K. Eisele

632 total citations
23 papers, 489 citations indexed

About

K. Eisele is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, K. Eisele has authored 23 papers receiving a total of 489 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in K. Eisele's work include Semiconductor Lasers and Optical Devices (5 papers), Photonic and Optical Devices (4 papers) and Semiconductor Quantum Structures and Devices (4 papers). K. Eisele is often cited by papers focused on Semiconductor Lasers and Optical Devices (5 papers), Photonic and Optical Devices (4 papers) and Semiconductor Quantum Structures and Devices (4 papers). K. Eisele collaborates with scholars based in Germany and United States. K. Eisele's co-authors include Gernot S. Pomrenke, H. Ennen, J. Schneider, W.H. Haydl, A. Axmann, Kazuya Kurokawa, Rainer Engelbrecht, J.D. Ralston, R. E. Sah and S. Weisser and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

K. Eisele

20 papers receiving 454 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Eisele Germany 8 401 273 137 93 46 23 489
Morio Inoue Japan 11 536 1.3× 252 0.9× 165 1.2× 65 0.7× 45 1.0× 55 620
Tomio Izumi Japan 13 323 0.8× 317 1.2× 129 0.9× 85 0.9× 51 1.1× 43 450
Tadatsugu Itoh Japan 12 351 0.9× 157 0.6× 152 1.1× 51 0.5× 110 2.4× 44 422
F. Zignani Italy 14 439 1.1× 228 0.8× 104 0.8× 79 0.8× 139 3.0× 46 552
Hideki Tsuya Japan 17 753 1.9× 333 1.2× 271 2.0× 140 1.5× 44 1.0× 46 820
Y. J. van der Meulen United States 10 357 0.9× 169 0.6× 184 1.3× 66 0.7× 59 1.3× 13 456
S. Zerlauth Austria 11 313 0.8× 179 0.7× 240 1.8× 80 0.9× 36 0.8× 28 433
D. Bahnck United States 10 309 0.8× 128 0.5× 213 1.6× 67 0.7× 64 1.4× 21 423
R. Tsu United States 12 486 1.2× 253 0.9× 255 1.9× 76 0.8× 55 1.2× 18 586
P. Gaworzewski Germany 15 599 1.5× 255 0.9× 274 2.0× 57 0.6× 65 1.4× 44 690

Countries citing papers authored by K. Eisele

Since Specialization
Citations

This map shows the geographic impact of K. Eisele's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Eisele with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Eisele more than expected).

Fields of papers citing papers by K. Eisele

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Eisele. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Eisele. The network helps show where K. Eisele may publish in the future.

Co-authorship network of co-authors of K. Eisele

This figure shows the co-authorship network connecting the top 25 collaborators of K. Eisele. A scholar is included among the top collaborators of K. Eisele based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Eisele. K. Eisele is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eisele, K., J. Daleiden, & J. Ralston. (1996). Low temperature chemically assisted ion-beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 1780–1783. 3 indexed citations
2.
Daleiden, J., K. Eisele, R. E. Sah, K.‐H. Schmidt, & J.D. Ralston. (1995). Chemical analysis of a Cl2/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(5). 2022–2024. 9 indexed citations
3.
Sah, R. E., J.D. Ralston, S. Weisser, & K. Eisele. (1995). Characteristics of a two-component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors. Applied Physics Letters. 67(7). 927–929. 11 indexed citations
4.
Ralston, J.D., K. Eisele, R. E. Sah, et al.. (1994). Enhanced CAIBE for high-speed OEICs. III-Vs Review. 7(5). 51–55. 3 indexed citations
5.
Ralston, J.D., K. Eisele, R. E. Sah, et al.. (1994). Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguide lasers suitable for monolithic integration. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 211–212. 1 indexed citations
6.
Ralston, J.D., S. Weisser, K. Eisele, et al.. (1994). Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers. IEEE Photonics Technology Letters. 6(9). 1076–1079. 26 indexed citations
7.
Ralston, J.D., K. Eisele, R. E. Sah, et al.. (1994). Enhanced Dry-etched Mirror Process For High-speed And Monolithically Integrated GaAs-based MQW Lasers. 4_24–4_25.
8.
Eisele, K., W. Rothemund, & B. Dischler. (1990). Photolytic silicon nitride deposition for gallium arsenide by 193 nm excimer laser radiation. Vacuum. 41(4-6). 1081–1083.
9.
Eisele, K.. (1986). Etching of SiO2 in a narrowly confined plasma of high power density. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(5). 1227–1232. 2 indexed citations
10.
Ennen, H., Gernot S. Pomrenke, A. Axmann, et al.. (1985). 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. Applied Physics Letters. 46(4). 381–383. 283 indexed citations
11.
Eisele, K.. (1981). SF 6, a Preferable Etchant for Plasma Etching Silicon. Journal of The Electrochemical Society. 128(1). 123–126. 69 indexed citations
12.
Eisele, K.. (1978). The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma. Revue de Physique Appliquée. 13(12). 701–703. 2 indexed citations
13.
Richter, Hans, et al.. (1977). Abstract: Examination of the oxygen bonding at GaAs(111) surfaces by thermodesorption and ESCA measurements. Journal of Vacuum Science and Technology. 14(4). 920–920. 2 indexed citations
14.
Eisele, K. & Michael Schulz. (1977). 2.1 Metal-semiconductor junctions—related to deposition of thin films. Vacuum. 27(3). 181–188. 2 indexed citations
15.
Eisele, K.. (1975). Charge Storage and Stoichiometry in Electron Beam Evaporated Alumina. Journal of The Electrochemical Society. 122(1). 148–152. 7 indexed citations
16.
Brenner, Howard & K. Eisele. (1966). Determination of the pump modulation factor of varactor diodes under operating conditions. IEEE Transactions on Electron Devices. ED-13(4). 415–420.
17.
Eisele, K., Rainer Engelbrecht, & Kazuya Kurokawa. (1965). Balanced transistor amplifiers for precise wideband microwave applications. 18–19. 34 indexed citations
18.
Eisele, K.. (1964). Refrigerated Microwave Noise Sources. IEEE Transactions on Instrumentation and Measurement. IM-13(4). 336–342. 9 indexed citations
19.
Eisele, K., et al.. (1963). 4-gc Parametric Amplifier for Satellite Communication Ground Station Receiver. Bell System Technical Journal. 42(4). 1887–1908. 6 indexed citations
20.
Eisele, K. & A. C. Hollis Hallett. (1958). THE VISCOSITY OF LIQUID HELIUM AT FREQUENCIES OF 11.8 AND 35.5 KC./SEC.. Canadian Journal of Physics. 36(1). 25–34. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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