Ryosuke Iijima

883 citations

70 papers · 565 · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
- Electromagnetic Compatibility and Noise Suppression
Ceramics and Composites

Papers in

Electrical and Electronic Engineering 63
- Semiconductor materials and devices 54
- Advancements in Semiconductor Devices and Circuit Design 34
- Silicon Carbide Semiconductor Technologies 32
- Integrated Circuits and Semiconductor Failure Analysis 16
- Ferroelectric and Negative Capacitance Devices 9
- Silicon and Solar Cell Technologies 8
- Electromagnetic Compatibility and Noise Suppression 7
Atomic and Molecular Physics, and Optics 9

Co-authors: Johji Nishio (17 shared papers)Chiharu Ota (15 shared papers)Akira Nishiyama (10 shared papers)Tsunehiro Ino (8 shared papers)M. Takayanagi (7 shared papers)M. Koyama (4 shared papers)Takeshi Yamaguchi (4 shared papers)K. Ishimaru (3 shared papers)
Journals: Japanese Journal of Applied Physics (14 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Electronic Materials (4 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (2 papers)
Partner nations: Japan United States Hungary

In The Last Decade

Ryosuke Iijima

66 papers receiving 549 citations

Peers

Countries citing papers authored by Ryosuke Iijima

Since Specialization

Citations

This map shows the geographic impact of Ryosuke Iijima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ryosuke Iijima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ryosuke Iijima more than expected).

Fields of papers citing papers by Ryosuke Iijima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ryosuke Iijima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ryosuke Iijima. The network helps show where Ryosuke Iijima may publish in the future.

