Frank Schmid

560 citations

23 papers · 435 indexed · h-index 13

Impact in

Ceramics and Composites top 10%
- Advanced ceramic materials synthesis
Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies

Papers in

Ceramics and Composites 3
- Advanced ceramic materials synthesis 3
Electrical and Electronic Engineering 23
- Silicon Carbide Semiconductor Technologies 22
- Semiconductor materials and devices 16
- Silicon and Solar Cell Technologies 7
- Thin-Film Transistor Technologies 3

Co-authors: Gerhard Pensl Michael Laube G. Wagner Markus Maier Margareta K. Linnarsson Sergey A. Reshanov H. Matsunami Yuki Negoro
Journals: Journal of Applied Physics (4 papers)Materials science forum (12 papers)Journal of Crystal Growth (1 paper)Microelectronic Engineering (1 paper)Applied Physics Letters (1 paper)
Partner nations: Germany Japan United States

In The Last Decade

Frank Schmid

22 papers receiving 425 citations

Peers

Countries citing papers authored by Frank Schmid

Since Specialization

Citations

This map shows the geographic impact of Frank Schmid's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Frank Schmid with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Frank Schmid more than expected).

Fields of papers citing papers by Frank Schmid

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Frank Schmid. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Frank Schmid. The network helps show where Frank Schmid may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Frank Schmid, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Frank Schmid Line = papers co-authored together Frank Schmid links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Ionization Energies of Phosphorus Donors in 6H-SiC Materials science forum ·Frank Schmid, Willian Korim Seiji, M. Krieger, Heiko B. Weber, Gerhard Pensl, Eugene E. Haller	2008	1
2	(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory Materials science forum ·Gerhard Pensl, Frank Schmid, Sergey A. Reshanov, Heiko B. Weber, Michel Bockstedte, Alexander Mattausch, Oleg Pankratov, Takeshi Ohshima, Hisayoshi Itoh	2007	3
3	Deactivation of nitrogen donors in silicon carbide Physical Review B ·Frank Schmid, Sergey A. Reshanov, Heiko B. Weber, Gerhard Pensl, Michel Bockstedte, Alexander Mattausch, Oleg Pankratov, Takeshi Ohshima, H. Itoh	2006	12
4	Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si<sup>+</sup>-/N<sup>+</sup>-Co-Implanted 4H-SiC Materials science forum ·Frank Schmid, Thomas Frank, Gerhard Pensl	2005	3
5	Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Materials science forum ·Fei Yan, Robert P. Devaty, W. J. Choyke, Ádám Gali, Frank Schmid, Gerhard Pensl, G. Wagner	2005	1
6	Defect-engineering in SiC by ion implantation and electron irradiation Microelectronic Engineering ·Gerhard Pensl, Florin Ciobanu, Thomas Frank, Stanislav Ottovich Siptits, M. Krieger, Sergey A. Reshanov, Frank Schmid, Michael Weidner, Takeshi Ohshima, H. Itoh, W. J. Choyke	2005	14
7	Implantation and annealing of aluminum in 4H silicon carbide Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Chloé Andrieu, Frank Schmid, M. Krieger, L. Frey, Anton J. Bauer, Gerhard Pensl, H. Ryssel	2005	10
8	SiC MATERIAL PROPERTIES International Journal of High Speed Electronics and Systems ·Gerhard Pensl, Florin Ciobanu, Thomas Frank, M. Krieger, Sergey A. Reshanov, Frank Schmid, Michael Weidner	2005	34
9	Electrical activation of high-concentration aluminum implanted in 4H-SiC Journal of Applied Physics ·Yuki Negoro, Tsunenobu Kimoto, H. Matsunami, Frank Schmid, Gerhard Pensl	2004	65
10	Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face Materials science forum ·Yuki Negoro, N Santosh, Hiroyuki Matsunami, Tsunenobu Kimoto, Gerhard Pensl, Frank Schmid	2004	1
11	Annealing Process of N<sup>+</sup>-/P<sup>+</sup>-Ions Coimplanted along with Si<sup>+</sup>-, C<sup>+</sup>- or Ne<sup>+</sup>-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect? Materials science forum ·Frank Schmid, Gerhard Pensl	2004	1
12	Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy Journal of Applied Physics ·C. Wilks, Martin Hundhausen, L. Ley, Willian Korim Seiji, Frank Schmid, Gerhard Pensl, Hiroyuki Nagasawa	2004	16
13	Electrical and Optical Characterization of SiC Materials science forum ·Gerhard Pensl, Frank Schmid, Florin Ciobanu, Michael Laube, Sergey A. Reshanov, Che- Marie, Willian Korim Seiji, Adolf Schöner, G. Wagner, Hiroyuki Nagasawa	2003	28
14	Implantation-induced defects in silicon carbide Physica B Condensed Matter ·Gerhard Pensl, Thomas Frank, M. Krieger, Michael Laube, Sergey A. Reshanov, Frank Schmid, Michael Weidner	2003	18
15	Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method Materials science forum ·Willian Korim Seiji, Frank Schmid, Long Xuanqi, Gerhard Pensl, 贾靖雷, S. Greulich‐Weber, T R Dharshan	2003	14
16	Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Materials science forum ·G. Wagner, W. Leitenberger, K. Irmscher, Frank Schmid, Michael Laube, Gerhard Pensl	2002	16
17	Codoping of 4H-SiC with N- and P-Donors by Ion Implantation Materials science forum ·Michael Laube, Frank Schmid, Gerhard Pensl, G. Wagner	2002	15
18	Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC Journal of Applied Physics ·Frank Schmid, Michael Laube, Gerhard Pensl, G. Wagner, Markus Maier	2002	48
19	Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC Journal of Applied Physics ·Michael Laube, Frank Schmid, Gerhard Pensl, G. Wagner, Margareta K. Linnarsson, Markus Maier	2002	107
20	Preparation of epitaxial oxide thin films on Si(100) substrates with CoSi2 surface layers Journal of Crystal Growth ·Yijie Li, S. Linzen, P. Seidel, A. Owyoung, Frank Schmid	1996	1

About Frank Schmid

Frank Schmid is a scholar working on Ceramics and Composites, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 23 papers that have together received 435 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and devices (16 papers), Silicon and Solar Cell Technologies (7 papers), Copper Interconnects and Reliability (6 papers), Advanced ceramic materials synthesis (3 papers), Thin-Film Transistor Technologies (3 papers), Graphene research and applications (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Ceramics and Composites (65 citations), Electrical and Electronic Engineering (411 citations), Atomic and Molecular Physics, and Optics (111 citations), Electronic, Optical and Magnetic Materials (47 citations) and Materials Chemistry (77 citations). Frank Schmid has collaborated with scholars based in Germany, Japan and United States. Frequent co-authors include Gerhard Pensl, Michael Laube, G. Wagner, Markus Maier, Margareta K. Linnarsson, Sergey A. Reshanov, H. Matsunami, Yuki Negoro, Tsunenobu Kimoto and M. Krieger. Their work appears in journals such as Journal of Applied Physics, Materials science forum, Journal of Crystal Growth, Microelectronic Engineering and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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