T. Ben

1.8k total citations
75 papers, 1.4k citations indexed

About

T. Ben is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, T. Ben has authored 75 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Atomic and Molecular Physics, and Optics, 48 papers in Electrical and Electronic Engineering and 31 papers in Materials Chemistry. Recurrent topics in T. Ben's work include Semiconductor Quantum Structures and Devices (48 papers), Quantum Dots Synthesis And Properties (20 papers) and Advanced Semiconductor Detectors and Materials (20 papers). T. Ben is often cited by papers focused on Semiconductor Quantum Structures and Devices (48 papers), Quantum Dots Synthesis And Properties (20 papers) and Advanced Semiconductor Detectors and Materials (20 papers). T. Ben collaborates with scholars based in Spain, United Kingdom and France. T. Ben's co-authors include Sergio I. Molina, D. González, Ana M. Sánchez, Pedro L. Galindo, J. M. Ulloa, D.F. Reyes, Elisa Guerrero, Andrés Yáñez Escolano, J. Pizarro and A. D. Utrilla and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. Ben

72 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Ben Spain 21 819 767 742 329 231 75 1.4k
M. Jaafar Spain 25 975 1.2× 748 1.0× 301 0.4× 458 1.4× 204 0.9× 78 1.6k
А. К. Гутаковский Russia 21 1.1k 1.3× 986 1.3× 1.3k 1.7× 354 1.1× 165 0.7× 219 2.0k
A. Liebig Germany 13 525 0.6× 1.3k 1.8× 836 1.1× 192 0.6× 195 0.8× 34 1.9k
Fengshan Zheng China 20 754 0.9× 1.9k 2.5× 1.1k 1.5× 175 0.5× 384 1.7× 48 2.6k
N. Cherkashin France 27 851 1.0× 938 1.2× 1.7k 2.2× 442 1.3× 249 1.1× 146 2.2k
Eric R. Hemesath United States 21 820 1.0× 873 1.1× 1.3k 1.8× 1.4k 4.4× 86 0.4× 32 2.0k
George Immink Netherlands 11 636 0.8× 797 1.0× 963 1.3× 1.2k 3.6× 148 0.6× 11 1.7k
Magnus Heurlin Sweden 20 600 0.7× 566 0.7× 1.0k 1.4× 1.2k 3.7× 162 0.7× 39 1.5k
Ahmet Oral Türkiye 19 919 1.1× 286 0.4× 448 0.6× 296 0.9× 223 1.0× 70 1.3k
Shigetaka Tomiya Japan 22 820 1.0× 978 1.3× 1.1k 1.5× 763 2.3× 919 4.0× 94 2.1k

Countries citing papers authored by T. Ben

Since Specialization
Citations

This map shows the geographic impact of T. Ben's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ben with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ben more than expected).

Fields of papers citing papers by T. Ben

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ben. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ben. The network helps show where T. Ben may publish in the future.

Co-authorship network of co-authors of T. Ben

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ben. A scholar is included among the top collaborators of T. Ben based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ben. T. Ben is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ben, T., et al.. (2024). Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots. Nanomaterials. 14(4). 375–375. 2 indexed citations
3.
González, D., et al.. (2023). Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers. Nanomaterials. 13(5). 798–798. 2 indexed citations
4.
Bradford, Jonathan, Tin S. Cheng, Christopher J. Mellor, et al.. (2023). Wafer‐Scale Two‐Dimensional Semiconductors for Deep UV Sensing. Small. 20(7). e2305865–e2305865. 13 indexed citations
5.
Ben, T., et al.. (2022). Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications. Nanomaterials. 12(8). 1368–1368. 8 indexed citations
6.
Luna, E., et al.. (2022). Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate. Nanomaterials. 12(14). 2504–2504. 1 indexed citations
7.
Reyes, D.F., et al.. (2022). Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions. Applied Surface Science. 607. 154966–154966. 4 indexed citations
8.
Gonzalo, Alicia, et al.. (2019). Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices. Nanomaterials. 9(4). 623–623. 4 indexed citations
9.
Gonzalo, Alicia, A. D. Utrilla, D.F. Reyes, et al.. (2017). Strain-balanced type-II superlattices for efficient multi-junction solar cells. Scientific Reports. 7(1). 4012–4012. 20 indexed citations
10.
González, D., A. D. Utrilla, Alicia Gonzalo, et al.. (2017). Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process. Nanotechnology. 28(42). 425702–425702. 20 indexed citations
11.
Ben, T., M. Herrera, Jesús Hernández‐Saz, et al.. (2015). Mapping the plasmonic response of gold nanoparticles embedded in TiO2thin films. Nanotechnology. 26(40). 405702–405702. 3 indexed citations
12.
González, D., D.F. Reyes, T. Ben, et al.. (2015). Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots. Solar Energy Materials and Solar Cells. 145. 154–161. 17 indexed citations
13.
Ben, T., et al.. (2014). Structural and Chemical Evolution of the Spontaneous Core-Shell Structures of AlxGa1-xN/GaN Nanowires. Microscopy and Microanalysis. 20(4). 1254–1261. 2 indexed citations
14.
Ben, T., et al.. (2013). Modification of the optical and structural properties of ZnO nanowires by low-energy Ar+ ion sputtering. Nanoscale Research Letters. 8(1). 162–162. 10 indexed citations
15.
Redondo‐Cubero, A., K. Lorenz, E. Wendler, et al.. (2013). Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures. Nanotechnology. 24(50). 505717–505717. 14 indexed citations
16.
Himmerlich, Marcel, R. Aidam, Lutz Kirste, et al.. (2013). N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy. Journal of Applied Physics. 113(3). 9 indexed citations
17.
Romero‐Gómez, Pablo, Alberto Palmero, T. Ben, et al.. (2010). Surface nanostructuring ofTiO2thin films by high energy ion irradiation. Physical Review B. 82(11). 27 indexed citations
18.
Galindo, Pedro L., S. Kret, Ana M. Sánchez, et al.. (2007). The Peak Pairs algorithm for strain mapping from HRTEM images. Ultramicroscopy. 107(12). 1186–1193. 232 indexed citations
19.
Sánchez, Ana M., et al.. (2006). Direct experimental evidence of metastable epitaxial zinc-blende MgS. Applied Physics Letters. 89(12). 14 indexed citations
20.
Granados, Daniel, J. M. Garcı́a, T. Ben, & Sergio I. Molina. (2005). Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001). Applied Physics Letters. 86(7). 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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