D. V. Lang

14.2k total citations · 7 hit papers
121 papers, 11.3k citations indexed

About

D. V. Lang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. V. Lang has authored 121 papers receiving a total of 11.3k indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Electrical and Electronic Engineering, 51 papers in Atomic and Molecular Physics, and Optics and 30 papers in Materials Chemistry. Recurrent topics in D. V. Lang's work include Silicon and Solar Cell Technologies (40 papers), Semiconductor materials and devices (36 papers) and Semiconductor Quantum Structures and Devices (28 papers). D. V. Lang is often cited by papers focused on Silicon and Solar Cell Technologies (40 papers), Semiconductor materials and devices (36 papers) and Semiconductor Quantum Structures and Devices (28 papers). D. V. Lang collaborates with scholars based in United States, Austria and Germany. D. V. Lang's co-authors include R. A. Logan, C. H. Henry, Lionel C. Kimerling, J. David Cohen, M. Jaroš, A. M. Sergent, J. P. Harbison, G. L. Miller, J. C. Bean and C. H. Henry and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

D. V. Lang

120 papers receiving 10.4k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

1974 3.0k citations D. V. Lang Journal of Applied Physics profile →
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

1977 973 citations D. V. Lang et al. Physical review. B, Solid state profile →
Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

1979 712 citations D. V. Lang et al. profile →
Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

1977 556 citations D. V. Lang et al. Physical Review Letters profile →
Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions

1974 496 citations D. V. Lang Journal of Applied Physics profile →
Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

1982 376 citations D. V. Lang, J. David Cohen et al. profile →
Modulation doping in GexSi1−x/Si strained layer heterostructures

1984 242 citations R. People, J. C. Bean et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. V. Lang United States	39	9.5k	6.0k	3.2k	899	808	121	11.3k
T. C. McGill United States	49	7.1k 0.8×	7.3k 1.2×	3.1k 1.0×	1.3k 1.5×	741 0.9×	381	10.3k
Winfried Mönch Germany	45	5.3k 0.6×	4.8k 0.8×	2.6k 0.8×	1.1k 1.2×	980 1.2×	165	7.9k
J. P. Harbison United States	54	6.9k 0.7×	6.6k 1.1×	3.0k 0.9×	1.4k 1.5×	1.1k 1.3×	262	10.5k
H. Kroemer United States	58	8.0k 0.8×	8.5k 1.4×	2.4k 0.7×	1.4k 1.5×	1.2k 1.5×	272	11.0k
A. Madhukar United States	50	5.9k 0.6×	6.9k 1.1×	3.5k 1.1×	988 1.1×	1.3k 1.7×	257	9.0k
Yia‐Chung Chang United States	52	5.5k 0.6×	7.6k 1.3×	3.5k 1.1×	1.2k 1.3×	1.6k 2.0×	413	10.5k
A. A. Studna United States	24	4.3k 0.5×	4.1k 0.7×	2.2k 0.7×	616 0.7×	1.5k 1.9×	46	6.9k
H. Sakaki Japan	55	8.9k 0.9×	11.8k 2.0×	3.3k 1.0×	1.6k 1.8×	1.4k 1.7×	398	13.5k
Raphael Tsu United States	41	7.5k 0.8×	6.6k 1.1×	4.6k 1.4×	655 0.7×	1.4k 1.8×	166	11.1k
H. C. Casey United States	36	5.2k 0.5×	4.8k 0.8×	1.5k 0.5×	1.4k 1.6×	717 0.9×	88	6.8k

Countries citing papers authored by D. V. Lang

Since Specialization

Citations

This map shows the geographic impact of D. V. Lang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. V. Lang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. V. Lang more than expected).

Fields of papers citing papers by D. V. Lang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. V. Lang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. V. Lang. The network helps show where D. V. Lang may publish in the future.

