Yaqing Chi

642 total citations
90 papers, 459 citations indexed

About

Yaqing Chi is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yaqing Chi has authored 90 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Electrical and Electronic Engineering, 27 papers in Hardware and Architecture and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yaqing Chi's work include Radiation Effects in Electronics (55 papers), Semiconductor materials and devices (31 papers) and Advancements in Semiconductor Devices and Circuit Design (28 papers). Yaqing Chi is often cited by papers focused on Radiation Effects in Electronics (55 papers), Semiconductor materials and devices (31 papers) and Advancements in Semiconductor Devices and Circuit Design (28 papers). Yaqing Chi collaborates with scholars based in China and Netherlands. Yaqing Chi's co-authors include Bin Liang, Jianjun Chen, Shuming Chen, Liang Fang, Pengcheng Huang, Biwei Liu, Rulin Liu, Xun Yi, Yang Guo and Jianjun Chen and has published in prestigious journals such as Applied Physics Letters, IEEE Access and IEEE Transactions on Electron Devices.

In The Last Decade

Yaqing Chi

75 papers receiving 427 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yaqing Chi China 11 407 168 65 28 24 90 459
D. Mateo Spain 14 499 1.2× 97 0.6× 90 1.4× 24 0.9× 96 4.0× 80 615
Campbell Millar United Kingdom 14 567 1.4× 75 0.4× 33 0.5× 26 0.9× 53 2.2× 44 600
Haldun Küflüoğlu United States 15 1.4k 3.3× 123 0.7× 43 0.7× 52 1.9× 17 0.7× 23 1.4k
Edward J. Nowak United States 7 372 0.9× 62 0.4× 69 1.1× 35 1.3× 76 3.2× 14 406
C. Machala United States 11 646 1.6× 61 0.4× 72 1.1× 102 3.6× 77 3.2× 28 707
V. Reddy United States 17 1.6k 3.9× 169 1.0× 44 0.7× 75 2.7× 15 0.6× 34 1.6k
John Safran United States 9 327 0.8× 92 0.5× 17 0.3× 25 0.9× 47 2.0× 19 343
Dhanoop Varghese United States 17 1.3k 3.3× 71 0.4× 171 2.6× 69 2.5× 38 1.6× 52 1.4k
Masayuki Terai Japan 12 457 1.1× 102 0.6× 51 0.8× 19 0.7× 6 0.3× 58 469
G. Bronner United States 9 345 0.8× 84 0.5× 45 0.7× 36 1.3× 22 0.9× 33 395

Countries citing papers authored by Yaqing Chi

Since Specialization
Citations

This map shows the geographic impact of Yaqing Chi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yaqing Chi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yaqing Chi more than expected).

Fields of papers citing papers by Yaqing Chi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yaqing Chi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yaqing Chi. The network helps show where Yaqing Chi may publish in the future.

