Yiqiang Chen

2.7k total citations
159 papers, 2.0k citations indexed

About

Yiqiang Chen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Yiqiang Chen has authored 159 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 113 papers in Electrical and Electronic Engineering, 50 papers in Condensed Matter Physics and 25 papers in Materials Chemistry. Recurrent topics in Yiqiang Chen's work include Semiconductor materials and devices (61 papers), GaN-based semiconductor devices and materials (50 papers) and Silicon Carbide Semiconductor Technologies (43 papers). Yiqiang Chen is often cited by papers focused on Semiconductor materials and devices (61 papers), GaN-based semiconductor devices and materials (50 papers) and Silicon Carbide Semiconductor Technologies (43 papers). Yiqiang Chen collaborates with scholars based in China, United States and Canada. Yiqiang Chen's co-authors include Boon‐Teck Ooi, Yunfei En, Bakari M. M. Mwinyiwiwa, Z. Wolanski, Zhiyuan He, Yun Huang, Mingqing Hu, James T. Kwok, Wenxiao Fang and Yun Huang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Agricultural and Food Chemistry.

In The Last Decade

Yiqiang Chen

145 papers receiving 2.0k citations

Peers

Yiqiang Chen

EEE

CMP

Qiming Wang China

Satoshi Tamura Japan

Haibo Huang China

Wenbin Wang China

Minggang Liu China

Marco Silvestri Italy

Xinhua Zhu China

Voitech Stankevič Lithuania

Jun Mei China

Guoguang Zhang China

Qiming Wang China

Yiqiang Chen

1.7k ×1.5

EEE

95 ×0.2

CMP

737 ×2.4

568 ×2.2

776 ×3.0

Citations per year, relative to Yiqiang Chen Yiqiang Chen (= 1×) peers Qiming Wang

Countries citing papers authored by Yiqiang Chen

Since Specialization

Citations

This map shows the geographic impact of Yiqiang Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yiqiang Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yiqiang Chen more than expected).

Fields of papers citing papers by Yiqiang Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yiqiang Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yiqiang Chen. The network helps show where Yiqiang Chen may publish in the future.

Co-authorship network of co-authors of Yiqiang Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Yiqiang Chen. A scholar is included among the top collaborators of Yiqiang Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yiqiang Chen. Yiqiang Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Yiqiang, Fengfan Yang, Yichi Zhang, et al.. (2025). Effect of hydrogen on electrical properties and defects of AlGaN/GaN HEMTs. Applied Physics Letters. 126(22).

Liu, Hongxia, et al.. (2024). Effect of Hydrogen on Electrical Characteristics of AlGaN/GaN HEMTs After HTO Stress. IEEE Transactions on Electron Devices. 71(10). 5895–5900. 2 indexed citations

Chen, Yiqiang, et al.. (2024). Degradation Mechanism of Normally-On AlGaN/GaN HEMTs Under Short- and Long-Term HTRB Stress. IEEE Transactions on Electron Devices. 71(9). 5258–5263.

Chen, Yiqiang, Bo Hou, & Y. H. Lin. (2024). Modeling and Analysis of Monitoring Gate-Oxide Degradation of SiC Power MOSFETs in Circuit by the Fingerprints of Voltage Switching Transient. IEEE Transactions on Power Electronics. 39(12). 16651–16658. 1 indexed citations

Chen, Yiqiang, et al.. (2024). Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs. IEEE Journal of the Electron Devices Society. 12. 698–702. 1 indexed citations

Shao, Weiheng, et al.. (2024). Influence Analysis of Asymmetric Correction Method on the Key Characteristics of the Electromagnetic Dual Probing System. IEEE Sensors Journal. 24(6). 8361–8370. 1 indexed citations

Luo, Chengyang, et al.. (2024). Noninvasive Flexible Current Probe as a Diagnosis Tool Inside a PWM Chopper Module. IEEE Transactions on Instrumentation and Measurement. 73. 1–7. 3 indexed citations

Luo, Chengyang, Yichi Zhang, Weiheng Shao, et al.. (2024). A Novel Noncontact Differential Method for Current and Voltage Measurements on a Printed Trace Simultaneously. IEEE Transactions on Microwave Theory and Techniques. 72(10). 5848–5858. 2 indexed citations

Hu, Shengdong, Yijun Shi, Zhiyuan He, et al.. (2023). Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT. Materials. 16(4). 1484–1484. 3 indexed citations

10.

Liu, Chao, Yijun Shi, Zhiyuan He, et al.. (2023). A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor. IEEE Transactions on Electron Devices. 71(1). 510–515. 4 indexed citations

11.

Cai, X. Z., Yiqiang Chen, & Changjian Zhou. (2023). Total-ionizing dose irradiation induced degradation behavior and mechanism of the Cascode GaN HEMTs. Semiconductor Science and Technology. 38(5). 55006–55006. 3 indexed citations

12.

Shi, Yijun, Zhiyuan He, Yun Huang, et al.. (2023). A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs. IEEE Transactions on Electron Devices. 70(5). 2229–2234. 14 indexed citations

13.

Chen, Yiqiang, et al.. (2022). Degradation and Mechanism of D-Mode AlGaN/GaN MIS-HEMTs Under the Combination Action of Hydrogen and HTGB Stress. IEEE Transactions on Electron Devices. 70(1). 36–42. 4 indexed citations

14.

Shi, Yijun, Zhiyuan He, Yun Huang, et al.. (2022). Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp. IEEE Journal of the Electron Devices Society. 10. 976–982. 1 indexed citations

15.

Chen, Wanjun, Ruize Sun, Chao Liu, et al.. (2022). Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress. IEEE Transactions on Electron Devices. 69(10). 5733–5741. 8 indexed citations

16.

Chen, Yiqiang, Rui Gao, Dengyun Lei, et al.. (2021). Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress. IEEE Journal of the Electron Devices Society. 9. 628–632. 2 indexed citations

17.

Sun, Ruize, Chao Liu, Wanjun Chen, et al.. (2021). Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses. IEEE Transactions on Power Electronics. 37(6). 6711–6719. 15 indexed citations

18.

Gao, Rui, Yijun Shi, Zhiyuan He, et al.. (2020). A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT. IEEE Journal of the Electron Devices Society. 8. 905–910. 10 indexed citations

19.

Chen, Yiqiang, et al.. (2020). Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress. IEEE Transactions on Electron Devices. 67(2). 566–570. 41 indexed citations

20.

Gao, Rui, Dengyun Lei, Zhiyuan He, et al.. (2019). Effect of Moisture Stress on the Resistance of HfO₂/TaO_x-Based 8-Layer 3D Vertical Resistive Random Access Memory. IEEE Electron Device Letters. 41(1). 38–41. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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