A. Axmann

1.6k citations

35 papers · 1.3k indexed · 1 hit paper · h-index 15

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 12
- Semiconductor materials and interfaces 4
Materials Chemistry top 5%
- Silicon Nanostructures and Photoluminescence 9
Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 6
- Advanced Semiconductor Detectors and Materials 6
- Semiconductor materials and devices 4
Condensed Matter Physics top 10%
Ceramics and Composites top 10%
Computational Mechanics
- Ion-surface interactions and analysis 7

Co-authors: H. Ennen Gernot S. Pomrenke J. Schneider W.H. Haydl K. Eisele J. Rosenzweig J. Kühl C. Moglestue
Cited by: Atomic and Molecular Physics, and Optics Materials Chemistry Electrical and Electronic Engineering
Journals: Applied Physics Letters (6 papers)Solid State Communications (3 papers)Journal of Applied Physics (3 papers)
Partner nations: Germany Austria

In The Last Decade

A. Axmann

35 papers receiving 1.2k citations

Hit Papers

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Peers

Countries citing papers authored by A. Axmann

Since Specialization

Citations

This map shows the geographic impact of A. Axmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Axmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Axmann more than expected).

Fields of papers citing papers by A. Axmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Axmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Axmann. The network helps show where A. Axmann may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Axmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Axmann Line = papers co-authored together A. Axmann links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	FRM-II: The new German research reactor Nuclear Engineering and Design ·A. Axmann,K. Böning,Natalia V. Espino	1997	12
2	Picosecond electron and hole transport in metal-semiconductor-metal photodetectors Semiconductor Science and Technology ·J. Kühl,Hanady Almahmood,J. Rosenzweig,C. Moglestue,A. Axmann	1992	2
3	Characterization of picosecond GaAs metal-semiconductor-metal photodetectors Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J. Rosenzweig,C. Moglestue,A. Axmann,J. Schneider,任汉中,H. Broekhuis,Daniel Berglund,Hanady Almahmood,H. Leier,A. Forchel	1991	6
4	Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes Applied Physics Letters ·H. Broekhuis,Hanady Almahmood,J. Kühl,C. Moglestue,J. Rosenzweig,A. Axmann,J. Schneider,A. Hülsmann,H. Leier,A. Forchel	1991	18
5	Subpicosecond carrier lifetimes in radiation-damaged GaAs Applied Physics Letters ·H. Broekhuis,J. Kühl,J. Rosenzweig,A. Axmann,J. Schneider	1991	80
6	Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors Journal of Applied Physics ·C. Moglestue,J. Rosenzweig,J. Kühl,Hanady Almahmood,H. Broekhuis,A. Axmann,J. Schneider,A. Hülsmann	1991	63
7	Picosecond Optoelectronic Switches Physica Scripta ·Th. Pfeiffer,J. Kühl,Miklós Serényi,Swarnali Dutta,E. O. Göbel,L. Palmetshofer,A. Axmann	1986	2
8	1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy Applied Physics Letters ·H. Ennen,Gernot S. Pomrenke,A. Axmann,K. Eisele,W.H. Haydl,J. Schneider	1985	283
9	Raman scattering studies in phosphorus implanted and laser annealed boron doped Si Solid State Communications ·R. Contreras,M. Cardona,A. Axmann	1985	2
10	Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs Journal of Applied Physics ·H. Ennen,Gernot S. Pomrenke,A. Axmann	1985	43
11	Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study MRS Proceedings ·J. Wagner,R. Contreras,A. Compaan,M. Cardona,A. Axmann	1983	2
12	PHOTOLUMINESCENCE IN HEAVILY DOPED Si AND Ge Le Journal de Physique Colloques ·Carolina Ehrenfeld,A. Compaan,A. Axmann	1983	1
13	Raman Scattering in Ultra Heavily Doped Si and Ge: The Dependence on Free Carrier and Substitutional Dopant Densities MRS Proceedings ·A. Compaan,R. Contreras,M. Cardona,A. Axmann	1983	5
14	THE ELECTRONIC STRUCTURE OF HEAVILY DOPED ION IMPLANTED LASER ANNEALED SILICON : ELLIPSOMETRIC MEASUREMENTS Le Journal de Physique Colloques ·L. Viña,C. P. Umbach,A. Compaan,M. Cardona,A. Axmann	1983	2
15	1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconbreakdown → Applied Physics Letters ·H. Ennen,J. Schneider,Gernot S. Pomrenke,A. Axmann	1983	453
16	Temperature dependence of the compressibility of d8-naphthalene physica status solidi (a) ·Aleksandar Ristović,A. Axmann,H. Egger,J. Kalus	1982	15
17	Fine structure and critical behaviour of the magnetic ordering of MnOOH Journal of Magnetism and Magnetic Materials ·A. Axmann,H. Dachs,Kiran Weston	1980	3
18	Implantation doping of germanium with Sb, As, and P Applied Physics A ·A. Axmann,Michael Schulz,C. R. Fritzsche	1977	18
19	The investigation of atomic motions in crystalline, amorphous and liquid selenium, and in crystalline and liquid tellurium by neutron spectroscopy Discussions of the Faraday Society ·A. Axmann,M. F. Gimenez,A. Kollmar,T. Springer	1970	51
20	Streuung langsamer Neutronen an polykristallinem Selen und Tellur physica status solidi (b) ·A. Axmann,W. Gissler	1967	11

About A. Axmann

A. Axmann is a scholar working on Atomic and Molecular Physics, and Optics, Radiation and Computational Mechanics, having authored 35 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (12 papers), Silicon Nanostructures and Photoluminescence (9 papers), Ion-surface interactions and analysis (7 papers), Silicon and Solar Cell Technologies (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Advanced Semiconductor Detectors and Materials (6 papers), Semiconductor materials and interfaces (4 papers) and Semiconductor materials and devices (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (583 citations), Materials Chemistry (812 citations) and Electrical and Electronic Engineering (932 citations). A. Axmann has collaborated with scholars based in Germany and Austria. Frequent co-authors include H. Ennen, Gernot S. Pomrenke, J. Schneider, W.H. Haydl, K. Eisele, J. Rosenzweig, J. Kühl, J. Schneider, C. Moglestue and A. Kollmar. Their work appears in journals such as Applied Physics Letters, Solid State Communications, Journal of Applied Physics, Microelectronic Engineering and Nuclear Engineering and Design.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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