J. Chaplart

436 total citations
11 papers, 292 citations indexed

About

J. Chaplart is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, J. Chaplart has authored 11 papers receiving a total of 292 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Atomic and Molecular Physics, and Optics, 9 papers in Electrical and Electronic Engineering and 1 paper in Condensed Matter Physics. Recurrent topics in J. Chaplart's work include Semiconductor Quantum Structures and Devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Quantum and electron transport phenomena (5 papers). J. Chaplart is often cited by papers focused on Semiconductor Quantum Structures and Devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Quantum and electron transport phenomena (5 papers). J. Chaplart collaborates with scholars based in France. J. Chaplart's co-authors include Nuyen T. Linh, M. Laviron, P. Delescluse, D. Delagebeaudeuf, J. Massies and P. Étienne and has published in prestigious journals such as Applied Physics Letters, Solid State Communications and Electronics Letters.

In The Last Decade

J. Chaplart

11 papers receiving 238 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Chaplart France 11 249 240 42 36 21 11 292
Russ Fischer United States 5 398 1.6× 410 1.7× 86 2.0× 46 1.3× 16 0.8× 5 485
Y. Ashizawa Japan 9 275 1.1× 282 1.2× 46 1.1× 33 0.9× 11 0.5× 22 321
T. Sonoda Japan 10 296 1.2× 208 0.9× 45 1.1× 40 1.1× 12 0.6× 43 318
A.W. Nelson United Kingdom 14 399 1.6× 328 1.4× 24 0.6× 56 1.6× 21 1.0× 32 443
J.C. Bouley France 11 345 1.4× 248 1.0× 33 0.8× 71 2.0× 9 0.4× 29 368
H. D. Law United States 12 353 1.4× 316 1.3× 17 0.4× 39 1.1× 13 0.6× 24 392
T.E. Sale United Kingdom 14 441 1.8× 384 1.6× 59 1.4× 39 1.1× 11 0.5× 57 485
R.J. Capik United States 11 362 1.5× 274 1.1× 14 0.3× 38 1.1× 22 1.0× 24 412
L. Buydens Belgium 12 279 1.1× 196 0.8× 41 1.0× 36 1.0× 16 0.8× 31 308
L. Osterling United States 7 264 1.1× 270 1.1× 49 1.2× 52 1.4× 17 0.8× 8 330

Countries citing papers authored by J. Chaplart

Since Specialization
Citations

This map shows the geographic impact of J. Chaplart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Chaplart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Chaplart more than expected).

Fields of papers citing papers by J. Chaplart

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Chaplart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Chaplart. The network helps show where J. Chaplart may publish in the future.

Co-authorship network of co-authors of J. Chaplart

This figure shows the co-authorship network connecting the top 25 collaborators of J. Chaplart. A scholar is included among the top collaborators of J. Chaplart based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Chaplart. J. Chaplart is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

11 of 11 papers shown
1.
Chaplart, J., et al.. (1983). Reactive ion etching of GaAs using CCl2F2 and the effect of Ar addition. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(4). 1050–1052. 12 indexed citations
2.
Laviron, M., D. Delagebeaudeuf, P. Delescluse, et al.. (1982). Low noise normally on and normally off two-dimensional electron gas field-effect transistors. Applied Physics Letters. 40(6). 530–532. 19 indexed citations
3.
Delagebeaudeuf, D., et al.. (1982). Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential. Electronics Letters. 18(2). 103–105. 14 indexed citations
4.
Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1982). Tunnelling through GaAs-Al x Ga 1− x As-GaAs double heterojunctions. Electronics Letters. 18(2). 85–87. 23 indexed citations
5.
Delescluse, P., et al.. (1982). High-speed low-power DCFL using planar two-dimensional electron gas FET technology. Electronics Letters. 18(12). 517–519. 23 indexed citations
6.
Delagebeaudeuf, D., et al.. (1982). High-speed two-dimensional electron-gas FET logic. Electronics Letters. 18(3). 109–110. 11 indexed citations
7.
Delescluse, P., M. Laviron, J. Chaplart, D. Delagebeaudeuf, & Nuyen T. Linh. (1981). Transport properties in GaAs-Al x Ga 1− x As heterostructures and MESFET application. Electronics Letters. 17(10). 342–344. 29 indexed citations
8.
Laviron, M., D. Delagebeaudeuf, P. Delescluse, J. Chaplart, & Nuyen T. Linh. (1981). Low-noise two-dimensional electron gas FET. Electronics Letters. 17(15). 536–537. 16 indexed citations
9.
Massies, J., J. Chaplart, M. Laviron, & Nuyen T. Linh. (1981). Monocrystalline aluminium ohmic contact to n-GaAs by H2S adsorption. Applied Physics Letters. 38(9). 693–695. 52 indexed citations
10.
Delagebeaudeuf, D., P. Delescluse, P. Étienne, et al.. (1980). Two-dimensional electron gas m.e.s.f.e.t. structure. Electronics Letters. 16(17). 667–668. 73 indexed citations
11.
Massies, J., J. Chaplart, & Nuyen T. Linh. (1979). New results in the study of the aluminium epitaxial growth on gallium arsenide (001). Solid State Communications. 32(8). 707–709. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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