C. Rosenblad

644 total citations
24 papers, 532 citations indexed

About

C. Rosenblad is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C. Rosenblad has authored 24 papers receiving a total of 532 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in C. Rosenblad's work include Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). C. Rosenblad is often cited by papers focused on Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). C. Rosenblad collaborates with scholars based in Switzerland, Germany and Denmark. C. Rosenblad's co-authors include H. von Känel, Alex Dommann, E. Müller, Toby Meyer, Martin Kummer, G. Höck, G. Weyer, M. Fanciulli, H.-J. Herzog and U. König and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Applied Surface Science.

In The Last Decade

C. Rosenblad

24 papers receiving 519 citations

Peers

C. Rosenblad

EEE

AMPO

A. Steckenborn Germany

J. Kątcki Poland

Akira Obara Japan

Tokuzo Sukegawa Japan

Jorge Santiago United States

W.B. de Boer Netherlands

M. Koike Japan

K. Tone United States

S. Zerlauth Austria

S. Takamiya Japan

A. Steckenborn Germany

C. Rosenblad

374 ×0.9

EEE

331 ×1.1

AMPO

126 ×1.0

182 ×1.8

29 ×0.8

Citations per year, relative to C. Rosenblad C. Rosenblad (= 1×) peers A. Steckenborn

Countries citing papers authored by C. Rosenblad

Since Specialization

Citations

This map shows the geographic impact of C. Rosenblad's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Rosenblad with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Rosenblad more than expected).

Fields of papers citing papers by C. Rosenblad

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Rosenblad. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Rosenblad. The network helps show where C. Rosenblad may publish in the future.

Co-authorship network of co-authors of C. Rosenblad

This figure shows the co-authorship network connecting the top 25 collaborators of C. Rosenblad. A scholar is included among the top collaborators of C. Rosenblad based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Rosenblad. C. Rosenblad is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tsai, M.‐J., et al.. (2004). Optimal SiGe:C HBT module for BiCMOS applications. 113–116. 2 indexed citations

Thomas, Shawn, Robert E. Jones, R. Thomä, et al.. (2003). Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition. Journal of Electronic Materials. 32(9). 976–980. 33 indexed citations

Rosenblad, C., et al.. (2003). Production-ready dry cleaning and deposition processes for low-temperature Si and SiGe epitaxy. Applied Surface Science. 224(1-4). 36–40. 1 indexed citations

Jones, Robert E., Shawn Thomas, R. Thomä, et al.. (2003). Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD. 793–796. 10 indexed citations

Johansson, Ted, J. Wittborn, H. Norström, et al.. (2002). A Self-Aligned Double Poly-Si Process Utilizing Non-Selective Epitaxy of SiGe:C for Intrinsic Base and Poly-SiGe for Extrinsic Base. 105. 259–262. 1 indexed citations

Rosenblad, C., Thomas Graf, Alex Dommann, et al.. (2001). Low Energy Plasma Enhanced Chemical Vapour Deposition - Plasma Enhanced Deposition of Epitaxial Si and Sige. MRS Proceedings. 696. 1 indexed citations

Höck, G., E. Kohn, C. Rosenblad, et al.. (2000). High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition. Applied Physics Letters. 76(26). 3920–3922. 64 indexed citations

Rosenblad, C., Martin Kummer, Alex Dommann, et al.. (2000). Virtual substrates for the n- and p-type Si-MODFET grown at very high rates. Materials Science and Engineering B. 74(1-3). 113–117. 5 indexed citations

Känel, H. von, et al.. (2000). Fast Deposition Process for Graded SiGe Buffer Layers. Japanese Journal of Applied Physics. 39(4S). 2050–2050. 3 indexed citations

10.

Rosenblad, C., H. von Känel, Martin Kummer, Alex Dommann, & E. Müller. (2000). A plasma process for ultrafast deposition of SiGe graded buffer layers. Applied Physics Letters. 76(4). 427–429. 60 indexed citations

11.

Rosenblad, C., J. Stangl, E. Müller, G. Bauer, & H. von Känel. (2000). Strain relaxation of graded SiGe buffers grown at very high rates. Materials Science and Engineering B. 71(1-3). 20–23. 16 indexed citations

12.

Rosenblad, C., et al.. (1999). Influence of hydrogen desorption on the generation of defects in LEPECVD. Materials Science and Engineering B. 58(1-2). 76–80. 3 indexed citations

13.

Rosenblad, C., Thomas Graf, Alex Dommann, & H. von Känel. (1998). Low-Energy Plasma Enhanced Chemical Vapor Deposition. MRS Proceedings. 533. 3 indexed citations

14.

Rosenblad, C., et al.. (1998). Low-temperature heteroepitaxy by LEPECVD. Thin Solid Films. 318(1-2). 11–14. 17 indexed citations

15.

Rosenblad, C., Thomas Graf, J. Stangl, et al.. (1998). Epitaxial growth at high rates with LEPECVD. Thin Solid Films. 336(1-2). 89–91. 9 indexed citations

16.

Rosenblad, C., et al.. (1998). Low temperature epitaxial growth by LEPECVD. Journal of Crystal Growth. 188(1-4). 125–130. 19 indexed citations

17.

Rosenblad, C., et al.. (1998). Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(5). 2785–2790. 119 indexed citations

18.

Fanciulli, M., C. Rosenblad, G. Weyer, et al.. (1997). The electronic configuration of Fe in. Journal of Physics Condensed Matter. 9(7). 1619–1630. 19 indexed citations

19.

Fanciulli, M., C. Rosenblad, G. Weyer, et al.. (1995). Phase Transformations in Layered Fe-Si Structures. MRS Proceedings. 402. 6 indexed citations

20.

Fanciulli, M., C. Rosenblad, G. Weyer, et al.. (1995). Conversion Electron Mössbauer Spectroscopy Study of Epitaxialβ-FeSi2Grown by Molecular Beam Epitaxy. Physical Review Letters. 75(8). 1642–1645. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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