M. Laviron

785 total citations
22 papers, 554 citations indexed

About

M. Laviron is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Laviron has authored 22 papers receiving a total of 554 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in M. Laviron's work include Semiconductor Quantum Structures and Devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Quantum and electron transport phenomena (10 papers). M. Laviron is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Quantum and electron transport phenomena (10 papers). M. Laviron collaborates with scholars based in France, United Kingdom and United States. M. Laviron's co-authors include P. Delescluse, J. Chaplart, Nuyen T. Linh, D. Delagebeaudeuf, Randal K. Goodall, R. J. Higgins, J.P. Harrang, P. Étienne, J. Massies and Joël Chevrier and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

M. Laviron

22 papers receiving 486 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Laviron France 12 427 423 129 88 25 22 554
H. Shen United States 12 552 1.3× 499 1.2× 93 0.7× 110 1.3× 53 2.1× 22 624
K. Y. Cheng United States 10 343 0.8× 244 0.6× 95 0.7× 58 0.7× 20 0.8× 21 394
P. M. Mensz United States 11 402 0.9× 407 1.0× 96 0.7× 153 1.7× 29 1.2× 24 501
J. Singh United States 9 417 1.0× 286 0.7× 167 1.3× 89 1.0× 34 1.4× 16 505
D. Delagebeaudeuf France 12 508 1.2× 659 1.6× 190 1.5× 83 0.9× 47 1.9× 21 753
H. Thomas United Kingdom 12 275 0.6× 358 0.8× 96 0.7× 65 0.7× 32 1.3× 46 411
D.C. Radulescu United States 12 315 0.7× 347 0.8× 62 0.5× 48 0.5× 31 1.2× 23 395
F.A.P. Blom Netherlands 15 490 1.1× 310 0.7× 72 0.6× 129 1.5× 21 0.8× 35 537
A. P. Silin Russia 11 256 0.6× 147 0.3× 60 0.5× 149 1.7× 34 1.4× 34 373
M. Fukuta Japan 12 203 0.5× 441 1.0× 91 0.7× 59 0.7× 20 0.8× 40 464

Countries citing papers authored by M. Laviron

Since Specialization
Citations

This map shows the geographic impact of M. Laviron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Laviron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Laviron more than expected).

Fields of papers citing papers by M. Laviron

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Laviron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Laviron. The network helps show where M. Laviron may publish in the future.

Co-authorship network of co-authors of M. Laviron

This figure shows the co-authorship network connecting the top 25 collaborators of M. Laviron. A scholar is included among the top collaborators of M. Laviron based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Laviron. M. Laviron is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Charasse, M. N., B. Bartenlian, Bruno Gérard, et al.. (1989). 12 GHz High Power GaAs/Si MESFETs. Japanese Journal of Applied Physics. 28(11A). L1896–L1896. 12 indexed citations
2.
Charasse, M. N., A. Georgakilas, E. Barbier, et al.. (1988). MBE growth of GaAs on Si at Thomson. 2 indexed citations
3.
Portal, J.C., R. J. Nicholas, M.A. Brummell, et al.. (1986). A study of n-type GaxIn1-xAsyP1-y-InP quantum wells. Semiconductor Science and Technology. 1(1). 3–6. 1 indexed citations
4.
Dmowski, L., J.C. Portal, Manijeh Razeghi, et al.. (1986). The effect of hydrostatic pressure on a Ga0.47In0.53As/InP heterojunction with three electric sub-bands. Semiconductor Science and Technology. 1(2). 105–109. 5 indexed citations
5.
Harrang, J.P., et al.. (1985). Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction. Physical review. B, Condensed matter. 32(12). 8126–8135. 173 indexed citations
6.
Laviron, M., et al.. (1985). Ultra low noise and high frequency operation of TEGFETS made by MBE. Physica B+C. 129(1-3). 376–379. 3 indexed citations
7.
Delagebeaudeuf, D., Joël Chevrier, M. Laviron, & P. Delescluse. (1985). A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors. IEEE Electron Device Letters. 6(9). 444–445. 21 indexed citations
8.
Laviron, M., et al.. (1984). IIIA-1 Ultralow-noise and high-frequency operation of TEGFET's made by molecular-beam epitaxy. IEEE Transactions on Electron Devices. 31(12). 1967–1967. 3 indexed citations
9.
Laviron, M., et al.. (1983). One and two-dimensional quantum localization in GaAs wires of rectangular cross-sections. Journal de Physique Lettres. 44(24). 1021–1026. 10 indexed citations
10.
Laviron, M., D. Delagebeaudeuf, P. Delescluse, et al.. (1982). Low noise normally on and normally off two-dimensional electron gas field-effect transistors. Applied Physics Letters. 40(6). 530–532. 19 indexed citations
11.
Delagebeaudeuf, D., et al.. (1982). Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential. Electronics Letters. 18(2). 103–105. 14 indexed citations
12.
13.
Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1982). Tunnelling through GaAs-Al x Ga 1− x As-GaAs double heterojunctions. Electronics Letters. 18(2). 85–87. 23 indexed citations
14.
Delescluse, P., et al.. (1982). High-speed low-power DCFL using planar two-dimensional electron gas FET technology. Electronics Letters. 18(12). 517–519. 23 indexed citations
15.
Delagebeaudeuf, D., et al.. (1982). High-speed two-dimensional electron-gas FET logic. Electronics Letters. 18(3). 109–110. 11 indexed citations
16.
Delescluse, P., M. Laviron, J. Chaplart, D. Delagebeaudeuf, & Nuyen T. Linh. (1981). Transport properties in GaAs-Al x Ga 1− x As heterostructures and MESFET application. Electronics Letters. 17(10). 342–344. 29 indexed citations
17.
Laviron, M., D. Delagebeaudeuf, P. Delescluse, J. Chaplart, & Nuyen T. Linh. (1981). Low-noise two-dimensional electron gas FET. Electronics Letters. 17(15). 536–537. 16 indexed citations
18.
Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1980). Two-dimensional electron gas m.e.s.f.e.t. structure. Electronics Letters. 16(17). 667–668. 73 indexed citations
19.
Laviron, M., et al.. (1979). X- and Ku-band internally matched packaged GaAs f.e.t.. Electronics Letters. 15(1). 8–9. 3 indexed citations
20.
Laviron, M., et al.. (1975). An adequate structure for power microwave FETs. 66–67. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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