien collaborates with scholars based in France, Italy and Germany. J. Derrien's co-authors include Joël Chevrier, V. Le Thanh, F. Salvan, Jean‐Claude Vial, A. Cros, M. De Crescenzi, Isabelle Berbézier, F. Arnaud d’Avitaya, R.C. Cinti and T.A. Nguyen Tan and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Derrien

126 papers receiving 3.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Derrien France 33 2.6k 1.8k 1.1k 848 684 130 3.6k
D. Bolmont France 30 2.2k 0.9× 1.6k 0.9× 1.1k 1.0× 433 0.5× 733 1.1× 200 3.3k
J. Nogami United States 37 3.4k 1.3× 1.2k 0.7× 815 0.7× 916 1.1× 753 1.1× 120 3.9k
H. H. Farrell United States 27 1.5k 0.6× 920 0.5× 880 0.8× 352 0.4× 592 0.9× 80 2.4k
G. Gewinner France 30 2.3k 0.9× 748 0.4× 836 0.8× 402 0.5× 499 0.7× 151 2.8k
J. A. Schaefer Germany 27 1.4k 0.5× 1.3k 0.7× 1.1k 1.0× 337 0.4× 526 0.8× 91 2.7k
J. C. Bean United States 27 2.5k 1.0× 3.1k 1.8× 1.5k 1.4× 555 0.7× 245 0.4× 67 4.0k
G.E. Rhead France 28 1.5k 0.6× 750 0.4× 1.1k 1.0× 403 0.5× 697 1.0× 61 2.7k
S. A. Flodström Sweden 31 1.8k 0.7× 947 0.5× 1.0k 0.9× 254 0.3× 1.1k 1.6× 81 2.8k
F. Greuter Switzerland 24 1.1k 0.4× 1.4k 0.8× 2.1k 1.9× 530 0.6× 211 0.3× 53 3.2k
H.‐J. Gossmann United States 37 2.3k 0.9× 3.7k 2.1× 1.3k 1.2× 381 0.4× 482 0.7× 127 4.8k

Countries citing papers authored by J. Derrien

Since Specialization
Citations

This map shows the geographic impact of J. Derrien's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Derrien with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Derrien more than expected).

Fields of papers citing papers by J. Derrien

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Derrien. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Derrien. The network helps show where J. Derrien may publish in the future.

Co-authorship network of co-authors of J. Derrien

This figure shows the co-authorship network connecting the top 25 collaborators of J. Derrien. A scholar is included among the top collaborators of J. Derrien based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Derrien. J. Derrien is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Olive‐Méndez, Sion F., A. Spiesser, Lisa Michez, et al.. (2008). Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection. Thin Solid Films. 517(1). 191–196. 62 indexed citations
2.
Thanh, V. Le, et al.. (2004). Kinetic formation and optical properties of self-assembled Ge/Si hut clusters. Materials Science in Semiconductor Processing. 8(1-3). 41–46.
3.
Paul, Douglas J., Gareth Redmond, B. O'Neill, et al.. (1998). Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques. Thin Solid Films. 336(1-2). 130–136. 13 indexed citations
4.
Berbézier, Isabelle, et al.. (1998). New insights on SiGe growth instabilities. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1582–1588. 21 indexed citations
5.
Berbézier, Isabelle, Bruno Gallas, A. Ronda, & J. Derrien. (1998). Dependence of SiGe growth instability on Si substrate orientation. Surface Science. 412-413. 415–429. 25 indexed citations
6.
Gallas, Bruno, Isabelle Berbézier, Joël Chevrier, & J. Derrien. (1996). Gallium-mediated homoepitaxial growth of silicon at low temperatures. Physical review. B, Condensed matter. 54(7). 4919–4925. 9 indexed citations
7.
Chevrier, Joël, et al.. (1994). Kinetic roughening during epitaxial growth of iron and silicon. 44. 227–236. 1 indexed citations
8.
Lagomarsino, S., Alexei Nikolaenko, F. Scarinci, et al.. (1989). Structural study of the CoSi2/Si(111) buried interface. Surface Science. 211-212. 692–697. 12 indexed citations
9.
Bałkanski, M., J. Derrien, G. Landwehr, et al.. (1987). Highlights of the 1987 E-MRS Meeting. MRS Bulletin. 12(3). 37–41. 1 indexed citations
10.
Lay, G. Le, J. Derrien, & Nino Boccara. (1987). Semiconductor interfaces : formation and properties : proceedings of the workshops, Les Houches, France, February 24-March 6, 1987. Springer eBooks. 1 indexed citations
11.
Pirri, C., J.C. Peruchetti, G. Gewinner, & J. Derrien. (1985). Early stages of epitaxial CoSi2 formation on Si(111) surface as investigated by ARUPS, XPS, LEED and work function variation. Surface Science. 152-153. 1106–1112. 17 indexed citations
12.
Pirri, C., J.C. Peruchetti, G. Gewinner, & J. Derrien. (1984). Nucleation of a two-dimensional compound during epitaxial growth ofCoSi2on Si(111). Physical review. B, Condensed matter. 30(10). 6227–6229. 31 indexed citations
13.
Pirri, C., J.C. Peruchetti, G. Gewinner, & J. Derrien. (1984). Cobalt disilicide epitaxial growth on the silicon (111) surface. Physical review. B, Condensed matter. 29(6). 3391–3397. 104 indexed citations
14.
Derrien, J., et al.. (1983). Formation and properties of the copper silicon(111) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(3). 546–552. 60 indexed citations
15.
Houzay, F., A. Cros, F. Salvan, et al.. (1983). Electronic properties of gold-silicon (111) 7 × 7 interfaces. Physica B+C. 117-118. 840–842. 3 indexed citations
16.
Derrien, J., et al.. (1982). Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study. Applied Physics A. 28(4). 247–250. 11 indexed citations
17.
Derrien, J., C. M. S. Cohen, A. Cros, et al.. (1981). Au on Si (111): A study of the interface under UHV conditions and its modifications in air by surface techniques and MeV ion scattering. Applied Physics Letters. 39(11). 915–917. 15 indexed citations
18.
Cros, A., F. Salvan, Mireille Commandré, & J. Derrien. (1981). Enhancement of the room temperature oxidation of silicon by very thin predeposited gold layers. Surface Science Letters. 103(1). L109–L114. 5 indexed citations
19.
Cros, A., et al.. (1980). ELECTRONIC SPECTRA OF THE AMORPHOUS AuSi INTERFACE. Le Journal de Physique Colloques. 41(C8). C8–795. 7 indexed citations
20.
Derrien, J., Bernard Goldstein, Alain Cros, & F. Salvan. (1978). Light-sensitive electron-loss measurements on clean and oxygen-adsorbed amorphous silicon. Applied Physics Letters. 33(10). 881–883. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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