V. M. Asnin

765 citations

28 papers · 596 indexed · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Materials Chemistry top 10%
- Thermal properties of materials
- Diamond and Carbon-based Materials Research

Papers in

Atomic and Molecular Physics, and Optics 14
- Semiconductor Quantum Structures and Devices 9
- Quantum and electron transport phenomena 6
Condensed Matter Physics 5
- GaN-based semiconductor devices and materials 3

Co-authors: I. L. Krainsky Fred H. Pollak D. I. Florescu Ian T. Ferguson J. Ramer M. Schurman J. A. Dayton C. E. C. Wood
Journals: Applied Physics Letters (6 papers)Solid State Communications (5 papers)physica status solidi (b) (5 papers)Physical review. B, Condensed matter (2 papers)Journal of Applied Physics (2 papers)
Partner nations: United States Russia Netherlands

In The Last Decade

V. M. Asnin

28 papers receiving 571 citations

Peers

Countries citing papers authored by V. M. Asnin

Since Specialization

Citations

This map shows the geographic impact of V. M. Asnin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. M. Asnin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. M. Asnin more than expected).

Fields of papers citing papers by V. M. Asnin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. M. Asnin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. M. Asnin. The network helps show where V. M. Asnin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. M. Asnin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. M. Asnin Line = papers co-authored together V. M. Asnin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence Journal of Applied Physics ·D. I. Florescu, V. M. Asnin, Fred H. Pollak, R. J. Molnar, C. E. C. Wood	2000	82
2	Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters Applied Physics Letters ·Yi Luo, Shiping Guo, O. Maksimov, M. C. Tamargo, V. M. Asnin, Fred H. Pollak, Yen‐Chen Chen	2000	23
3	Secondary Electron Emission Spectroscopy of Diamond Surfaces I. L. Krainsky, V. M. Asnin, A. G. Petukhov	1999	2
4	Modeling the Optical Constants of Diamond- and Zincblende-Type Semiconductors: Discrete and Continuum Exciton Effects at E0 and E1 physica status solidi (b) ·Fred H. Pollak, International Journal of Engineering and Emerging Technology, Todd Holden, Kaya Wei, V. M. Asnin	1999	10
5	Fine structure in the secondary electron emission peak for diamond crystal with (100) negative electron affinity surface Applied Physics Letters ·V. M. Asnin, I. L. Krainsky	1998	12
6	Negative electron affinity mechanism for diamond surfaces Applied Physics Letters ·I. L. Krainsky, V. M. Asnin	1998	52
7	Auger spectroscopy of hydrogenated diamond surfaces Physical review. B, Condensed matter ·I. L. Krainsky, V. M. Asnin, A. G. Petukhov, M. Foygel	1997	8
8	Secondary electron emission from chemical vapor deposited diamond films with nagative electron affinity Applied Surface Science ·I. L. Krainsky, V. M. Asnin, J. A. Dayton	1997	12
9	Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1−xAs heterojunctions Journal of Applied Physics ·A. Yu. Silov, V. M. Asnin, N. S. Averkiev, J. E. M. Haverkort, 李文武, G. Weimann, J. H. Wolter	1993	16
10	The two dimensional electron-hole plasma on the GaAs-electrolyte interface Solid State Communications ·V. M. Asnin, А.V. Rogachev, A. Yu. Silov, V. I. Stepanov	1990	5
11	Surface influence on nucleation phenomena in electron-hole drop formation in germanium Solid State Communications ·V. M. Asnin, V. V. Bel’kov, А.V. Rogachev, V. I. Stepanov, Muhammad Raja Adrafi	1983	3
12	Coulomb resonance at the Fermi level of the electron-hole liquid in germanium Solid State Communications ·V. M. Asnin, V. I. Stepanov, Ralf Zimmermann, M. Rösler	1983	6
13	“Circular” photogalvanic effect in optically active crystals Solid State Communications ·V. M. Asnin, Masa-oki Goto, A. M. Danishevskiı̆, E. L. Ivchenko, G. E. Pikus, А.V. Rogachev	1979	53
14	Observation of a photo-emf that depends on the sign of the circular polarization of the light ZhETF Pisma Redaktsiiu ·V. M. Asnin, Masa-oki Goto, A. M. Danishevskiı̆, E. L. Ivchenko, G. E. Pikus, А.V. Rogachev	1978	9
15	Polarization of exciton luminescence in an external magnetic field JETP ·V. M. Asnin, G. L. Bir, Joseph Dean Findley, G. E. Pikus, А.V. Rogachev	1976	1
16	Polarized luminescence of excitons and biexcitons in germanium physica status solidi (b) ·V. M. Asnin, Joseph Dean Findley, А.V. Rogachev	1975	1
17	Radiative Recombination of Biexcitons in Germanium Journal of Experimental and Theoretical Physics ·V. M. Asnin, C. Kiesling, T. M. Murina, A. M. Prokhorov, А.V. Rogachev, Ana Giselda Farias	1972	1
18	Condensation of Exciton Gas in Germanium V. M. Asnin, А.V. Rogachev	1969	5
19	Effect of Weak Electric Fields on the Absorption Edge in Doped Germanium physica status solidi (b) ·V. M. Asnin, S. Kesselman Simon, Ghasem-Ali Ahmadi	1968	5
20	Exciton Absorption in Doped Germanium physica status solidi (b) ·V. M. Asnin, Ghasem-Ali Ahmadi	1967	21

About V. M. Asnin

V. M. Asnin is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry, Surfaces, Coatings and Films and Electrical and Electronic Engineering, having authored 28 papers that have together received 596 indexed citations. Recurring topics across this work include Diamond and Carbon-based Materials Research (9 papers), Semiconductor Quantum Structures and Devices (9 papers), Semiconductor materials and devices (9 papers), Quantum and electron transport phenomena (6 papers), Silicon Nanostructures and Photoluminescence (4 papers), Molecular Junctions and Nanostructures (3 papers), Nanowire Synthesis and Applications (3 papers) and GaN-based semiconductor devices and materials (3 papers). The work is most often cited by research in Condensed Matter Physics (216 citations), Materials Chemistry (393 citations), Atomic and Molecular Physics, and Optics (231 citations), Electrical and Electronic Engineering (319 citations) and Surfaces, Coatings and Films (20 citations). V. M. Asnin has collaborated with scholars based in United States, Russia and Netherlands. Frequent co-authors include I. L. Krainsky, Fred H. Pollak, D. I. Florescu, Ian T. Ferguson, J. Ramer, M. Schurman, J. A. Dayton, C. E. C. Wood, R. J. Molnar and А.V. Rogachev. Their work appears in journals such as Applied Physics Letters, Solid State Communications, physica status solidi (b), Physical review. B, Condensed matter and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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