D. Delagebeaudeuf

1.1k total citations · 1 hit paper
21 papers, 753 citations indexed

About

D. Delagebeaudeuf is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. Delagebeaudeuf has authored 21 papers receiving a total of 753 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in D. Delagebeaudeuf's work include Semiconductor Quantum Structures and Devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Semiconductor materials and devices (7 papers). D. Delagebeaudeuf is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Semiconductor materials and devices (7 papers). D. Delagebeaudeuf collaborates with scholars based in France, United Kingdom and Canada. D. Delagebeaudeuf's co-authors include Nuyen T. Linh, P. Delescluse, M. Laviron, J. Chaplart, P. Étienne, Joël Chevrier, Pascal Urien, J. Massies, M. N. Charasse and Bruno Gérard and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and IEEE Transactions on Electron Devices.

In The Last Decade

D. Delagebeaudeuf

20 papers receiving 671 citations

Hit Papers

Metal-(n) AlGaAs-GaAs two... 1982 2026 1996 2011 1982 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
    1982 443 citations D. Delagebeaudeuf, Nuyen T. Linh IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Delagebeaudeuf France 12 659 508 190 83 67 21 753
M. Laviron France 12 423 0.6× 427 0.8× 129 0.7× 88 1.1× 21 0.3× 22 554
P. A. Houston United Kingdom 10 370 0.6× 198 0.4× 256 1.3× 64 0.8× 120 1.8× 25 448
J. Singh United States 9 286 0.4× 417 0.8× 167 0.9× 89 1.1× 22 0.3× 16 505
J. Kolník United States 9 549 0.8× 378 0.7× 592 3.1× 103 1.2× 223 3.3× 26 769
O. Imafuji Japan 12 306 0.5× 277 0.5× 262 1.4× 116 1.4× 76 1.1× 35 455
K. Kasahara Japan 14 493 0.7× 241 0.5× 236 1.2× 31 0.4× 79 1.2× 31 546
D.G. Hayes United Kingdom 14 670 1.0× 476 0.9× 249 1.3× 99 1.2× 38 0.6× 48 804
M. Takikawa Japan 17 655 1.0× 514 1.0× 226 1.2× 150 1.8× 79 1.2× 52 819
H.Q. Tserng United States 15 701 1.1× 320 0.6× 340 1.8× 40 0.5× 79 1.2× 89 760
Akihiro Moto Japan 13 274 0.4× 253 0.5× 220 1.2× 75 0.9× 70 1.0× 37 406

Countries citing papers authored by D. Delagebeaudeuf

Since Specialization
Citations

This map shows the geographic impact of D. Delagebeaudeuf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Delagebeaudeuf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Delagebeaudeuf more than expected).

Fields of papers citing papers by D. Delagebeaudeuf

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Delagebeaudeuf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Delagebeaudeuf. The network helps show where D. Delagebeaudeuf may publish in the future.

Co-authorship network of co-authors of D. Delagebeaudeuf

This figure shows the co-authorship network connecting the top 25 collaborators of D. Delagebeaudeuf. A scholar is included among the top collaborators of D. Delagebeaudeuf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Delagebeaudeuf. D. Delagebeaudeuf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Charasse, M. N., B. Bartenlian, Bruno Gérard, et al.. (1989). 12 GHz High Power GaAs/Si MESFETs. Japanese Journal of Applied Physics. 28(11A). L1896–L1896. 12 indexed citations
2.
Delagebeaudeuf, D., et al.. (1986). Design of TEGFET devices for optimum low-noise high-frequency operation. IEEE Transactions on Electron Devices. 33(5). 590–594. 11 indexed citations
3.
Delagebeaudeuf, D., et al.. (1985). Extremely Low Noise and Low Temperature TEGFET Operation. 38. 260–263. 5 indexed citations
4.
Laviron, M., et al.. (1985). Ultra low noise and high frequency operation of TEGFETS made by MBE. Physica B+C. 129(1-3). 376–379. 3 indexed citations
5.
Delagebeaudeuf, D., Joël Chevrier, M. Laviron, & P. Delescluse. (1985). A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors. IEEE Electron Device Letters. 6(9). 444–445. 21 indexed citations
6.
Laviron, M., et al.. (1984). IIIA-1 Ultralow-noise and high-frequency operation of TEGFET's made by molecular-beam epitaxy. IEEE Transactions on Electron Devices. 31(12). 1967–1967. 3 indexed citations
7.
Urien, Pascal & D. Delagebeaudeuf. (1983). New method for determining the series resistances in a MESFET or TEGFET. Electronics Letters. 19(17). 702–703. 9 indexed citations
8.
Delagebeaudeuf, D., et al.. (1982). Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential. Electronics Letters. 18(2). 103–105. 14 indexed citations
9.
Laviron, M., D. Delagebeaudeuf, P. Delescluse, et al.. (1982). Low noise normally on and normally off two-dimensional electron gas field-effect transistors. Applied Physics Letters. 40(6). 530–532. 19 indexed citations
10.
Delescluse, P., et al.. (1982). High-speed low-power DCFL using planar two-dimensional electron gas FET technology. Electronics Letters. 18(12). 517–519. 23 indexed citations
11.
Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1982). Tunnelling through GaAs-Al x Ga 1− x As-GaAs double heterojunctions. Electronics Letters. 18(2). 85–87. 23 indexed citations
12.
Delagebeaudeuf, D. & Nuyen T. Linh. (1982). Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET. IEEE Transactions on Electron Devices. 29(6). 955–960. 443 indexed citations breakdown →
13.
Delagebeaudeuf, D., et al.. (1982). High-speed two-dimensional electron-gas FET logic. Electronics Letters. 18(3). 109–110. 11 indexed citations
14.
Delagebeaudeuf, D. & Nuyen T. Linh. (1982). Speed power in planar two-dimensional electron gas FET DCFL circuit: a theoretical approach. Electronics Letters. 18(12). 510–512. 5 indexed citations
15.
Delescluse, P., M. Laviron, J. Chaplart, D. Delagebeaudeuf, & Nuyen T. Linh. (1981). Transport properties in GaAs-Al x Ga 1− x As heterostructures and MESFET application. Electronics Letters. 17(10). 342–344. 29 indexed citations
16.
Delagebeaudeuf, D. & Nuyen T. Linh. (1981). Charge control of the heterojunction two-dimensional electron gas for MESFET application. IEEE Transactions on Electron Devices. 28(7). 790–795. 28 indexed citations
17.
Laviron, M., D. Delagebeaudeuf, P. Delescluse, J. Chaplart, & Nuyen T. Linh. (1981). Low-noise two-dimensional electron gas FET. Electronics Letters. 17(15). 536–537. 16 indexed citations
18.
Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1980). Two-dimensional electron gas m.e.s.f.e.t. structure. Electronics Letters. 16(17). 667–668. 73 indexed citations
19.
Delagebeaudeuf, D.. (1974). Low-voltage punchthrough injection structure. Electronics Letters. 10(10). 166–167. 2 indexed citations
20.
Delagebeaudeuf, D.. (1970). Experimental verification of approximate large-signal theory of IMPATT diodes. Proceedings of the IEEE. 58(7). 1140–1141. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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