U. König

3.0k citations

133 papers · 2.2k indexed · h-index 27

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Atomic and Molecular Physics, and Optics 64
- Semiconductor Quantum Structures and Devices 45
- Semiconductor materials and interfaces 25
Electrical and Electronic Engineering 112
- Advancements in Semiconductor Devices and Circuit Design 65
- Semiconductor materials and devices 63
- Radio Frequency Integrated Circuit Design 29
- Silicon and Solar Cell Technologies 12
- Photonic and Optical Devices 11

Co-authors: F. Schäffler T. Hackbarth H. Presting H. Kibbel E. Kasper Karl S. Ryder Andrew P. Abbott H.-J. Herzog
Journals: Electronics Letters (15 papers)Solid-State Electronics (12 papers)Journal of Crystal Growth (10 papers)Journal of Applied Physics (6 papers)Thin Solid Films (6 papers)
Partner nations: Germany United Kingdom Russia

In The Last Decade

U. König

129 papers receiving 2.1k citations

Peers

Countries citing papers authored by U. König

Since Specialization

Citations

This map shows the geographic impact of U. König's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. König with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. König more than expected).

Fields of papers citing papers by U. König

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. König. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. König. The network helps show where U. König may publish in the future.

Co-authorship network

The 25 scholars most cited alongside U. König, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. König Line = papers co-authored together U. König links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Monolithic micropower amplifier using SiGe n -MODFET device Electronics Letters ·Hui-Ru Yang, Kristel Fobelets, K. Michelakis, Margaret Crabbe, Christos Papavassiliou, T. Hackbarth, U. König	2003	9
2	SU8 photoresist as an etch mask for local deep anodic etching of silicon physica status solidi (a) ·V. V. Starkov, Ravi Kant Upadhayay, Prit P Singh, H. Presting, Ouhaid Legha Boukbiza, U. König	2003	11
3	De-embedded ultra-low noise 0.1 µm gate lengthGe/Si _0.4 Ge _0.6 p -MODFET Electronics Letters ·良平小倉, F. Aniel, P. Crozat, R. Adde, G. Höck, T. Hackbarth, U. König	2001	3
4	High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition Applied Physics Letters ·G. Höck, E. Kohn, C. Rosenblad, H. von Känel, H.-J. Herzog, U. König	2000	64
5	Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching Semiconductor Science and Technology ·U. Wieser, Yi-Xiang Huang, U. Kunze, T. Hackbarth, U. König	2000	15
6	0.1 µm gate length p -type Ge/Si _0.4 Ge _0.6 MODFET with 135 GHz f _max Electronics Letters ·G. Höck, T. Hackbarth, O. Merimskaya, H.-J. Herzog, 良平小倉, F. Aniel, P. Crozat, R. Adde, E. Kohn, U. König	2000	14
7	Effects of Carbon Doping on the 1/f noise in SiGe HBTs European Solid-State Device Research Conference ·A. Gruhle, H. Kibbel, U. König, 土岐精一, 何清安	1999	1
8	High-frequency SiGe-n-MODFET for microwave applications IEEE Microwave and Guided Wave Letters ·Nia Agatha Tampubolon, T. Hackbarth, G. Höck, Mariia Perets, U. König	1999	29
9	Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation MRS Proceedings ·Н. А. Соболев, Ute Kaiser, I. I. Khodos, H. Presting, U. König	1998	2
10	Design and fabrication of Si/SiGe n-type MODFETs Physica E Low-dimensional Systems and Nanostructures ·Michael Glück, T. Hackbarth, Martin Birk, A. Haas, E. Kohn, U. König	1998	10
11	Modulation-doped Si1−x−yGexCy p-type Hetero-FETs Physica E Low-dimensional Systems and Nanostructures ·Michael Glück, U. König, W. Winter, Karl Brünner, K. Eberl	1998	7
12	The Differential SiGe-HBT European Solid-State Device Research Conference ·A. Schüppen, U. König, A. Gruhle, H. Kibbel, U. Erben	1994	1
13	p-type Ge-channel MODFETs with high transconductance grown on Si substrates IEEE Electron Device Letters ·U. König, F. Schäffler	1993	78
14	Differential molecular beam epitaxy for multilayered bipolar devices Thin Solid Films ·U. König, H. M. Lipp, J.-F. Luy�, H. Kibbel, F. Schäffler	1990	3
15	Doping dependence of the specific contact resistance of NiSi2 on (100) n-Si Journal of Applied Physics ·José Nazareno C Negrão, U. König	1988	1
16	Simultaneous annealing for implantation activation and spin-on source diffusion into GaInAs: A novel approach for the formation of p n junctions Journal of Applied Physics ·U. König, H. M. Lipp	1986	1
17	Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing Journal of Electronic Materials ·U. König, Stephanie Marino, Henry Tiemann	1985	18
18	Contact Angles Between III–V Melts and Several Substrates Journal of The Electrochemical Society ·U. König, Wolfgang Keck	1983	17
19	Influence of cooling rate on convection during LPE growth of GaAs and (Ga,Al)As Journal of Crystal Growth ·U. König, Wolfgang Keck	1983	4
20	Si–MBE: Growth and Sb doping Journal of Vacuum Science and Technology ·U. König, H. Kibbel, E. Kasper	1979	29

About U. König

U. König is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Materials Chemistry and Computational Mechanics, having authored 133 papers that have together received 2.2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (65 papers), Semiconductor materials and devices (63 papers), Semiconductor Quantum Structures and Devices (45 papers), Radio Frequency Integrated Circuit Design (29 papers), Semiconductor materials and interfaces (25 papers), Nanowire Synthesis and Applications (14 papers), Silicon and Solar Cell Technologies (12 papers) and Photonic and Optical Devices (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (819 citations), Catalysis (110 citations), Electrochemistry (89 citations) and Materials Chemistry (531 citations). U. König has collaborated with scholars based in Germany, United Kingdom and Russia. Frequent co-authors include F. Schäffler, T. Hackbarth, H. Presting, H. Kibbel, E. Kasper, Karl S. Ryder, Andrew P. Abbott, H.-J. Herzog, G. Höck and U. Erben. Their work appears in journals such as Electronics Letters, Solid-State Electronics, Journal of Crystal Growth, Journal of Applied Physics and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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