Co-authorship network of co-authors of D. V. Lang

This figure shows the co-authorship network connecting the top 25 collaborators of D. V. Lang. A scholar is included among the top collaborators of D. V. Lang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. V. Lang. D. V. Lang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lang, D. V.. (2019). Strategic Omission and Risk Aversion: A Bias-Reliability Tradeoff.. Grantee Submission. 1 indexed citations

Lang, D. V., Lukas Karge, Ralph Gilles, et al.. (2016). Evolution of strain-induced hafnium carbides in a molybdenum base Mo–Hf–C alloy studied by small-angle neutron scattering and complementary methods. Journal of Alloys and Compounds. 688. 619–631. 10 indexed citations

Lang, D. V., et al.. (2015). Evolution of strain-induced precipitates in a molybdenum-base Mo-Hf-C alloy. 51(4). 08-1–08-7. 2 indexed citations

Lang, D. V. & Kevin J. Lansing. (2010). Forecasting growth over the next year with a business cycle index. FRB SF weekly letter. 3 indexed citations

Fleming, R. M., C. H. Seager, D. V. Lang, & John M. Campbell. (2010). Annealing neutron damaged silicon bipolar transistors: Relating gain degradation to specific lattice defects. Journal of Applied Physics. 108(6). 17 indexed citations

Mitrofanov, Oleg, et al.. (2007). Defects in Organic Molecular Crystals: Spectroscopy and Effects on Electronic and Optical Properties. 96. 240–242. 3 indexed citations

Mitrofanov, Oleg, et al.. (2006). Oxygen-Related Band Gap State in Single Crystal Rubrene. Physical Review Letters. 97(16). 166601–166601. 102 indexed citations

Cavicchi, Richard E., D. V. Lang, D. Gershoni, et al.. (1989). Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP. Applied Physics Letters. 54(8). 739–741. 72 indexed citations

Sauer, R., M. T. Asom, R. People, et al.. (1987). New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu. Applied Physics Letters. 51(15). 1185–1187. 3 indexed citations

10.

Chand, Navin, R. Fischer, A. M. Sergent, D. V. Lang, & A. Y. Cho. (1987). Electrical Characterization of Defects in GaAs Grown on Si by MBE. MRS Proceedings. 91. 3 indexed citations

11.

Temkin, H., J. C. Bean, T. P. Pearsall, N.A. Olsson, & D. V. Lang. (1986). High photoconductive gain in GexSi1−x/Si strained-layer superlattice detectors operating at λ=1.3 μm. Applied Physics Letters. 49(3). 155–157. 27 indexed citations

12.

Harbison, J. P., et al.. (1984). A DLTS study of the effects of boron counterdoping on the gap states in n-type hydrogenated amorphous silicon. Solid State Communications. 50(11). 991–994. 3 indexed citations

13.

Lang, D. V.. (1982). Recombination-Enhanced Reactions in Semiconductors. Annual Review of Materials Science. 12(1). 377–398. 55 indexed citations

14.

Cohen, J. David, D. V. Lang, J. C. Bean, & J. P. Harbison. (1980). A DLTS study of the gap states of amorphous Si1−H alloys. Journal of Non-Crystalline Solids. 35-36. 581–586. 17 indexed citations

15.

Casey, H. C., A. Y. Cho, D. V. Lang, E. H. Nicollian, & P. W. Foy. (1979). Investigation of heterojunctions for MIS devices with oxygen-doped AlxGa1−xAs on n-type GaAs. Journal of Applied Physics. 50(5). 3484–3491. 45 indexed citations

16.

Petroff, P. M., et al.. (1978). New STEM spectroscopic techniques for simultaneous electronic analysis and observation of defects in semiconductor materials and devices. Proceedings annual meeting Electron Microscopy Society of America. 36(1). 130–131. 3 indexed citations

17.

Lang, D. V. & Lionel C. Kimerling. (1976). Observation of athermal defect annealing in GaP. Applied Physics Letters. 28(5). 248–250. 101 indexed citations

18.

Lang, D. V., Lionel C. Kimerling, & Suet Yi Leung. (1976). Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAs. Journal of Applied Physics. 47(8). 3587–3591. 109 indexed citations

19.

Lang, D. V. & L. C. Kimerling. (1974). A new technique for defect spectroscopy in semiconductors: application to 1- MeV electron irradiated n-GaAs. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 7 indexed citations

20.

Moran, P. R. & D. V. Lang. (1970). Spin-Diffusion Limitations for High-Sensitivity NMR Techniques. Physical review. B, Solid state. 2(7). 2360–2368. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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