V. B. Shuman

488 total citations
69 papers, 372 citations indexed

About

V. B. Shuman is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. B. Shuman has authored 69 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 37 papers in Materials Chemistry and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. B. Shuman's work include Silicon and Solar Cell Technologies (34 papers), Silicon Nanostructures and Photoluminescence (31 papers) and Semiconductor materials and interfaces (18 papers). V. B. Shuman is often cited by papers focused on Silicon and Solar Cell Technologies (34 papers), Silicon Nanostructures and Photoluminescence (31 papers) and Semiconductor materials and interfaces (18 papers). V. B. Shuman collaborates with scholars based in Russia, Germany and United Kingdom. V. B. Shuman's co-authors include L. М. Portsel, Yu. A. Astrov, A. M. Danishevskiı̆, N.S. Savkina, N. V. Abrosimov, S. G. Pavlov, Andrey Yu. Rogachev, T. T. Mnatsakanov, Heinz‐Wilhelm Hübers and L. I. Pomortseva and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Applied Surface Science.

In The Last Decade

V. B. Shuman

68 papers receiving 363 citations

Peers

V. B. Shuman

EEE

AMPO

Masayasu Nishizawa Japan

U. Mackens Germany

Gérard Guillot France

J. P. Xanthakis Greece

S. Dreiner Germany

Paul Wickboldt United States

Susumu Ninomiya Japan

L. S. Kokhanchik Russia

T. Shioda Japan

S. Habermehl United States

Masayasu Nishizawa Japan

V. B. Shuman

381 ×1.4

EEE

199 ×0.9

184 ×1.5

AMPO

51 ×0.8

17 ×0.7

Citations per year, relative to V. B. Shuman V. B. Shuman (= 1×) peers Masayasu Nishizawa

Countries citing papers authored by V. B. Shuman

Since Specialization

Citations

This map shows the geographic impact of V. B. Shuman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. B. Shuman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. B. Shuman more than expected).

Fields of papers citing papers by V. B. Shuman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. B. Shuman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. B. Shuman. The network helps show where V. B. Shuman may publish in the future.

Co-authorship network of co-authors of V. B. Shuman

This figure shows the co-authorship network connecting the top 25 collaborators of V. B. Shuman. A scholar is included among the top collaborators of V. B. Shuman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. B. Shuman. V. B. Shuman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shuman, V. B., et al.. (2023). Solubility of Magnesium in Silicon. Semiconductors. 57(10). 465–468.

Astrov, Yu. A., et al.. (2022). Magnesium‐Related Donors in Silicon: State of the Art. physica status solidi (a). 219(23). 1 indexed citations

Pavlov, S. G., V. B. Shuman, L. М. Portsel, et al.. (2022). Combination of ultrafast time-resolved spectroscopy techniques for the analysis of electron dynamics of heliumlike impurity centers in silicon. Physical review. B.. 106(19). 2 indexed citations

Pavlov, S. G., L. М. Portsel, V. B. Shuman, et al.. (2021). Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon. Physical Review Materials. 5(11). 4 indexed citations

Pavlov, S. G., Yu. A. Astrov, L. М. Portsel, et al.. (2021). Magnesium-related shallow donor centers in silicon. Materials Science in Semiconductor Processing. 130. 105833–105833. 4 indexed citations

Pavlov, S. G., D. Kamenskyi, Yu. A. Astrov, et al.. (2020). Higher-order Zeeman effect of Mg-related donor complexes in silicon. Physical review. B.. 102(11). 3 indexed citations

Litvinenko, K. L., S. K. Clowes, Hans Engelkamp, et al.. (2018). Radii of Rydberg states of isolated silicon donors. Physical review. B.. 98(8). 7 indexed citations

Astrov, Yu. A., et al.. (2011). Gas-phase doping of silicon with sulfur. Semiconductor Science and Technology. 26(5). 55021–55021. 17 indexed citations

Astrov, Yu. A., et al.. (2008). Planar microdischarge device for high-speed infrared thermography: Application of selenium-doped silicon detectors. Journal of Applied Physics. 103(11). 10 indexed citations

10.

Danishevskiı̆, A. M., V. B. Shuman, D. A. Kurdyukov, et al.. (2005). Magnetic and Electrical Properties of Nanoporous Carbon with Pores Filled by Ni Atoms. Fullerenes Nanotubes and Carbon Nanostructures. 13(sup1). 411–414. 2 indexed citations

11.

Sorokin, L. M., et al.. (2004). Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes. Technical Physics Letters. 30(11). 950–953. 1 indexed citations

12.

Fedosyuk, V. M., A. M. Danishevskiı̆, D. A. Kurdyukov, V. B. Shuman, & S. K. Gordeev. (2003). Magnetic properties of nickel clusters in nanoporous carbon. Physics of the Solid State. 45(9). 1750–1753. 8 indexed citations

13.

Strokan, N. B., et al.. (1998). Properties of p +-n structures with a buried layer of radiation-induced defects. Semiconductors. 32(3). 325–331. 5 indexed citations

14.

Shuman, V. B., et al.. (1997). Multiple-junction silicon concentrator solar cells fabricated by diffusion bonding. Technical Physics. 42(2). 238–240. 1 indexed citations

15.

Shvarts, M. Z., et al.. (1997). Characteristic features of silicon multijunction solar cells with vertical p-n junctions. Semiconductors. 31(7). 726–727. 1 indexed citations

16.

Shuman, V. B., et al.. (1996). Low-temperature characteristics of solar cells. Semiconductors. 29(8). 779–780. 1 indexed citations

17.

Danishevskiı̆, A. M., et al.. (1996). Appearance of β-phase crystallites in porous layers of silicon carbide. Semiconductors. 30(6). 564–567. 3 indexed citations

18.

Shvarts, M. Z., et al.. (1995). Silicon concentrator solar cells prepared with polymer diffusants. Technical Physics Letters. 21(1). 61–62. 1 indexed citations

19.

Danishevskiı̆, A. M., V. B. Shuman, Andrey Yu. Rogachev, & P. A. Ivanov. (1995). Investigation of porous silicon carbide by methods of vibrational and luminescence spectroscopy. Semiconductors. 29(12). 1106–1111. 11 indexed citations

20.

Andrianov, A. V., et al.. (1993). Time-resolved photoluminescence of porous silicon. Semiconductors. 27(1). 71–73. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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