J. Chapple-Sokol

670 total citations
22 papers, 546 citations indexed

About

J. Chapple-Sokol is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Chapple-Sokol has authored 22 papers receiving a total of 546 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Chapple-Sokol's work include Semiconductor materials and devices (13 papers), Thin-Film Transistor Technologies (9 papers) and Copper Interconnects and Reliability (5 papers). J. Chapple-Sokol is often cited by papers focused on Semiconductor materials and devices (13 papers), Thin-Film Transistor Technologies (9 papers) and Copper Interconnects and Reliability (5 papers). J. Chapple-Sokol collaborates with scholars based in United States. J. Chapple-Sokol's co-authors include Gareth Hougham, G. Tesoro, Alfred Viehbeck, Roy G. Gordon, David E. Kotecki, R. Carruthers, W. Patrick, G. C. Schwartz, J. Batey and E. Tierney and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Chapple-Sokol

21 papers receiving 515 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Chapple-Sokol United States 11 285 274 187 109 89 22 546
R.G. Saint-Jacques Canada 13 452 1.6× 383 1.4× 110 0.6× 81 0.7× 139 1.6× 45 653
Veena Rao United States 9 231 0.8× 247 0.9× 196 1.0× 61 0.6× 184 2.1× 26 619
N. Rosman France 12 349 1.2× 301 1.1× 99 0.5× 70 0.6× 140 1.6× 23 556
D. Knoesen South Africa 15 334 1.2× 500 1.8× 216 1.2× 62 0.6× 91 1.0× 47 694
Nobuo Ando Japan 14 157 0.6× 496 1.8× 108 0.6× 56 0.5× 56 0.6× 57 677
Masahiro Miyamoto Japan 11 144 0.5× 211 0.8× 163 0.9× 102 0.9× 44 0.5× 43 507
T. N. Wittberg United States 12 205 0.7× 198 0.7× 54 0.3× 66 0.6× 53 0.6× 38 459
Annie Bessaudou France 13 265 0.9× 417 1.5× 247 1.3× 47 0.4× 106 1.2× 33 682
Françoise Cosset France 10 194 0.7× 272 1.0× 225 1.2× 32 0.3× 39 0.4× 18 452
A. Ermolieff France 14 382 1.3× 510 1.9× 87 0.5× 34 0.3× 131 1.5× 38 723

Countries citing papers authored by J. Chapple-Sokol

Since Specialization
Citations

This map shows the geographic impact of J. Chapple-Sokol's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Chapple-Sokol with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Chapple-Sokol more than expected).

Fields of papers citing papers by J. Chapple-Sokol

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Chapple-Sokol. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Chapple-Sokol. The network helps show where J. Chapple-Sokol may publish in the future.

Co-authorship network of co-authors of J. Chapple-Sokol

This figure shows the co-authorship network connecting the top 25 collaborators of J. Chapple-Sokol. A scholar is included among the top collaborators of J. Chapple-Sokol based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Chapple-Sokol. J. Chapple-Sokol is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Christiansen, C., et al.. (2014). Stress migration in a copper - Aluminum hybrid technology. 2A.1.1–2A.1.5. 1 indexed citations
2.
Gambino, Jeff, Megan M. Wenner, T.L. McDevitt, et al.. (2008). Etching of copper in deionized water rinse. 1–4. 7 indexed citations
3.
Moyne, James, et al.. (2000). Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1287–1296. 10 indexed citations
4.
Moyne, James, et al.. (1999). Yield improvement at the contact process through run-to-run control. 22. 258–263. 3 indexed citations
5.
Hougham, Gareth, G. Tesoro, Alfred Viehbeck, & J. Chapple-Sokol. (1994). Polarization Effects of Fluorine on the Relative Permittivity in Polyimides. Macromolecules. 27(21). 5964–5971. 207 indexed citations
6.
Kotecki, David E., et al.. (1994). Applications of computational fluid dynamics for improved performance in chemical-vapor-deposition reactors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(4). 2752–2757. 3 indexed citations
7.
Chapple-Sokol, J., et al.. (1993). High Quality Plasma‐Enhanced Chemical Vapor Deposited Silicon Nitride Films. Journal of The Electrochemical Society. 140(7). 2071–2075. 35 indexed citations
8.
Robertson, W. M., G. Arjavalingam, Gareth Hougham, et al.. (1992). Microwave properties of free-standing dielectric films. Electronics Letters. 28(1). 62–63. 14 indexed citations
9.
Patrick, W., et al.. (1992). Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films. Journal of The Electrochemical Society. 139(9). 2604–2613. 53 indexed citations
10.
Chapple-Sokol, J., et al.. (1991). Energy Considerations in the Deposition of High‐Quality Plasma‐Enhanced CVD Silicon Dioxide. Journal of The Electrochemical Society. 138(12). 3723–3726. 24 indexed citations
11.
Chapple-Sokol, J., et al.. (1990). Kinetic Modeling of the Chemical Vapor Deposition of Silicon Dioxide from Silane or Disilane and Nitrous Oxide. Journal of The Electrochemical Society. 137(10). 3237–3253. 41 indexed citations
12.
Chapple-Sokol, J., et al.. (1990). Gas-phase kinetics in the atmospheric pressure chemical vapor deposition of silicon from silane and disilane. Journal of Applied Physics. 67(2). 1062–1075. 61 indexed citations
13.
Stathis, J. H., J. Chapple-Sokol, E. Tierney, & J. Batey. (1990). E′ centers and nitrogen-related defects in SiO2 films. Applied Physics Letters. 56(21). 2111–2113. 14 indexed citations
14.
Chapple-Sokol, J., et al.. (1989). A Kinetics Study of the Atmospheric Pressure CVD Reaction of Silane and Nitrous Oxide. Journal of The Electrochemical Society. 136(10). 2993–3003. 23 indexed citations
15.
Chapple-Sokol, J. & Roy G. Gordon. (1989). Substrate-dependent growth of atmospheric pressure chemically vapor deposited silicon dioxide from dichlorosilane and oxygen. Thin Solid Films. 171(2). 291–305. 3 indexed citations
16.
Chapple-Sokol, J., et al.. (1989). RF Power Dependence of the Material Properties of PECVD Silicon Dioxide. MRS Proceedings. 165. 2 indexed citations
17.
Gordon, Roy G., et al.. (1988). Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. STIN. 89. 11316. 1 indexed citations
18.
Chapple-Sokol, J., et al.. (1987). Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.. MRS Proceedings. 105. 2 indexed citations
19.
Gordon, Roy G., et al.. (1985). Studies of chemical vapor deposition of amorphous silicon and transparent electrodes for solar cells. Final Report. 1 indexed citations
20.
Chapple-Sokol, J., et al.. (1982). The etched multiple vertical junction silicon photovoltaic cell. Solar Cells. 6(1). 87–101. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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