Hyunjun Sim

794 total citations
23 papers, 681 citations indexed

About

Hyunjun Sim is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hyunjun Sim has authored 23 papers receiving a total of 681 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hyunjun Sim's work include Semiconductor materials and devices (13 papers), Advanced Memory and Neural Computing (11 papers) and Electronic and Structural Properties of Oxides (11 papers). Hyunjun Sim is often cited by papers focused on Semiconductor materials and devices (13 papers), Advanced Memory and Neural Computing (11 papers) and Electronic and Structural Properties of Oxides (11 papers). Hyunjun Sim collaborates with scholars based in South Korea and United States. Hyunjun Sim's co-authors include Hyunsang Hwang, C. B. Samantaray, Dooho Choi, Dongsoo Lee, Hyunsang Hwang, Hyesun Hwang, Man Chang, In-Kyeong Yoo, Myoung‐Jae Lee and Sunae Seo and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Thin Solid Films.

In The Last Decade

Hyunjun Sim

23 papers receiving 667 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hyunjun Sim South Korea 12 559 380 163 141 53 23 681
Wang Xiang China 9 349 0.6× 285 0.8× 93 0.6× 113 0.8× 23 0.4× 23 463
Erwin Hildebrandt Germany 13 525 0.9× 286 0.8× 93 0.6× 108 0.8× 139 2.6× 23 744
Hongjia Song China 16 475 0.8× 343 0.9× 99 0.6× 145 1.0× 29 0.5× 78 636
Seung Wook Ryu South Korea 15 502 0.9× 373 1.0× 123 0.8× 87 0.6× 44 0.8× 25 567
Seong-Geon Park United States 8 442 0.8× 313 0.8× 121 0.7× 33 0.2× 63 1.2× 15 553
Y. X. Liu China 5 243 0.4× 348 0.9× 83 0.5× 185 1.3× 28 0.5× 7 465
X. Chen United States 9 543 1.0× 459 1.2× 171 1.0× 240 1.7× 86 1.6× 18 747
Nobuyoshi Awaya Japan 12 608 1.1× 243 0.6× 153 0.9× 227 1.6× 67 1.3× 22 679
Dun‐Bao Ruan Taiwan 16 627 1.1× 218 0.6× 233 1.4× 57 0.4× 38 0.7× 51 673
V. Sousa France 14 475 0.8× 441 1.2× 116 0.7× 63 0.4× 66 1.2× 36 566

Countries citing papers authored by Hyunjun Sim

Since Specialization
Citations

This map shows the geographic impact of Hyunjun Sim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hyunjun Sim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hyunjun Sim more than expected).

Fields of papers citing papers by Hyunjun Sim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hyunjun Sim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hyunjun Sim. The network helps show where Hyunjun Sim may publish in the future.

Co-authorship network of co-authors of Hyunjun Sim

This figure shows the co-authorship network connecting the top 25 collaborators of Hyunjun Sim. A scholar is included among the top collaborators of Hyunjun Sim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hyunjun Sim. Hyunjun Sim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Jeonghoon, et al.. (2015). Bio-Retentions Design Practice for Suspended Solids Management at Industrial Areas. Korean Society of Hazard Mitigation. 15(5). 267–273. 4 indexed citations
2.
Jo, Younghun, et al.. (2009). Reverse resistance switching in polycrystalline Nb2O5 films. Thin Solid Films. 518(20). 5676–5678. 8 indexed citations
3.
Baek, In-Gyu, Jinshi Zhao, Hyunjun Sim, et al.. (2006). Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications. Symposium on VLSI Technology. 26–27. 34 indexed citations
4.
Sim, Hyunjun, Hyejung Choi, Dongsoo Lee, et al.. (2006). Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application. 85. 758–761. 36 indexed citations
5.
6.
Choi, Dooho, Dongsoo Lee, Hyunjun Sim, Man Chang, & Hyunsang Hwang. (2006). Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications. Applied Physics Letters. 88(8). 114 indexed citations
7.
Lee, Tae‐Ho, et al.. (2006). Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability. Japanese Journal of Applied Physics. 45(9R). 6993–6993. 4 indexed citations
8.
Samantaray, C. B., Hyunjun Sim, & Hyesun Hwang. (2005). First-principles study of electronic structure and optical properties of barium strontium titanates (Ba x Sr 1−x TiO 3 ). Applied Surface Science. 250(1-4). 146–151. 26 indexed citations
9.
Samantaray, C. B., Hyunjun Sim, & Hyunsang Hwang. (2005). The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations. Microelectronics Journal. 36(8). 725–728. 74 indexed citations
10.
Sim, Hyunjun, et al.. (2005). Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5. Microelectronic Engineering. 80. 260–263. 24 indexed citations
11.
Samantaray, C. B., Hyunjun Sim, & Hyunsang Hwang. (2004). Electronic structures of high-k transition metal silicates: first-principles calculations. Microelectronics Journal. 35(8). 655–658. 5 indexed citations
12.
Sim, Hyunjun, et al.. (2004). Electrical and Structural Characteristics of High-kGate Dielectrics with Epitaxial Si3N4Interfacial Layer on Si(111). Japanese Journal of Applied Physics. 43(12). 7926–7928. 3 indexed citations
13.
Sim, Hyunjun, et al.. (2004). The HfSi[sub x]O[sub y] Interfacial Layer Effect on Improving Electrical Characteristics of Ultrathin High-κ TiO[sub 2] Gate Dielectric. Electrochemical and Solid-State Letters. 8(1). F5–F5. 3 indexed citations
14.
Samantaray, C. B., Hyunjun Sim, & Hyunsang Hwang. (2004). Electronic structures of transitional metal aluminates as high-k gate dielectrics: first principles study. Applied Surface Science. 239(1). 101–108. 3 indexed citations
15.
Samantaray, C. B., Hyunjun Sim, & Hyesun Hwang. (2004). Electronic structure and optical properties of barium strontium titanate (BaxSr1−xTiO3) using first-principles method. Physica B Condensed Matter. 351(1-2). 158–162. 59 indexed citations
16.
Sim, Hyunjun, et al.. (2003). Electrical Characteristics of Ozone-Oxidized HfO2Gate Dielectrics. Japanese Journal of Applied Physics. 42(Part 1, No. 4A). 1596–1597. 6 indexed citations
17.
Sim, Hyunjun & Hyunsang Hwang. (2002). Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics. Applied Physics Letters. 81(21). 4038–4039. 19 indexed citations
18.
19.
Sim, Hyunjun, Sanghun Jeon, & Hyunsang Hwang. (2001). Electrical Characteristics of TiO2/ZrSixOy Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications. Japanese Journal of Applied Physics. 40(12R). 6803–6803. 3 indexed citations
20.
Jung, Hyung‐Suk, et al.. (2001). Electrical and Reliability Characteristics of an Ultrathin TaOxNy Gate Dielectric Prepared by O3 Annealing. Japanese Journal of Applied Physics. 40(4R). 2221–2221. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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