Cliff Drowley

478 total citations
14 papers, 400 citations indexed

About

Cliff Drowley is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Cliff Drowley has authored 14 papers receiving a total of 400 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 12 papers in Condensed Matter Physics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Cliff Drowley's work include Silicon Carbide Semiconductor Technologies (12 papers), GaN-based semiconductor devices and materials (12 papers) and Ga2O3 and related materials (6 papers). Cliff Drowley is often cited by papers focused on Silicon Carbide Semiconductor Technologies (12 papers), GaN-based semiconductor devices and materials (12 papers) and Ga2O3 and related materials (6 papers). Cliff Drowley collaborates with scholars based in United States and China. Cliff Drowley's co-authors include Subhash Pidaparthi, Andrew Edwards, Yuhao Zhang, Ruizhe Zhang, Jingcun Liu, Hao Cui, Ming Xiao, Yuxin Zhang, Michael D. Craven and Wolfgang Meier and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Cliff Drowley

14 papers receiving 387 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Cliff Drowley United States	11	340	312	155	41	37	14	400
Fangzhou Wang China	13	320 0.9×	298 1.0×	137 0.9×	54 1.3×	77 2.1×	49	399
Stefan Moench Germany	12	292 0.9×	266 0.9×	65 0.4×	40 1.0×	35 0.9×	38	347
Alaleh Tajalli Italy	11	378 1.1×	429 1.4×	186 1.2×	79 1.9×	70 1.9×	17	469
F. Bauwens Belgium	14	714 2.1×	268 0.9×	55 0.4×	16 0.4×	45 1.2×	48	734
Gourab Dutta India	9	240 0.7×	265 0.8×	155 1.0×	82 2.0×	76 2.1×	28	331
P. Murugapandiyan India	12	284 0.8×	254 0.8×	121 0.8×	84 2.0×	67 1.8×	40	379
Andreas Wentzel Germany	12	503 1.5×	277 0.9×	111 0.7×	34 0.8×	59 1.6×	65	559
Yorito Kakiuchi Japan	6	405 1.2×	432 1.4×	182 1.2×	54 1.3×	82 2.2×	10	471
N. Tipirneni United States	8	312 0.9×	312 1.0×	122 0.8×	46 1.1×	46 1.2×	16	365
J. L. Garrett United States	7	237 0.7×	190 0.6×	244 1.6×	191 4.7×	40 1.1×	18	487

Countries citing papers authored by Cliff Drowley

Since Specialization

Citations

This map shows the geographic impact of Cliff Drowley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cliff Drowley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cliff Drowley more than expected).

Fields of papers citing papers by Cliff Drowley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Cliff Drowley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cliff Drowley. The network helps show where Cliff Drowley may publish in the future.

Co-authorship network of co-authors of Cliff Drowley

This figure shows the co-authorship network connecting the top 25 collaborators of Cliff Drowley. A scholar is included among the top collaborators of Cliff Drowley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Cliff Drowley. Cliff Drowley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Yang, Xin, Qihao Song, Ruizhe Zhang, et al.. (2024). Evaluation of Dynamic R_ON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs. The HKU Scholars Hub (University of Hong Kong). 283–286. 11 indexed citations

Yang, Xin, Ruizhe Zhang, Qihao Song, et al.. (2024). Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET. IEEE Transactions on Power Electronics. 39(12). 15720–15731. 12 indexed citations

Yang, Xin, Ruizhe Zhang, Bixuan Wang, et al.. (2023). Dynamic R _ON Free 1.2-kV Vertical GaN JFET. IEEE Transactions on Electron Devices. 71(1). 720–726. 20 indexed citations

Edwards, Andrew, Cliff Drowley, Subhash Pidaparthi, et al.. (2023). Switching of a Bus Voltage of 1400 V at 10 MHz Using Vertical GaN Fin-JFETs. 235–237. 1 indexed citations

Zhang, R., Qian Yang, Yuxin Zhang, et al.. (2023). Switching Performance Evaluation of 650 V Vertical GaN Fin JFET. The HKU Scholars Hub (University of Hong Kong). 2515–2519. 8 indexed citations

Zhang, R., et al.. (2022). Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage. The HKU Scholars Hub (University of Hong Kong). 4. 1–8. 11 indexed citations

Zhang, R., et al.. (2022). Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage. The HKU Scholars Hub (University of Hong Kong). 205–208. 7 indexed citations

Zhang, Ruizhe, Jingcun Liu, Qiang Li, et al.. (2022). Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode. IEEE Electron Device Letters. 43(3). 366–369. 21 indexed citations

Liu, Jingcun, Ruizhe Zhang, Ming Xiao, et al.. (2021). Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes. IEEE Transactions on Power Electronics. 36(10). 10959–10964. 53 indexed citations

10.

Liu, Jingcun, Ruizhe Zhang, Ming Xiao, et al.. (2021). Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design. IEEE Transactions on Power Electronics. 37(5). 5433–5443. 20 indexed citations

11.

Zhang, Ruizhe, Jingcun Liu, Qiang Li, et al.. (2021). Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET. IEEE Transactions on Power Electronics. 37(6). 6253–6258. 27 indexed citations

12.

Liu, Jingcun, Ming Xiao, Ruizhe Zhang, et al.. (2021). 1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability. IEEE Transactions on Electron Devices. 68(4). 2025–2032. 90 indexed citations

13.

Xiao, Ming, Yuxin Zhang, Subhash Pidaparthi, et al.. (2020). 1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities. The HKU Scholars Hub (University of Hong Kong). 23.2.1–23.2.4. 68 indexed citations

14.

Liu, Jingcun, Ming Xiao, Ruizhe Zhang, et al.. (2020). Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes. IEEE Electron Device Letters. 41(9). 1328–1331. 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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