Co-authorship network of co-authors of Yaqing Chi

This figure shows the co-authorship network connecting the top 25 collaborators of Yaqing Chi. A scholar is included among the top collaborators of Yaqing Chi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yaqing Chi. Yaqing Chi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cui, Jiangwei, Qiwen Zheng, Yaqing Chi, et al.. (2025). Interaction of Total Ionizing Dose Effect and Hot Carrier Degradation in Bulk I/O-FinFETs. IEEE Transactions on Electron Devices. 72(9). 4662–4668.
2.
Chi, Yaqing, Yang Guo, Ming Tao, et al.. (2024). Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM. Applied Physics Letters. 125(2). 1 indexed citations
3.
Luo, Deng, et al.. (2024). Single-Event Effect Characterization of 16 GHz Phase-Locked Loop in Sub-20 nm FinFET Technology. IEEE Transactions on Nuclear Science. 71(9). 2077–2085.
4.
Wang, Dongsheng, et al.. (2024). Soft Error Tolerant Bandgap Reference Utilizing Single-Event Transient Filtering Technique. IEEE Transactions on Nuclear Science. 71(4). 895–901.
5.
Chi, Yaqing, et al.. (2024). Radiation Effects of Advanced Electronic Devices and Circuits. Electronics. 13(6). 1073–1073.
6.
Chi, Yaqing, et al.. (2023). The carrier transport properties of zigzag carbon nanotubes with intrinsic defects: An investigation from first principles. Diamond and Related Materials. 135. 109801–109801.
7.
Chi, Yaqing, et al.. (2023). Machine Learning-Based Soft-Error-Rate Evaluation for Large-Scale Integrated Circuits. Electronics. 12(24). 4978–4978. 1 indexed citations
8.
Chen, Jianjun, et al.. (2023). Research on Single Event Transients in Linear Voltage Regulators in a 28 nm Bulk CMOS Technology. IEEE Transactions on Nuclear Science. 71(4). 793–801. 1 indexed citations
9.
Guo, Yang, Bin Liang, Ming Tao, et al.. (2023). Higher NMOS Single Event Transient Susceptibility Compared to PMOS in Sub-20nm Bulk FinFET. IEEE Electron Device Letters. 44(10). 1712–1715. 3 indexed citations
10.
Chen, Jianjun, et al.. (2022). ASET and TID Characterization of a Radiation Hardened Bandgap Voltage Reference in a 28-nm Bulk CMOS Technology. IEEE Transactions on Nuclear Science. 69(5). 1141–1147. 6 indexed citations
11.
Liang, Bin, et al.. (2022). A SET-Tolerant High-Frequency Multibiased Multiphase Voltage-Controlled Oscillator for Phase Interpolator-Based Clock and Data Recovery. IEEE Transactions on Nuclear Science. 69(7). 1725–1732. 5 indexed citations
12.
Chi, Yaqing, et al.. (2022). TAISAM: A Transistor Array-Based Test Method for Characterizing Heavy Ion-Induced Sensitive Areas in Semiconductor Materials. Electronics. 11(13). 2043–2043. 2 indexed citations
13.
Huang, Pengcheng, et al.. (2022). Characterization of charge sharing induced by high LET heavy ions using inverter chains in a commercial bulk FinFET process. Semiconductor Science and Technology. 37(8). 85005–85005. 1 indexed citations
14.
Liang, Bin, et al.. (2021). A Body-Biasing Technique for Single-Event Transient Mitigation in 28-nm Bulk CMOS Process. IEEE Transactions on Nuclear Science. 68(12). 2717–2723. 3 indexed citations
15.
Huang, Pengcheng, Zhenyu Wu, Yaqing Chi, et al.. (2021). Effect of Cell Placement on Single-Event Transient Pulse in a Bulk FinFET Technology. IEEE Transactions on Nuclear Science. 68(5). 1103–1110. 2 indexed citations
16.
Chi, Yaqing, Pengcheng Huang, Qian Sun, Bin Liang, & Zhenyu Zhao. (2021). Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs. IEEE Transactions on Nuclear Science. 69(5). 1176–1181. 8 indexed citations
17.
Chen, Jianjun, et al.. (2019). An SEU/SET-Tolerant Phase Frequency Detector With Double-Loop Self-Sampling Technology for Clock Data Recovery. IEEE Transactions on Nuclear Science. 66(7). 1483–1490. 4 indexed citations
18.
Chen, Shuming, Yaqing Chi, Zhenyu Wu, et al.. (2017). Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors. Applied Physics Letters. 110(23). 8 indexed citations
19.
Chen, Shuming, et al.. (2017). On-Chip Relative Single-Event Transient/Single- Event Upset Susceptibility Test Circuit for Integrated Circuits Working in Real Time. IEEE Transactions on Nuclear Science. 65(1). 376–381. 4 indexed citations
20.
Chi, Yaqing, et al.. (2009). Simulation and analysis of single-electron transistors with 1-dimension multiple islands. 695–698. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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