Ryosuke Iijima

883 total citations
70 papers, 565 citations indexed

About

Ryosuke Iijima is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ryosuke Iijima has authored 70 papers receiving a total of 565 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ryosuke Iijima's work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Ryosuke Iijima is often cited by papers focused on Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Silicon Carbide Semiconductor Technologies (32 papers). Ryosuke Iijima collaborates with scholars based in Japan, United States and Hungary. Ryosuke Iijima's co-authors include Johji Nishio, Chiharu Ota, Akira Nishiyama, Tsunehiro Ino, M. Takayanagi, M. Koyama, Takeshi Yamaguchi, T. Watanabe, A. Takashima and L. F. Edge and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Macromolecules.

In The Last Decade

Ryosuke Iijima

66 papers receiving 549 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ryosuke Iijima Japan 13 519 84 73 73 33 70 565
Akimasa Kinoshita Japan 12 375 0.7× 128 1.5× 43 0.6× 48 0.7× 15 0.5× 40 407
K. Rottner Sweden 10 399 0.8× 114 1.4× 52 0.7× 51 0.7× 15 0.5× 25 409
Hironori Yoshioka Japan 12 554 1.1× 100 1.2× 107 1.5× 45 0.6× 24 0.7× 26 580
I. Kamata Japan 11 524 1.0× 156 1.9× 120 1.6× 54 0.7× 27 0.8× 20 547
Hironori Nishino Japan 8 319 0.6× 92 1.1× 101 1.4× 59 0.8× 15 0.5× 23 341
E. Luckowski United States 9 309 0.6× 164 2.0× 31 0.4× 47 0.6× 19 0.6× 23 324
Lori A. Lipkin United States 14 809 1.6× 131 1.6× 178 2.4× 79 1.1× 20 0.6× 24 832
Naoyuki Kawabata Japan 11 375 0.7× 99 1.2× 26 0.4× 187 2.6× 77 2.3× 21 411
D. T. Krick United States 7 473 0.9× 75 0.9× 47 0.6× 303 4.2× 23 0.7× 11 491
A. S. Tregubova Russia 12 312 0.6× 91 1.1× 60 0.8× 61 0.8× 14 0.4× 46 332

Countries citing papers authored by Ryosuke Iijima

Since Specialization
Citations

This map shows the geographic impact of Ryosuke Iijima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ryosuke Iijima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ryosuke Iijima more than expected).

Fields of papers citing papers by Ryosuke Iijima

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ryosuke Iijima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ryosuke Iijima. The network helps show where Ryosuke Iijima may publish in the future.

Co-authorship network of co-authors of Ryosuke Iijima

This figure shows the co-authorship network connecting the top 25 collaborators of Ryosuke Iijima. A scholar is included among the top collaborators of Ryosuke Iijima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ryosuke Iijima. Ryosuke Iijima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Nishio, Johji, Chiharu Ota, & Ryosuke Iijima. (2025). Basal plane dislocation structures and single Shockley-type stacking fault shapes in 4H-SiC epitaxial layers. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 106(2). 138–166.
3.
Iijima, Ryosuke, et al.. (2024). Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 358. 89–95.
4.
Nishio, Johji, Chiharu Ota, & Ryosuke Iijima. (2024). Comparison of single Shockley-type stacking fault expansion rates in 4H-SiC under ultraviolet illumination after hydrogen or fluorine ion implantation. Japanese Journal of Applied Physics. 63(10). 101015–101015. 5 indexed citations
5.
6.
Iijima, Ryosuke, Hideki Narita, Ryusuke Hisatomi, et al.. (2023). Rectification Effect of Non-Centrosymmetric Nb/V/Ta Superconductor. Journal of the Magnetics Society of Japan. 47(5). 133–136. 1 indexed citations
7.
Iijima, Ryosuke, et al.. (2023). Demonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned Process. Key engineering materials. 947. 63–68. 1 indexed citations
8.
Nishio, Johji, Chiharu Ota, & Ryosuke Iijima. (2023). Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers. Journal of Electronic Materials. 52(8). 5084–5092. 4 indexed citations
9.
10.
Nishio, Johji, Chiharu Ota, & Ryosuke Iijima. (2021). Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC. Japanese Journal of Applied Physics. 61(SC). SC1005–SC1005. 12 indexed citations
11.
Nishio, Johji, et al.. (2020). Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC. Japanese Journal of Applied Physics. 60(SB). SBBD01–SBBD01. 12 indexed citations
12.
Iijima, Ryosuke, et al.. (2020). Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility. Japanese Journal of Applied Physics. 59(3). 34003–34003. 6 indexed citations
13.
14.
Schimizu, Tatsuo, et al.. (2018). Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability. Materials science forum. 924. 457–460. 16 indexed citations
15.
Harada, Shinsuke, Junji Senzaki, Yusuke Kobayashi, et al.. (2015). Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces. Materials science forum. 821-823. 721–724. 4 indexed citations
16.
Ariyoshi, Kingo, Ryosuke Iijima, Shinsuke Harada, et al.. (2015). Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC. Applied Physics Letters. 106(10). 11 indexed citations
17.
Iijima, Ryosuke, et al.. (2011). Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates. Japanese Journal of Applied Physics. 50(5R). 50201–50201. 2 indexed citations
18.
Suzuki, Mariko, et al.. (2004). Characterization of Si(1 0 0)/HfSiON interface. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 219-220. 851–855. 5 indexed citations
19.
Nishiyama, Akira, Yoshiki Kamata, Ryosuke Iijima, et al.. (2003). Characterization of high-k materials for the advancement of high-speed ULSIs. e-Journal of Surface Science and Nanotechnology. 1. 116–119. 2 indexed citations
20.
Fujiwara, Akihiko, Ryosuke Iijima, Kenji Ishii, et al.. (2002). Local current density detection of individual single-wall carbon nanotubes in a bundle. Applied Physics Letters. 80(11). 1993–1995. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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