Co-authors

The 25 scholars most cited alongside Ryosuke Iijima, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ryosuke Iijima Line = papers co-authored together Ryosuke Iijima links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 70 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics M. Koyama, A. Kaneko, Tsunehiro Ino, M. Koike, Y. Kamata, Ryosuke Iijima, Y. Kamimuta, A. Takashima, Masatoshi Suzuki, Chie Hongo, S. Inumiya, M. Takayanagi, Akira Nishiyama	2003	57
2	Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes Japanese Journal of Applied Physics ·Aoi Okada, Johji Nishio, Ryosuke Iijima, Chiharu Ota, Akihiro Goryu, Masaki Miyazato, Mina Ryo, Takashi Shinohe, M. Miyajima, Tomohisa Kato, Yoshiyuki Yonezawa, Hajime Okumura	2018	26
3	Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs Takeshi Yamaguchi, Ryosuke Iijima, Tsunehiro Ino, Akira Nishiyama, Hideki Satake, Noburu Fukushima	2003	26
4	Investigation of the Universal Mobility of SiC MOSFETs Using Wet Oxide Insulators on Carbon Face With Low Interface State Density IEEE Transactions on Electron Devices ·T. Ohashi, Y. Nakabayashi, Ryosuke Iijima	2018	24
5	Design guideline of HfSiON gate dielectrics for 65 nm CMOS generation T. Watanabe, M. Takayanagi, Ryosuke Iijima, K. Ishimaru, H. Ishiuchi, Y. Tsunashima	2004	19
6	Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes Journal of Applied Physics ·Johji Nishio, Aoi Okada, Chiharu Ota, Ryosuke Iijima	2020	18
7	Novel Gate Insulator Process by Nitrogen Annealing for Si-Face SiC MOSFET with High-Mobility and High-Reliability Materials science forum ·Shunsuke Asaba, Tatsuo Schimizu, Yukio Nakabayashi, Shigeto Fukatsu, Toshihide Ito, Ryosuke Iijima	2018	16
8	Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes Journal of Electronic Materials ·Chiharu Ota, Johji Nishio, Aoi Okada, Ryosuke Iijima	2021	16
9	Shrinkage of Cholesteric Liquid Crystalline Microcapsule as Omnidirectional Cavity to Suppress Optical Loss Advanced Optical Materials ·Yosuke Iwai, Ryosuke Iijima, Kaho Yamamoto, Takuya Akita, Yoshiaki Uchida, Norikazu Nishiyama	2020	15
10	Thermochernical understanding of dielectric breakdown in HfSiON with current acceleration Takeshi Yamaguchi, I. Hirano, Ryosuke Iijima, Ken‐Taro Sekine, M. Takayanagi, Kazuhiro Eguchi, Y. Milani, Noburu Fukushima	2005	13
11	High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes ECS Transactions ·Robert D. Clark, Steven Consiglio, Cory S. Wajda, Gert J. Leusink, Takuya Sugawara, Hajime Nakabayashi, Hemanth Jagannathan, L. F. Edge, P. Jamison, Vamsi Paruchuri, Ryosuke Iijima, Mariko Takayanagi, B.P. Linder, J. Bruley, M. Copel, Vijay Narayanan	2008	13
12	Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC Japanese Journal of Applied Physics ·Johji Nishio, Chiharu Ota, Ryosuke Iijima	2021	12
13	Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC Japanese Journal of Applied Physics ·Johji Nishio, Aoi Okada, Chiharu Ota, Ryosuke Iijima	2020	12
14	Local current density detection of individual single-wall carbon nanotubes in a bundle Applied Physics Letters ·Akihiko Fujiwara, Ryosuke Iijima, Kenji Ishii, Hiroyoshi Suematsu, Hiromichi Kataura, Yutaka Maniwa, Shinzo Suzuki, Yohji Achiba	2002	12
15	Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon Applied Physics Letters ·L. F. Edge, Tuan Vo, Vamsi Paruchuri, Ryosuke Iijima, J. Bruley, Jean Jordan‐Sweet, Bernhard Linder, A. J. Kellock, Takaaki Tsunoda, S. R. Shinde	2011	12
16	Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC Applied Physics Letters ·Kingo Ariyoshi, Ryosuke Iijima, Shinsuke Harada, Kazutoshi Kojima, Junji Senzaki, Yasunori Tanaka, Kazuto Takao, Takashi Shinohe	2015	11
17	Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC physica status solidi (a) ·Johji Nishio, Chiharu Ota, Aoi Okada, Ryosuke Iijima	2020	11
18	Role of Trench Bottom Shielding Region on Switching Characteristics of 4H-SiC Double-Trench Mosfets Materials science forum ·Shinya Kyogoku, Katsuhisa Tanaka, Keiko Ariyoshi, Ryosuke Iijima, Yusuke Kobayashi, Shinsuke Harada	2018	11
19	Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric M. Takayanagi, T. Watanabe, Ryosuke Iijima, K. Ishimaru, Y. Tsunashima	2004	11
20	Degradation mechanism of HfSiON gate insulator and effect of nitrogen composition on the statistical distribution of the breakdown M. Koyama, Hideki Satake, M. Koike, Tsunehiro Ino, Mariko Suzuki, Ryosuke Iijima, Y. Kamimuta, A. Takashima, Chie Hongo, Akira Nishiyama	2004	10

About Ryosuke Iijima

Ryosuke Iijima is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics, having authored 70 papers that have together received 565 indexed citations. Recurring topics across this work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers), Silicon Carbide Semiconductor Technologies (32 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Silicon and Solar Cell Technologies (8 papers), Electromagnetic Compatibility and Noise Suppression (7 papers) and Copper Interconnects and Reliability (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (519 citations), Ceramics and Composites (24 citations), Electronic, Optical and Magnetic Materials (73 citations), Atomic and Molecular Physics, and Optics (84 citations) and Materials Chemistry (73 citations). Ryosuke Iijima has collaborated with scholars based in Japan, United States and Hungary. Frequent co-authors include Johji Nishio, Chiharu Ota, Akira Nishiyama, Tsunehiro Ino, M. Takayanagi, M. Koyama, Takeshi Yamaguchi, K. Ishimaru, L. F. Edge and M. Koike. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of Electronic Materials, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Ryosuke Iijima

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