H. Ennen

2.6k citations

30 papers · 2.2k indexed · 1 hit paper · h-index 22

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies

Papers in

Atomic and Molecular Physics, and Optics 24
- Semiconductor Quantum Structures and Devices 20
- Semiconductor materials and interfaces 6
Surfaces, Coatings and Films 4
- Electron and X-Ray Spectroscopy Techniques 4

Co-authors: Gernot S. Pomrenke J. Schneider A. Axmann U. Kaufmann W.H. Haydl J. Windscheif H. Müller T. Wosiński
Journals: Journal of Applied Physics (10 papers)Applied Physics Letters (6 papers)Physical review. B, Condensed matter (6 papers)Journal of Crystal Growth (3 papers)Journal of Electronic Materials (1 paper)
Partner nations: Germany United States Sweden

In The Last Decade

H. Ennen

30 papers receiving 2.0k citations

Hit Papers

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1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon 1983 · 453 citations

Peers

Countries citing papers authored by H. Ennen

Since Specialization

Citations

This map shows the geographic impact of H. Ennen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Ennen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Ennen more than expected).

Fields of papers citing papers by H. Ennen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Ennen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Ennen. The network helps show where H. Ennen may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Ennen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Ennen Line = papers co-authored together H. Ennen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Doping density dependence of intersubband transitions in GaAs/AlxGa1−xAs quantum-well structures Journal of Applied Physics ·M. Ramsteiner, J.D. Ralston, P. Koidl, B. Dischler, Nirmila Sari, J. Wagner, H. Ennen	1990	37
2	Effects of Si Incorporation and Electrical Activation on Intersubband Optical Absorption in MBE-grown GaAs/AlGaAs Multiple Quantum Well Structures MRS Proceedings ·J.D. Ralston, H. Ennen, Matthias Maier, M. Ramsteiner, B. Dischler, P. Koidl, P. Hiesinger	1989	3
3	Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy Applied Physics Letters ·S. D. Offsey, W. J. Schaff, P.J. Tasker, H. Ennen, L.F. Eastman	1989	33
4	Resonance Raman scattering of Si local vibrational modes in GaAs Physical review. B, Condensed matter ·M. Ramsteiner, J. Wagner, H. Ennen, Matthias Maier	1988	36
5	Erbium doping of molecular beam epitaxial GaAs Applied Physics Letters ·Robin S. Smith, H. Müller, H. Ennen, L. Imogene Doher, Matthias Maier	1987	60
6	Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxy Journal of Applied Physics ·H. Ennen, J. Wagner, H. Müller, Robin S. Smith	1987	109
7	Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP Journal of Applied Physics ·Gernot S. Pomrenke, H. Ennen, W.H. Haydl	1986	106
8	Neodymium complexes in GaP separated by photoluminescence excitation spectroscopy Journal of Applied Physics ·J. Wagner, H. Ennen, H. Müller	1986	23
9	Rare earth ions in LPE III-V semiconductors Journal of Crystal Growth ·Nikolay E. Filyukov, J. Weber, A. Hangleiter, K.W. Benz, H. Ennen, Louis Mialhe	1986	53
10	Optical Detection of Magnetic Resonance in the Optically Excited <sup>2</sup>F<sub>5/2</sub>-State of Yb<sup>3+</sup> in InP Materials science forum ·R. Kallenbach, А.Ю. Анисимов, Jay R. Unruh, A. Winnacker, H. Ennen	1986	1
11	1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy Applied Physics Letters ·H. Ennen, Gernot S. Pomrenke, A. Axmann, K. Eisele, W.H. Haydl, J. Schneider	1985	283
12	Ytterbium-doped InP light-emitting diode at 1.0 μm Applied Physics Letters ·W.H. Haydl, H. Müller, H. Ennen, Nikolay E. Filyukov, K.W. Benz	1985	58
13	Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs Journal of Applied Physics ·H. Ennen, Gernot S. Pomrenke, A. Axmann	1985	43
14	Photoluminescence excitation spectroscopy on InP: Yb Physical review. B, Condensed matter ·J. Wagner, J. Windscheif, H. Ennen	1984	22
15	Annealing behavior of the 0.8 eV luminescence in undoped semiinsulating GaAs Applied Physics A ·J. Windscheif, H. Ennen, U. Kaufmann, J. Schneider, Tadashi Kimura	1983	21
16	1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon Applied Physics Letters ·H. Ennen, J. Schneider, Gernot S. Pomrenke, A. Axmann Hit paper breakdown →	1983	453
17	Spectroscopic study of vanadium in GaP and GaAs Physical review. B, Condensed matter ·U. Kaufmann, H. Ennen, J. Schneider, R. Wörner, J. Weber, Florian J. Kohl	1982	67
18	Donor-acceptor pairs in GaP and GaAs involving the deep nickel acceptor Applied Physics Letters ·H. Ennen, U. Kaufmann, J. Schneider	1981	37
19	Optical spectra and Zeeman analysis of the3d7state of cobalt in GaP Physical review. B, Condensed matter ·J. Weber, H. Ennen, U. Kaufmann, J. Schneider	1980	27
20	Nickel and iron—Multivalence impurities in GaP Journal of Applied Physics ·H. Ennen, U. Kaufmann	1980	15

About H. Ennen

H. Ennen is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Materials Chemistry, Condensed Matter Physics and Electrical and Electronic Engineering, having authored 30 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (8 papers), Silicon Nanostructures and Photoluminescence (7 papers), Semiconductor materials and interfaces (6 papers), Luminescence Properties of Advanced Materials (5 papers), Quantum Dots Synthesis And Properties (4 papers), Semiconductor Lasers and Optical Devices (4 papers) and Electron and X-Ray Spectroscopy Techniques (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.3k citations), Electrical and Electronic Engineering (1.6k citations), Materials Chemistry (1.2k citations), Condensed Matter Physics (224 citations) and Surfaces, Coatings and Films (105 citations). H. Ennen has collaborated with scholars based in Germany, United States and Sweden. Frequent co-authors include Gernot S. Pomrenke, J. Schneider, A. Axmann, U. Kaufmann, J. Schneider, W.H. Haydl, J. Windscheif, H. Müller, T. Wosiński and E. R. Weber. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Physical review. B, Condensed matter, Journal of Crystal Growth and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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