U. Smith

867 total citations
50 papers, 710 citations indexed

About

U. Smith is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, U. Smith has authored 50 papers receiving a total of 710 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in U. Smith's work include Semiconductor materials and interfaces (18 papers), Semiconductor materials and devices (15 papers) and Thin-Film Transistor Technologies (10 papers). U. Smith is often cited by papers focused on Semiconductor materials and interfaces (18 papers), Semiconductor materials and devices (15 papers) and Thin-Film Transistor Technologies (10 papers). U. Smith collaborates with scholars based in Sweden, United States and France. U. Smith's co-authors include Fredric Ericson, Jan‐Åke Schweitz, D. Mangelinck, Tobias Jarmar, S.-L. Zhang, S. Berg, F. Engelmark, Ilia Katardjiev, Anders Hårsta and C. Bergman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

U. Smith

47 papers receiving 671 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
U. Smith Sweden	13	456	342	187	148	146	50	710
H. Norström Sweden	16	660 1.4×	255 0.7×	121 0.6×	246 1.7×	94 0.6×	69	857
H. Kattelus Finland	18	908 2.0×	418 1.2×	359 1.9×	267 1.8×	133 0.9×	68	1.1k
J. Greggi United States	14	347 0.8×	246 0.7×	87 0.5×	90 0.6×	74 0.5×	38	657
T.A. Nguyen Tan France	18	487 1.1×	708 2.1×	159 0.9×	52 0.4×	73 0.5×	59	927
Akihiro Moritani Japan	13	472 1.0×	245 0.7×	126 0.7×	83 0.6×	56 0.4×	58	623
I. Friel United Kingdom	17	363 0.8×	363 1.1×	162 0.9×	261 1.8×	89 0.6×	28	876
Michael D. Whitfield United Kingdom	19	351 0.8×	141 0.4×	188 1.0×	225 1.5×	55 0.4×	64	784
J.C. Oberlin France	15	400 0.9×	254 0.7×	132 0.7×	86 0.6×	80 0.5×	41	617
K. Gołaszewska Poland	14	429 0.9×	171 0.5×	75 0.4×	46 0.3×	65 0.4×	71	552
Anne‐Marie Papon France	21	952 2.1×	399 1.2×	196 1.0×	79 0.5×	109 0.7×	62	1.2k

Countries citing papers authored by U. Smith

Since Specialization

Citations

This map shows the geographic impact of U. Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Smith more than expected).

Fields of papers citing papers by U. Smith

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Smith. The network helps show where U. Smith may publish in the future.

Co-authorship network of co-authors of U. Smith

This figure shows the co-authorship network connecting the top 25 collaborators of U. Smith. A scholar is included among the top collaborators of U. Smith based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Smith. U. Smith is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Norström, H., et al.. (2016). High-temperature Ta diffusion in the grain boundary of thin Cu films. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 34(4). 5 indexed citations

Norström, H., et al.. (2016). Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 34(6). 7 indexed citations

Andersson, Joakim, Tomáš Kubart, Tomas Nyberg, et al.. (2011). Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness. Electrochemical and Solid-State Letters. 14(7). H268–H268. 20 indexed citations

Chen, Si, Leif Nyholm, Amelie Eriksson Karlström, et al.. (2011). Current Instability for Silicon Nanowire Field-Effect Sensors Operating in Electrolyte with Platinum Gate Electrodes. Electrochemical and Solid-State Letters. 14(7). J34–J34. 22 indexed citations

Lu, Jun, et al.. (2009). Oxygen out-diffusion from buried layers in SOI and SiC–SOI substrates. Solid-State Electronics. 54(2). 153–157. 6 indexed citations

Olsson, Jörgen, et al.. (2008). Silicon-on-SiC hybrid substrate with improved high-frequency and thermal performance. 51–52. 1 indexed citations

Martín, Diego, et al.. (2008). Thermal characterization of Silicon-on-SiC substrates. 69–70. 2 indexed citations

Lü, Jun, et al.. (2008). Oxide-Free Silicon to Silicon Carbide Heterobond. ECS Transactions. 16(8). 377–383. 2 indexed citations

Jarmar, Tobias, et al.. (2004). Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1−uGeu film. Journal of Applied Physics. 96(12). 7179–7182. 6 indexed citations

10.

Jarmar, Tobias, et al.. (2004). Germanium-induced texture and preferential orientation ofNiSi1−xGexlayers onSi1−xGex. Physical Review B. 70(23). 4 indexed citations

11.

Johansson, Ted, J. Wittborn, H. Norström, et al.. (2002). A Self-Aligned Double Poly-Si Process Utilizing Non-Selective Epitaxy of SiGe:C for Intrinsic Base and Poly-SiGe for Extrinsic Base. 105. 259–262. 1 indexed citations

12.

Smith, U., et al.. (2001). Temperature Coefficient of Resistivity in Heavily Doped Oxygen-Rich Polysilicon. Journal of The Electrochemical Society. 148(12). G725–G725. 4 indexed citations

13.

Smith, U., et al.. (2001). Long-term stability and electrical properties of fluorine doped polysilicon IC-resistors. Materials Science in Semiconductor Processing. 4(4). 373–382. 5 indexed citations

14.

Smith, U., et al.. (1999). On the degradation of InGaAsP/InP-based bulk lasers. Journal of Lightwave Technology. 17(12). 2584–2594. 10 indexed citations

15.

Ericson, Fredric, et al.. (1991). Hole formation in thin aluminium films under controlled variation of strain and temperature. Thin Solid Films. 197(1-2). 67–83. 29 indexed citations

16.

Smith, U., et al.. (1990). A process-related study of the Al/MoSi2–Al double-level metallization system. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 8(3). 499–510. 2 indexed citations

17.

Smith, U., et al.. (1976). Fluctuations in doubly scattered laser light. Physica A Statistical Mechanics and its Applications. 83(1). 121–142. 11 indexed citations

18.

Smith, U., et al.. (1974). The microwave resonance line shape in ferromagnetic cubic FeGe. Journal of Physics and Chemistry of Solids. 35(9). 1237–1245. 5 indexed citations

19.

Björn, Lars Olof, et al.. (1972). Magnetic resonance in cubic FeGe. Journal of Magnetic Resonance (1969). 8(3). 271–273. 5 indexed citations

20.

Smith, U.. (1956). A transducer-type frequency meter. Electrical Engineering. 75(3). 250–250.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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