Haldun Küflüoğlu

1.8k citations

23 papers · 1.4k indexed · h-index 15

Co-authors: Muhammad A. Alam Kaushik Roy Kunhyuk Kang Dhanoop Varghese Souvik Mahapatra Md Ashraful Alam Bipul C. Paul Ahmad E. Islam
Topics: Semiconductor materials and devices (22 papers)Advancements in Semiconductor Devices and Circuit Design (21 papers)Integrated Circuits and Semiconductor Failure Analysis (11 papers)
Cited by: Electrical and Electronic Engineering Hardware and Architecture Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: United States India Japan

In The Last Decade

Haldun Küflüoğlu

22 papers receiving 1.3k citations

Peers

Countries citing papers authored by Haldun Küflüoğlu

Since Specialization

Citations

This map shows the geographic impact of Haldun Küflüoğlu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Haldun Küflüoğlu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Haldun Küflüoğlu more than expected).

Fields of papers citing papers by Haldun Küflüoğlu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Haldun Küflüoğlu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Haldun Küflüoğlu. The network helps show where Haldun Küflüoğlu may publish in the future.

Co-authorship network of co-authors of Haldun Küflüoğlu

This figure shows the co-authorship network connecting the top 25 collaborators of Haldun Küflüoğlu. A scholar is included among the top collaborators of Haldun Küflüoğlu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Haldun Küflüoğlu. Haldun Küflüoğlu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Thermally-aware sensor allocation for real-time monitoring and mitigation of FEOL aging in System-on-Chip (SoC) applications 2017 ·Haldun Küflüoğlu,Min Chen,Shan Lu,(unknown),(unknown),(unknown)	3
2	Modeling Interface-defect Generation (MIG) 2014 ·Ahmad E. Islam,Haldun Küflüoğlu,Muhammad A. Alam	1
3	Recovery modeling of negative bias temperature instability (NBTI) for SPICE-compatible circuit aging simulators 2014 ·ACM Journal on Emerging Technologies in Computing Systems ·Haldun Küflüoğlu,(unknown),Min Chen,C.R. Cirba,Vijay Reddy	0
4	Aging sensors for workload centric guardbanding in dynamic voltage scaling applications 2013 ·Min Chen,Haldun Küflüoğlu,John M. Carulli,V. Reddy	14
5	An extensive and improved circuit simulation methodology for NBTI recovery 2010 ·Haldun Küflüoğlu,V. Reddy,Andrew Marshall,Jessica Krick,Tamer Ragheb,C.R. Cirba,A.T. Krishnan,(unknown)	13
6	MOSFET degradation due to negative bias temperature instability (NBTI) and hot carrier injection (HCI), and its implications for reliability-aware VLSI design 2007 ·Purdue e-Pubs (Purdue University System) ·Haldun Küflüoğlu	19
7	History Dependent Recovery of NBTI under Alternating DC and AC Stress 2007 ·Haldun Küflüoğlu,C. Prasad,M. Agostinelli	2
8	Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis 2007 ·IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ·Kunhyuk Kang,Haldun Küflüoğlu,Kaushik Roy,Md Ashraful Alam	132
9	Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation 2007 ·IEEE Transactions on Electron Devices ·Ahmad E. Islam,Haldun Küflüoğlu,Dhanoop Varghese,Souvik Mahapatra,Md Ashraful Alam	213
10	Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements 2007 ·Applied Physics Letters ·Ahmad E. Islam,Haldun Küflüoğlu,Dhanoop Varghese,Muhammad A. Alam	27
11	Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown 2007 ·Dhanoop Varghese,Haldun Küflüoğlu,V. Reddy,(unknown),(unknown),S. Krishnan,Muhammad A. Alam	7
12	Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits 2007 ·IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ·Bipul C. Paul,Kunhyuk Kang,Haldun Küflüoğlu,Muhammad A. Alam,Kaushik Roy	61
13	off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown 2007 ·IEEE Transactions on Electron Devices ·Dhanoop Varghese,Haldun Küflüoğlu,V. Reddy,H. Shichijo,(unknown),S. Krishnan,Md Ashraful Alam	60
14	Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs 2006 ·IEEE Transactions on Electron Devices ·Haldun Küflüoğlu,Muhammad A. Alam	71
15	A comprehensive model for PMOS NBTI degradation: Recent progress 2006 ·Microelectronics Reliability ·Muhammad A. Alam,Haldun Küflüoğlu,Dhanoop Varghese,Souvik Mahapatra	216
16	Universality of Off-State Degradation in Drain Extended NMOS Transistors 2006 ·Dhanoop Varghese,Haldun Küflüoğlu,V. Reddy,H. Shichijo,S. Krishnan,Muhammad A. Alam	18
17	Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI 2006 ·Kunhyuk Kang,Haldun Küflüoğlu,Muhammad A. Alam,Kaushik Roy	52
18	A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs 2005 ·Haldun Küflüoğlu,Muhammad A. Alam	78
19	On reliable circuits and systems: how reliability considerations are reshaping oxide scaling, device geometry, and VLSI algorithm 2005 ·(unknown),Haldun Küflüoğlu,Bipul C. Paul,(unknown),Kaushik Roy	2
20	A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability 2004 ·Journal of Computational Electronics ·Haldun Küflüoğlu,Muhammad A. Alam	37

About Haldun Küflüoğlu

Haldun Küflüoğlu is a scholar working on Electrical and Electronic Engineering, Industrial and Manufacturing Engineering and Atomic and Molecular Physics, and Optics, having authored 23 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.4k citations), Hardware and Architecture (123 citations) and Atomic and Molecular Physics, and Optics (52 citations). Haldun Küflüoğlu has collaborated with scholars based in United States, India and Japan. Frequent co-authors include Muhammad A. Alam, Kaushik Roy, Kunhyuk Kang, Dhanoop Varghese, Souvik Mahapatra, Md Ashraful Alam, Bipul C. Paul, Ahmad E. Islam, V. Reddy and S. Krishnan. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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