Alexander Mattausch

1.5k total citations
26 papers, 1.3k citations indexed

About

Alexander Mattausch is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites. According to data from OpenAlex, Alexander Mattausch has authored 26 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 9 papers in Ceramics and Composites. Recurrent topics in Alexander Mattausch's work include Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and devices (12 papers) and Advanced ceramic materials synthesis (9 papers). Alexander Mattausch is often cited by papers focused on Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and devices (12 papers) and Advanced ceramic materials synthesis (9 papers). Alexander Mattausch collaborates with scholars based in Germany, United Kingdom and Japan. Alexander Mattausch's co-authors include Oleg Pankratov, Michel Bockstedte, J. W. Steeds, Matthias Heid, Ádám Gali, Heiko B. Weber, Gerhard Pensl, W. Sullivan, Nicolas G. Wright and Sergey A. Reshanov and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Alexander Mattausch

26 papers receiving 1.2k citations

Peers

Countries citing papers authored by Alexander Mattausch

Since Specialization

Citations

This map shows the geographic impact of Alexander Mattausch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alexander Mattausch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alexander Mattausch more than expected).

Fields of papers citing papers by Alexander Mattausch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alexander Mattausch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alexander Mattausch. The network helps show where Alexander Mattausch may publish in the future.

Co-authorship network of co-authors of Alexander Mattausch

This figure shows the co-authorship network connecting the top 25 collaborators of Alexander Mattausch. A scholar is included among the top collaborators of Alexander Mattausch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alexander Mattausch. Alexander Mattausch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches 2008 ·physica status solidi (b) ·Michel Bockstedte, Ádám Gali, Alexander Mattausch, Oleg Pankratov, J. W. Steeds	37
2	Ab InitioStudy of Graphene on SiC 2007 ·Physical Review Letters ·Alexander Mattausch, Oleg Pankratov	427
3	Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface 2007 ·Materials science forum ·Alexander Mattausch, Oleg Pankratov	6
4	Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models 2006 ·Physical Review B ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov, J. W. Steeds, (unknown), (unknown), W. Sullivan, Nicolas G. Wright	16
5	Kinetic Mechanisms for the Deactivation of Nitrogen in SiC 2006 ·Materials science forum ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	5
6	Deactivation of nitrogen donors in silicon carbide 2006 ·Physical Review B ·Frank Schmid, Sergey A. Reshanov, Heiko B. Weber, Gerhard Pensl, Michel Bockstedte, Alexander Mattausch, Oleg Pankratov, Takeshi Ohshima, H. Itoh	12
7	Ab initio-Theory of Point Defects and Defect Complexes in SiC 2005 ·OPUS FAU (Kooperativer Bibliotheksverbund Berlin-Brandenburg (KOBV), on behalf of the Universitätsbibliothek Erlangen-Nürnberg) ·Alexander Mattausch	7
8	Ab-Initio Study of Dopant Interstitials in 4H-SiC 2005 ·Materials science forum ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov	9
9	Structure and vibrational spectra of carbon clusters in SiC 2004 ·Physical Review B ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov	44
10	A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials 2004 ·Materials science forum ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov	5
11	Ab initiostudy of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials 2004 ·Physical Review B ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	167
12	Solubility of nitrogen and phosphorus in 4H-SiC: A theoretical study 2004 ·Applied Physics Letters ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	47
13	Different roles of carbon and silicon interstitials in the interstitial-mediated boron diffusion inSiC 2004 ·Physical Review B ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	39
14	The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study 2004 ·Materials science forum ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	4
15	Ab initiostudy of the migration of intrinsic defects in3C−SiC 2003 ·Physical review. B, Condensed matter ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	225
16	Identification and Annealing of Common Intrinsic Defect Centers 2003 ·Materials science forum ·Michel Bockstedte, Matthias Heid, Alexander Mattausch, Oleg Pankratov	10
17	Carbon Interstitials in SiC: A Model for the D<sub>II</sub> Center 2002 ·Materials science forum ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov	8
18	Boron in SiC: Structure and Kinetics 2001 ·Materials science forum ·Michel Bockstedte, Alexander Mattausch, Oleg Pankratov	36
19	Interstitials in SiC: a model for the DII center 2001 ·Physica B Condensed Matter ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov	16
20	Self Diffusion in SiC: the Role of Intrinsic Point Defects 2001 ·Materials science forum ·Alexander Mattausch, Michel Bockstedte, Oleg Pankratov	32

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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