Yun Xia

559 total citations
38 papers, 423 citations indexed

About

Yun Xia is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yun Xia has authored 38 papers receiving a total of 423 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 17 papers in Condensed Matter Physics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yun Xia's work include Silicon Carbide Semiconductor Technologies (22 papers), GaN-based semiconductor devices and materials (16 papers) and Ga2O3 and related materials (9 papers). Yun Xia is often cited by papers focused on Silicon Carbide Semiconductor Technologies (22 papers), GaN-based semiconductor devices and materials (16 papers) and Ga2O3 and related materials (9 papers). Yun Xia collaborates with scholars based in China. Yun Xia's co-authors include Wanjun Chen, Bo Zhang, Nan Jiang, Kefeng Shang, Yan Wu, Ruize Sun, Chao Liu, Fangzhou Wang, Qi Zhou and Zhaoji Li and has published in prestigious journals such as International Journal of Hydrogen Energy, IEEE Transactions on Industry Applications and Journal of Physics D Applied Physics.

In The Last Decade

Yun Xia

35 papers receiving 408 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yun Xia China 12 255 147 120 88 64 38 423
Gang Lyu China 12 575 2.3× 261 1.8× 59 0.5× 3 0.0× 74 1.2× 63 646
Hari Mohan India 13 219 0.9× 26 0.2× 382 3.2× 6 0.1× 157 2.5× 22 531
Preeti Gupta India 12 217 0.9× 31 0.2× 157 1.3× 3 0.0× 21 0.3× 43 377
Yuma Iwasaki Japan 10 101 0.4× 36 0.2× 306 2.5× 5 0.1× 73 1.1× 30 440
Minghua Wang China 10 308 1.2× 8 0.1× 61 0.5× 7 0.1× 33 0.5× 62 398
Fen Guo China 9 89 0.3× 43 0.3× 103 0.9× 8 0.1× 63 1.0× 28 310
T.V. Christiaanse Canada 14 57 0.2× 90 0.6× 246 2.0× 14 0.2× 358 5.6× 26 491
Ling Xia China 9 260 1.0× 148 1.0× 41 0.3× 8 0.1× 64 1.0× 32 337
Yuanzhang Su China 10 94 0.4× 13 0.1× 81 0.7× 10 0.1× 88 1.4× 23 284
Nirmana Perera Switzerland 12 447 1.8× 178 1.2× 44 0.4× 9 0.1× 40 0.6× 39 507

Countries citing papers authored by Yun Xia

Since Specialization
Citations

This map shows the geographic impact of Yun Xia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yun Xia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yun Xia more than expected).

Fields of papers citing papers by Yun Xia

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yun Xia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yun Xia. The network helps show where Yun Xia may publish in the future.

Co-authorship network of co-authors of Yun Xia

This figure shows the co-authorship network connecting the top 25 collaborators of Yun Xia. A scholar is included among the top collaborators of Yun Xia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yun Xia. Yun Xia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Wang, Xiaoming, Wanjun Chen, Ruize Sun, et al.. (2023). Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress. IEEE Transactions on Electron Devices. 71(3). 1694–1701. 5 indexed citations
4.
Liu, Chao, Shu-yi Zhang, Wanjun Chen, et al.. (2023). Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition. IEEE Transactions on Electron Devices. 70(2). 640–646. 6 indexed citations
5.
Xia, Yun, et al.. (2023). Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction. IEEE Transactions on Electron Devices. 70(3). 1211–1218. 4 indexed citations
6.
Chen, Wanjun, Ruize Sun, Chao Liu, et al.. (2022). Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress. IEEE Transactions on Electron Devices. 69(10). 5733–5741. 8 indexed citations
7.
Xia, Yun, Wanjun Chen, Chao Liu, et al.. (2022). An Ultralow Loss Reverse-Conducting LIGBT With Embedded P-P-N Diode in Oxide Trench. IEEE Transactions on Electron Devices. 69(12). 6956–6962. 4 indexed citations
8.
Chen, Wanjun, Ruize Sun, Chao Liu, et al.. (2022). Optimizing breakdown voltage and on-state resistance by modulating the barrier height along 2DEG channel for power p-GaN HEMTs. Semiconductor Science and Technology. 37(12). 125004–125004. 1 indexed citations
9.
Xia, Yun, et al.. (2021). A High Voltage Superjunction MOSFET with Enhanced Reverse Recovery Performance. 1–3. 3 indexed citations
10.
Chen, Wanjun, Qijun Zhou, Yun Xia, et al.. (2020). Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition. IEEE Transactions on Device and Materials Reliability. 20(1). 214–220. 4 indexed citations
11.
Wang, Fangzhou, Wanjun Chen, Xiaorui Xu, et al.. (2020). Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism. IEEE Transactions on Electron Devices. 68(1). 175–183. 23 indexed citations
12.
Wang, Fangzhou, Wanjun Chen, Xuan Li, et al.. (2020). Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors. Journal of Physics D Applied Physics. 53(30). 305106–305106. 19 indexed citations
13.
Sun, Ruize, Kenan Zhang, Wanjun Chen, et al.. (2020). 10-kV 4H-SiC Drift Step Recovery Diodes (DSRDs) for Compact High-repetition Rate Nanosecond HV Pulse Generator. 62–65. 10 indexed citations
14.
Chen, Wanjun, Ruize Sun, Chao Liu, et al.. (2020). Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs. 317–320. 23 indexed citations
15.
Chen, Wanjun, Ruize Sun, Chao Liu, et al.. (2019). Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(3). 1485–1495. 30 indexed citations
16.
Liu, Chao, Wanjun Chen, Hong Tao, et al.. (2019). A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-<italic>di/dt</italic> Characteristics. IEEE Transactions on Electron Devices. 66(2). 1018–1025. 14 indexed citations
17.
Jiang, Nan, Bangfa Peng, Yun Xia, et al.. (2019). DC discharge with high secondary electron emission oxide cathode: Effects of gas pressure and oxide cathode structure. Vacuum. 166. 114–122. 5 indexed citations
18.
Chen, Wanjun, Chao Liu, Yun Xia, et al.. (2018). Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent. IEEE Transactions on Electron Devices. 65(12). 5322–5328. 24 indexed citations
19.
Chen, Wanjun, Zhaoji Li, Bo Zhang, et al.. (2018). Evaluation of CS-MCT in DC Solid-State Circuit Breaker Applications. IEEE Transactions on Industry Applications. 54(5). 5465–5473. 19 indexed citations
20.
Lu, Na, D.L. Sun, Yun Xia, et al.. (2018). Dry reforming of CH4CO2 in AC rotating gliding arc discharge: Effect of electrode structure and gas parameters. International Journal of Hydrogen Energy. 43(29). 13098–13109. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026