Injun Hwang

882 total citations
36 papers, 715 citations indexed

About

Injun Hwang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Injun Hwang has authored 36 papers receiving a total of 715 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 16 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Injun Hwang's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (10 papers) and Magnetic properties of thin films (9 papers). Injun Hwang is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (10 papers) and Magnetic properties of thin films (9 papers). Injun Hwang collaborates with scholars based in South Korea, United States and Taiwan. Injun Hwang's co-authors include Jongseob Kim, Jaejoon Oh, U‐In Chung, Hyuk Choi, Hyoji Choi, Jaikwang Shin, Jong‐Bong Ha, Jong-Bong Park, Jae Cheol Lee and Jaewon Lee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Fuel.

In The Last Decade

Injun Hwang

35 papers receiving 694 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Injun Hwang South Korea 13 515 500 294 122 111 36 715
Jingcun Liu United States 19 1.0k 2.0× 688 1.4× 336 1.1× 98 0.8× 197 1.8× 37 1.3k
Sangwoo Han South Korea 14 525 1.0× 251 0.5× 132 0.4× 73 0.6× 43 0.4× 66 584
Jung Hyun Oh South Korea 12 263 0.5× 127 0.3× 189 0.6× 519 4.3× 237 2.1× 37 718
M. Miller United States 13 528 1.0× 69 0.1× 126 0.4× 105 0.9× 65 0.6× 42 656
Matteo Franchin United Kingdom 13 179 0.3× 223 0.4× 314 1.1× 610 5.0× 135 1.2× 27 713
Yang Lu China 14 398 0.8× 415 0.8× 169 0.6× 121 1.0× 86 0.8× 65 530
Sandeepan DasGupta United States 17 880 1.7× 260 0.5× 108 0.4× 81 0.7× 90 0.8× 55 979
A. Wallash United States 14 573 1.1× 106 0.2× 101 0.3× 166 1.4× 79 0.7× 61 779
Shintaro Shinjo Japan 16 887 1.7× 278 0.6× 25 0.1× 53 0.4× 46 0.4× 106 926
Penglei Li United Kingdom 13 140 0.3× 159 0.3× 246 0.8× 89 0.7× 174 1.6× 19 539

Countries citing papers authored by Injun Hwang

Since Specialization
Citations

This map shows the geographic impact of Injun Hwang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Injun Hwang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Injun Hwang more than expected).

Fields of papers citing papers by Injun Hwang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Injun Hwang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Injun Hwang. The network helps show where Injun Hwang may publish in the future.

Co-authorship network of co-authors of Injun Hwang

This figure shows the co-authorship network connecting the top 25 collaborators of Injun Hwang. A scholar is included among the top collaborators of Injun Hwang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Injun Hwang. Injun Hwang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Hwang, Injun & Yongsug Chung. (2023). Physical and Chemical Wetting Behavior Between MgO-C and Liquid Slag With Varying Slag Composition. Metallurgical and Materials Transactions B. 54(6). 2881–2888. 3 indexed citations
3.
Lee, Dongjun, Yongmin Cho, Jun Hyun Kim, et al.. (2023). Application of k-Means Clustering to Material Research: Measurement of Layer Thickness and Contact Angle. Metals and Materials International. 29(9). 2636–2647. 6 indexed citations
4.
Hwang, Injun, et al.. (2022). Extraction of Dynamic Threshold Voltage in Resistive Load Hard Switching Operation of Schottky-Type p-GaN Gate HEMT. IEEE Electron Device Letters. 43(10). 1720–1723. 17 indexed citations
5.
Park, Jun Hyuk, et al.. (2022). N2O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs. Applied Physics Letters. 120(13). 4 indexed citations
6.
Hwang, Injun, Soogine Chong, Jaejoon Oh, et al.. (2021). Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement. IEEE Electron Device Letters. 42(8). 1208–1211. 12 indexed citations
7.
Hwang, Injun, Soogine Chong, Jaejoon Oh, et al.. (2021). Transient Measurement of GaN HEMT Drift Region Potential in the High Power State. IEEE Electron Device Letters. 42(4). 557–560. 7 indexed citations
8.
Hong, Ki‐Ha, Hyuk Choi, Injun Hwang, & Jongseob Kim. (2014). Effects of oxygen plasma treatment on V th uniformity of recessed-gate AlGaN/GaN HEMTs. Electronic Materials Letters. 10(2). 363–367. 7 indexed citations
9.
Kim, Kwang‐Seok, et al.. (2014). Crystallization characteristics of a middle CoFeB layer in a double MgO barrier magnetic tunnel junction. Current Applied Physics. 15(1). 38–41. 1 indexed citations
10.
Kim, Jongseob, Injun Hwang, Hyoji Choi, et al.. (2013). High threshold voltage p-GaN gate power devices on 200 mm Si. 315–318. 18 indexed citations
11.
Hwang, Injun, Jaejoon Oh, Hyuk Choi, et al.. (2013). Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage. IEEE Electron Device Letters. 34(5). 605–607. 46 indexed citations
12.
Hwang, Injun, Jongseob Kim, Soogine Chong, et al.. (2013). Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs. IEEE Electron Device Letters. 34(12). 1494–1496. 94 indexed citations
13.
Bae, Jong‐Ho, Injun Hwang, Jongmin Shin, et al.. (2012). Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT. 13.2.1–13.2.4. 20 indexed citations
14.
Hwang, Injun, Cheolwoo You, Y. Kim, & Vahid Tarokh. (2009). Downlink transmission rate-control strategies for closed-loop multiple-input multiple-output systems. IET Communications. 3(4). 620–629. 3 indexed citations
15.
Kim, Tae‐Wan, et al.. (2006). Technological issues for high-density MRAM. 182–182. 1 indexed citations
16.
17.
You, Y.-H., et al.. (2004). Improvement of AMC-MIMO Multiplexing Systems with Selection Transmit Diversity Techniques. IEICE Transactions on Communications. 87(6). 1684–1687. 1 indexed citations
18.
Koh, G.H., Hyojung Kim, Won-Cheol Jeong, et al.. (2004). Fabrication of high performance 64kb MRAM. Journal of Magnetism and Magnetic Materials. 272-276. 1941–1942. 7 indexed citations
19.
Hwang, Injun, et al.. (2002). Magnetic field dependent noise in magnetic tunnel junction. Journal of Applied Physics. 91(10). 8804–8806. 8 indexed citations
20.
Hwang, Injun, et al.. (2001). Test selection for a nondeterministic FSM. Computer Communications. 24(12). 1213–1223. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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