U. Kaufmann

5.5k citations

108 papers · 4.4k indexed · h-index 36

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 42
- GaN-based semiconductor devices and materials 38
Atomic and Molecular Physics, and Optics 69
- Semiconductor Quantum Structures and Devices 39
- Semiconductor materials and interfaces 27
- Advanced Chemical Physics Studies 13

Co-authors: J. Schneider M. Kunzer H. Obloh Matthias Maier P. Schlotter J. Windscheif H. Ennen A. Ramakrishnan
Journals: Physical review. B, Condensed matter (27 papers)Applied Physics Letters (16 papers)Solid State Communications (9 papers)Journal of Applied Physics (5 papers)Materials Science and Engineering B (5 papers)
Partner nations: Germany United States Japan

In The Last Decade

U. Kaufmann

108 papers receiving 4.2k citations

Peers

Countries citing papers authored by U. Kaufmann

Since Specialization

Citations

This map shows the geographic impact of U. Kaufmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Kaufmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Kaufmann more than expected).

Fields of papers citing papers by U. Kaufmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Kaufmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Kaufmann. The network helps show where U. Kaufmann may publish in the future.

Co-authorship network

The 25 scholars most cited alongside U. Kaufmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Kaufmann Line = papers co-authored together U. Kaufmann links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effects of pH control by acid addition at the aqueous processing of cathodes for lithium ion batteries Electrochimica Acta ·Werner Bauer, Umberto Dello, Marcus Müller, U. Kaufmann	2019	74
2	Well width dependent luminescence characteristics of UV‐violet emitting GaInN QW LED structures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. Kunzer, Cecilia Verónica Muñoz García, Markus Maier, K. Köhler, U. Kaufmann, J. Wagner	2008	5
3	Free Form Fabrication of 3D-Ceramic Parts with InkJet-Printing Advances in science and technology ·U. Kaufmann, Walter Lanchet, Akihiro TANIMURA, Werner Bauer	2006	2
4	III-N based short-wavelength LEDs, LUCO-LEDs, and lasers physica status solidi (a) ·F. Sommer, S.J. Glick, Fritz Vollrath, K. Köhler, M. Kunzer, S. Müller, P. Schlotter, W. Pletschen, U. Kaufmann, J. Wagner	2004	3
5	Self-compensation in Mg doped p-type GaN grown by MOCVD Journal of Crystal Growth ·H. Obloh, K. H. Bachem, U. Kaufmann, M. Kunzer, Matthias Maier, A. Ramakrishnan, P. Schlotter	1998	110
6	Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 Materials Science and Engineering B ·C. J. Merz, M. Kunzer, Branko Šantić, U. Kaufmann, Isamu Akasaki, Hiroshi Amano	1997	6
7	Resonant Raman scattering in GaN/(AlGa)N single quantum wells Applied Physics Letters ·D. Behr, R. Niebuhr, J. Wagner, K. H. Bachem, U. Kaufmann	1997	57
8	Magnetic circular dichroism and optical detection of electron paramagnetic resonance of theSbGaheteroantisite defect in GaAs:Sb Physical review. B, Condensed matter ·P. Omling, D.M. Hofmann, M. Kunzer, M. Baeumler, U. Kaufmann	1992	10
9	Comparative study of theSbGaheteroantisite and off-centerOAsin GaAs Physical review. B, Condensed matter ·Asmaa Elabdallah, M. Kunzer, F. Fuchs, G. Hendorfer, U. Kaufmann	1992	2
10	Kinetics of holes optically excited from theAsGaEL2 midgap level in semi-insulating GaAs Physical review. B, Condensed matter ·G. Hendorfer, U. Kaufmann	1991	6
11	Photo response of the EL2 absorption band and of the As+Ga ESR signal in GaAs Revue de Physique Appliquée ·B. Dischler, U. Kaufmann	1988	17
12	Electronic structure of the neutral manganese acceptor in gallium arsenide Physical Review Letters ·J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler, Florian J. Kohl	1987	218
13	Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs Applied Physics Letters ·J. Wagner, Celia S-L. Kuo, U. Kaufmann	1986	27
14	Electron tunneling intoNb3Sn,Nb3Ge, andNb3Al Physical review. B, Condensed matter ·J. Geerk, U. Kaufmann, Thayná Hellen dos Santos Tomaz, H. Rietschel	1986	21
15	New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs Applied Physics Letters ·U. Kaufmann, M. Baeumler, J. Windscheif, W. Wilkening	1986	19
16	Photoresponse of the AsGa antisite defect in as-grown GaAs Applied Physics Letters ·M. Baeumler, U. Kaufmann, J. Windscheif	1985	60
17	ENDOR investigation of Ni3+ in GaP Solid State Communications ·S. Neelima, J. R. Niklas, J.‐M. Spaeth, U. Kaufmann, J. Schneider	1983	7
18	Quantitative esr analysis of deep defects in LEC-grown GaP Journal of Electronic Materials ·U. Kaufmann, T. A. Kennedy	1981	23
19	Optical spectra and Zeeman analysis of the3d7state of cobalt in GaP Physical review. B, Condensed matter ·J. Weber, H. Ennen, U. Kaufmann, J. Schneider	1980	27
20	ESR-analysis of 3d7 ions in IBIIIVI2 semiconductors Solid State Communications ·U. Kaufmann, A. Räuber, J. Schneider	1974	21

About U. Kaufmann

U. Kaufmann is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 108 papers that have together received 4.4k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (39 papers), GaN-based semiconductor devices and materials (38 papers), Semiconductor materials and devices (30 papers), Semiconductor materials and interfaces (27 papers), Ga2O3 and related materials (21 papers), ZnO doping and properties (16 papers), Advanced Chemical Physics Studies (13 papers) and Chalcogenide Semiconductor Thin Films (12 papers). The work is most often cited by research in Condensed Matter Physics (2.0k citations), Electronic, Optical and Magnetic Materials (1.3k citations), Atomic and Molecular Physics, and Optics (2.1k citations), Materials Chemistry (1.9k citations) and Electrical and Electronic Engineering (2.2k citations). U. Kaufmann has collaborated with scholars based in Germany, United States and Japan. Frequent co-authors include J. Schneider, M. Kunzer, H. Obloh, J. Schneider, Matthias Maier, P. Schlotter, J. Windscheif, H. Ennen, A. Ramakrishnan and M. Baeumler. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters, Solid State Communications, Journal of Applied Physics and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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