Daehwan Jung

4.0k total citations
117 papers, 2.9k citations indexed

About

Daehwan Jung is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Daehwan Jung has authored 117 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Electrical and Electronic Engineering, 97 papers in Atomic and Molecular Physics, and Optics and 20 papers in Biomedical Engineering. Recurrent topics in Daehwan Jung's work include Semiconductor Quantum Structures and Devices (85 papers), Photonic and Optical Devices (66 papers) and Semiconductor Lasers and Optical Devices (55 papers). Daehwan Jung is often cited by papers focused on Semiconductor Quantum Structures and Devices (85 papers), Photonic and Optical Devices (66 papers) and Semiconductor Lasers and Optical Devices (55 papers). Daehwan Jung collaborates with scholars based in United States, South Korea and Hong Kong. Daehwan Jung's co-authors include John E. Bowers, Justin Norman, A. C. Gossard, Yating Wan, Minjoo Larry Lee, Zeyu Zhang, Chen Shang, Robert W. Herrick, Seth R. Bank and Songtao Liu and has published in prestigious journals such as Nature, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

Daehwan Jung

110 papers receiving 2.7k citations

Peers

Daehwan Jung

EEE

AMPO

Mingchu Tang United Kingdom

Shui-Qing Yu United States

M. Myronov United Kingdom

Nobuya Mori Japan

Peter M. Smowton United Kingdom

Yoshiki Sakuma Japan

P. Frigeri Italy

B. Sermage France

Baile Chen China

J. P. Prineas United States

Mingchu Tang United Kingdom

Daehwan Jung

2.6k ×1.0

EEE

2.2k ×1.1

AMPO

576 ×1.2

578 ×1.5

169 ×0.9

Citations per year, relative to Daehwan Jung Daehwan Jung (= 1×) peers Mingchu Tang

Countries citing papers authored by Daehwan Jung

Since Specialization

Citations

This map shows the geographic impact of Daehwan Jung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daehwan Jung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daehwan Jung more than expected).

Fields of papers citing papers by Daehwan Jung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daehwan Jung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daehwan Jung. The network helps show where Daehwan Jung may publish in the future.

Co-authorship network of co-authors of Daehwan Jung

This figure shows the co-authorship network connecting the top 25 collaborators of Daehwan Jung. A scholar is included among the top collaborators of Daehwan Jung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daehwan Jung. Daehwan Jung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hong, Sukwon, et al.. (2025). Growth of InxGa1-xSb linearly graded buffers on GaSb substrate for ultra-low bandgap 0.1 eV InAsSb layer. Applied Surface Science. 698. 163056–163056.

Ahn, Dae‐Hwan, et al.. (2024). Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate. ACS Applied Materials & Interfaces. 16(23). 30209–30217. 2 indexed citations

Hughes, Eamonn T., Chen Shang, Jennifer Selvidge, et al.. (2024). Gradual degradation in InAs quantum dot lasers on Si and GaAs. Nanoscale. 16(6). 2966–2973. 1 indexed citations

Kim, Yeon‐Hwa, et al.. (2024). 1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells. ACS Applied Optical Materials. 2(4). 624–631. 1 indexed citations

Kim, Younghyun, Inho Kim, Tae Soo Kim, et al.. (2024). Improving the Open-Circuit Voltage of III–V Layer-Filtered Si Subcells for Monolithic III–V/Si Tandem Solar Cells. ACS Applied Energy Materials. 7(13). 5501–5507. 3 indexed citations

Kyhm, Jihoon, et al.. (2023). Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications. Applied Surface Science. 623. 156899–156899. 6 indexed citations

Ahn, Dae‐Hwan, et al.. (2023). Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth. Optics Express. 32(2). 1334–1334. 2 indexed citations

Jang, Ho Won, et al.. (2023). Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes. ACS Applied Materials & Interfaces. 15(48). 55965–55974. 5 indexed citations

Kim, Yeon‐Hwa, Tae Soo Kim, Dae‐Hwan Ahn, et al.. (2023). GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer. Energies. 16(3). 1158–1158. 7 indexed citations

10.

Choi, Won Jun, et al.. (2023). Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants. AIP Advances. 13(4). 2 indexed citations

11.

Kim, Yeon‐Hwa, et al.. (2022). Flexible p-i-n InAs thin-film photodetector with low dark current enabled by an InAlAs barrier. Optical Materials Express. 12(6). 2374–2374. 8 indexed citations

12.

Huang, Heming, Jianan Duan, Bozhang Dong, et al.. (2020). Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback. APL Photonics. 5(1). 37 indexed citations

13.

Buffolo, Matteo, Carlo De Santi, Daehwan Jung, et al.. (2020). Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers. IEEE Journal of Quantum Electronics. 57(1). 1–8. 15 indexed citations

14.

Mukherjee, Kunal, Jennifer Selvidge, Daehwan Jung, et al.. (2020). Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon. Journal of Applied Physics. 128(2). 14 indexed citations

15.

Kang, Soo Seok, et al.. (2020). Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si. Applied Physics Letters. 117(26). 11 indexed citations

16.

Duan, Jianan, Heming Huang, Bozhang Dong, et al.. (2019). 1.3-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math> </inline-formula>m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon. IEEE Photonics Technology Letters. 31(5). 345–348. 80 indexed citations

17.

Chen, Chen, Feng Chen, Xiaolong Chen, et al.. (2019). Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus. Nano Letters. 19(3). 1488–1493. 100 indexed citations

18.

Liu, Songtao, Xinru Wu, Justin Norman, et al.. (2019). 100 GHz colliding pulse mode locked quantum dot lasers directly grown on Si for WDM application. Conference on Lasers and Electro-Optics. 1 indexed citations

19.

Buffolo, Matteo, Carlo De Santi, Daehwan Jung, et al.. (2019). Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers. IEEE Journal of Quantum Electronics. 55(3). 1–7. 16 indexed citations

20.

Jung, Daehwan, Joseph Faucher, Samik Mukherjee, et al.. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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