G. C. Schwartz

750 total citations
26 papers, 535 citations indexed

About

G. C. Schwartz is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, G. C. Schwartz has authored 26 papers receiving a total of 535 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 16 papers in Electronic, Optical and Magnetic Materials and 10 papers in Materials Chemistry. Recurrent topics in G. C. Schwartz's work include Semiconductor materials and devices (15 papers), Copper Interconnects and Reliability (14 papers) and Anodic Oxide Films and Nanostructures (7 papers). G. C. Schwartz is often cited by papers focused on Semiconductor materials and devices (15 papers), Copper Interconnects and Reliability (14 papers) and Anodic Oxide Films and Nanostructures (7 papers). G. C. Schwartz collaborates with scholars based in United States. G. C. Schwartz's co-authors include Philipp Schaible, Reese E. Jones, J. L. Mauer, J. S. Logan, W. Patrick, Wen‐Yaung Lee, J. M. Eldridge, R. Carruthers, L. I. Maissel and J. Chapple-Sokol and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Thin Solid Films.

In The Last Decade

G. C. Schwartz

25 papers receiving 485 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. C. Schwartz United States	12	402	192	142	132	109	26	535
Naokichi Hosokawa Japan	14	307 0.8×	220 1.1×	124 0.9×	65 0.5×	138 1.3×	37	468
M. F. C. Willemsen Netherlands	13	429 1.1×	189 1.0×	51 0.4×	73 0.6×	139 1.3×	22	539
D. J. Vitkavage United States	11	781 1.9×	199 1.0×	85 0.6×	151 1.1×	186 1.7×	27	876
P. D. Davidse United States	8	205 0.5×	107 0.6×	59 0.4×	79 0.6×	116 1.1×	8	339
Hideo Sunami Japan	12	452 1.1×	190 1.0×	63 0.4×	51 0.4×	49 0.4×	40	566
A. Appelbaum United States	13	301 0.7×	102 0.5×	54 0.4×	81 0.6×	64 0.6×	37	517
Shigetaro Ogura Japan	11	206 0.5×	207 1.1×	41 0.3×	115 0.9×	106 1.0×	21	410
E. Franke Germany	12	200 0.5×	181 0.9×	71 0.5×	46 0.3×	64 0.6×	13	361
G. Queirolo Italy	15	530 1.3×	198 1.0×	50 0.4×	133 1.0×	59 0.5×	75	734
A. Weber Germany	14	222 0.6×	263 1.4×	69 0.5×	44 0.3×	255 2.3×	21	449

Countries citing papers authored by G. C. Schwartz

Since Specialization

Citations

This map shows the geographic impact of G. C. Schwartz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. C. Schwartz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. C. Schwartz more than expected).

Fields of papers citing papers by G. C. Schwartz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. C. Schwartz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. C. Schwartz. The network helps show where G. C. Schwartz may publish in the future.

Co-authorship network of co-authors of G. C. Schwartz

This figure shows the co-authorship network connecting the top 25 collaborators of G. C. Schwartz. A scholar is included among the top collaborators of G. C. Schwartz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. C. Schwartz. G. C. Schwartz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Vender, D., G. S. Oehrlein, & G. C. Schwartz. (1993). Selective reactive ion etching of phosphorus-doped oxide over undoped SiO2. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(2). 279–285. 2 indexed citations

Schwartz, G. C., et al.. (1992). Gap‐Fill with PECVD SiO2 Using Deposition/Sputter Etch Cycles. Journal of The Electrochemical Society. 139(3). 927–932. 9 indexed citations

Schwartz, G. C., et al.. (1992). The Effective Dielectric Constant of Silicon Dioxides Deposited in the Spaces Between Adjacent Conductors. Journal of The Electrochemical Society. 139(12). L118–L122. 9 indexed citations

Patrick, W., et al.. (1992). Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films. Journal of The Electrochemical Society. 139(9). 2604–2613. 53 indexed citations

Schwartz, G. C.. (1991). Distortion of Conductors Formed by a Lift‐Off Process. Journal of The Electrochemical Society. 138(2). 621–624. 3 indexed citations

Mathad, Shridhar N., G. C. Schwartz, Richard A. Gottscho, & Insulation Division. (1990). Proceedings of the eighth symposium on plasma processing. Electrochemical Society eBooks. 39 indexed citations

Schaible, Philipp & G. C. Schwartz. (1985). Selective Reactive Ion Etching of TiW. Journal of The Electrochemical Society. 132(3). 730–731. 1 indexed citations

Schwartz, G. C. & Philipp Schaible. (1983). The Effects of Arsenic Doping in Reactive Ion Etching of Silicon in Chlorinated Plasmas. Journal of The Electrochemical Society. 130(9). 1898–1905. 14 indexed citations

Schwartz, G. C. & Philipp Schaible. (1983). Reactive Ion Etching of Copper Films. Journal of The Electrochemical Society. 130(8). 1777–1779. 60 indexed citations

10.

Schwartz, G. C., et al.. (1982). Auger profiling and electrical resistivity studies of the interface between evaporated Al–Cu layers. Journal of Vacuum Science and Technology. 20(3). 396–399. 1 indexed citations

11.

Lee, Wen‐Yaung, J. M. Eldridge, & G. C. Schwartz. (1981). Reactive ion etching induced corrosion of Al and Al-Cu films. Journal of Applied Physics. 52(4). 2994–2999. 35 indexed citations

12.

Eldridge, J. M., et al.. (1981). Summary Abstract: Reactive ion etching induced corrosion of Al and Al–Cu films. Journal of Vacuum Science and Technology. 18(2). 359–360. 3 indexed citations

13.

Schwartz, G. C. & Philipp Schaible. (1979). Reactive ion etching of silicon. Journal of Vacuum Science and Technology. 16(2). 410–413. 71 indexed citations

14.

Schwartz, G. C., et al.. (1979). Competitive Mechanisms in Reactive Ion Etching in a CF 4 Plasma. Journal of The Electrochemical Society. 126(3). 464–469. 34 indexed citations

15.

Schwartz, G. C., et al.. (1979). ChemInform Abstract: COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CARBON TETRAFLUORIDE PLASMA. Chemischer Informationsdienst. 10(27). 1 indexed citations

16.

Schwartz, G. C., et al.. (1976). Monolithic Studs as Interlevel Connectors in Planar Multilevel LSI. Journal of The Electrochemical Society. 123(2). 300–301. 1 indexed citations

17.

Schwartz, G. C., et al.. (1976). Anodic Processing for Multilevel LSI. Journal of The Electrochemical Society. 123(1). 34–37. 11 indexed citations

18.

Schwartz, G. C., et al.. (1975). An Anodic Process for Forming Planar Interconnection Metallization for Multilevel LSI. Journal of The Electrochemical Society. 122(11). 1508–1516. 34 indexed citations

19.

Schwartz, G. C. & Reese E. Jones. (1970). Argon Content of SiO₂ Films Deposited by RF Sputtering in Argon. IBM Journal of Research and Development. 14(1). 52–60. 24 indexed citations

20.

Schwartz, G. C., Reese E. Jones, & L. I. Maissel. (1969). Distribution of Material Sputtered from a Disk Electrode. Journal of Vacuum Science and Technology. 6(3). 351–354. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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