Zeheng Wang

1.2k total citations
49 papers, 597 citations indexed

About

Zeheng Wang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zeheng Wang has authored 49 papers receiving a total of 597 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 33 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zeheng Wang's work include GaN-based semiconductor devices and materials (33 papers), Ga2O3 and related materials (16 papers) and Silicon Carbide Semiconductor Technologies (12 papers). Zeheng Wang is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Ga2O3 and related materials (16 papers) and Silicon Carbide Semiconductor Technologies (12 papers). Zeheng Wang collaborates with scholars based in China, Australia and Singapore. Zeheng Wang's co-authors include Yuanzhe Yao, Liang Li, Wanjun Chen, Bo Zhang, Fangzhou Wang, Qi Zhou, Jing Yan, Ruize Sun, Jun Cao and Yuanyuan Shi and has published in prestigious journals such as Advanced Materials, Energy & Environmental Science and Applied Physics Letters.

In The Last Decade

Zeheng Wang

44 papers receiving 574 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zeheng Wang China 17 364 348 194 108 101 49 597
Qiguang Zheng China 11 29 0.1× 75 0.2× 133 0.7× 110 1.0× 28 0.3× 31 310
Zeyu Jiang China 12 222 0.6× 93 0.3× 94 0.5× 453 4.2× 171 1.7× 28 627
M. Nakayama Japan 12 173 0.5× 154 0.4× 270 1.4× 99 0.9× 317 3.1× 37 546
Yandong He China 14 527 1.4× 80 0.2× 63 0.3× 113 1.0× 89 0.9× 107 656
T. F. Qi China 23 200 0.5× 1.5k 4.2× 1.2k 6.4× 408 3.8× 236 2.3× 53 1.7k
А. А. Махнев Russia 12 219 0.6× 176 0.5× 349 1.8× 303 2.8× 116 1.1× 125 687
H. Abu Hassan Malaysia 11 209 0.6× 87 0.3× 72 0.4× 197 1.8× 51 0.5× 31 464
M. A. Morozova Russia 11 307 0.8× 56 0.2× 218 1.1× 57 0.5× 422 4.2× 42 571

Countries citing papers authored by Zeheng Wang

Since Specialization
Citations

This map shows the geographic impact of Zeheng Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zeheng Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zeheng Wang more than expected).

Fields of papers citing papers by Zeheng Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zeheng Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zeheng Wang. The network helps show where Zeheng Wang may publish in the future.

Co-authorship network of co-authors of Zeheng Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Zeheng Wang. A scholar is included among the top collaborators of Zeheng Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zeheng Wang. Zeheng Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Wang, Zeheng, et al.. (2025). Self‐Adaptive Quantum Kernel Principal Component Analysis for Compact Readout of Chemiresistive Sensor Arrays. Advanced Science. 12(15). e2411573–e2411573. 2 indexed citations
3.
Wu, Ao, et al.. (2024). A fast-switching and short-circuit enhanced SOI LIGBT with a Self-Driving P-MOS. Microelectronics Journal. 154. 106447–106447. 2 indexed citations
4.
Wang, Fangzhou, Chang Gao, Xiaohui Wang, et al.. (2024). Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT. Science China Information Sciences. 68(1).
5.
6.
Wang, Zeheng, et al.. (2024). Blue and Green-Mode Energy-Efficient Nanoparticle-Based Chemiresistive Sensor Array Realized by Rapid Ensemble Learning. ACS Applied Nano Materials. 7(21). 24437–24446. 2 indexed citations
7.
Wang, Zeheng, et al.. (2024). Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications. Micromachines. 15(3). 330–330. 17 indexed citations
8.
Wang, Fangzhou, Wanjun Chen, Yang Wang, et al.. (2023). Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT. IEEE Transactions on Electron Devices. 71(3). 1654–1661. 3 indexed citations
9.
Wang, Zeheng, MengKe Feng, W. Gilbert, et al.. (2023). Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry. Advanced Materials. 35(19). e2208557–e2208557. 9 indexed citations
10.
Wang, Zeheng, MengKe Feng, W. Gilbert, et al.. (2023). Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry (Adv. Mater. 19/2023). Advanced Materials. 35(19). 1 indexed citations
11.
Wang, Fangzhou, Wanjun Chen, Zeheng Wang, et al.. (2021). A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology. Semiconductor Science and Technology. 36(3). 34004–34004. 4 indexed citations
12.
Wang, Zeheng, Liang Li, Miao Song, et al.. (2021). Evaluating the Traditional Chinese Medicine (TCM) Officially Recommended in China for COVID-19 Using Ontology-Based Side-Effect Prediction Framework (OSPF) and Deep Learning. Journal of Ethnopharmacology. 272. 113957–113957. 49 indexed citations
13.
Wang, Fangzhou, Wanjun Chen, Ruize Sun, et al.. (2020). An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps. Journal of Physics D Applied Physics. 54(9). 95107–95107. 18 indexed citations
14.
Wang, Fangzhou, Wanjun Chen, Xiaorui Xu, et al.. (2020). Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism. IEEE Transactions on Electron Devices. 68(1). 175–183. 23 indexed citations
15.
Wang, Fangzhou, Wanjun Chen, Xuan Li, et al.. (2020). Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors. Journal of Physics D Applied Physics. 53(30). 305106–305106. 19 indexed citations
16.
Wang, Zeheng, et al.. (2020). Approaching ultra-low turn-on voltage in GaN lateral diode. Semiconductor Science and Technology. 36(1). 14003–14003. 9 indexed citations
17.
Wang, Zeheng, et al.. (2019). Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench. Applied Sciences. 9(15). 3054–3054. 18 indexed citations
18.
Wang, Zeheng, Jun Cao, Fangzhou Wang, et al.. (2018). Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate. Superlattices and Microstructures. 122. 343–348. 18 indexed citations
19.
Wang, Zeheng, et al.. (2017). Simulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode. Micro & Nano Letters. 12(9). 660–663. 11 indexed citations
20.
Zhou, Qi, Yuanyuan Shi, Zeheng Wang, et al.. (2016). 0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate. 1041–1043. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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