Felix Kaess

679 total citations
28 papers, 581 citations indexed

About

Felix Kaess is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Felix Kaess has authored 28 papers receiving a total of 581 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 18 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Felix Kaess's work include GaN-based semiconductor devices and materials (22 papers), Semiconductor materials and devices (14 papers) and Ga2O3 and related materials (12 papers). Felix Kaess is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Semiconductor materials and devices (14 papers) and Ga2O3 and related materials (12 papers). Felix Kaess collaborates with scholars based in United States, Germany and Switzerland. Felix Kaess's co-authors include Zlatko Sitar, Ramón Collazo, Pramod Reddy, Ronny Kirste, Seiji Mita, M. Declercq, Riad Kanan, B. Hochet, Shun Washiyama and Andrew Klump and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Felix Kaess

28 papers receiving 551 citations

Peers

Countries citing papers authored by Felix Kaess

Since Specialization

Citations

This map shows the geographic impact of Felix Kaess's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Felix Kaess with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Felix Kaess more than expected).

Fields of papers citing papers by Felix Kaess

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Felix Kaess. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Felix Kaess. The network helps show where Felix Kaess may publish in the future.

Co-authorship network of co-authors of Felix Kaess

This figure shows the co-authorship network connecting the top 25 collaborators of Felix Kaess. A scholar is included among the top collaborators of Felix Kaess based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Felix Kaess. Felix Kaess is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control 2021 ·Semiconductor Science and Technology ·Dennis Szymanski, Ke Wang, Felix Kaess, Ronny Kirste, Seiji Mita, Pramod Reddy, Zlatko Sitar, Ramón Collazo	6
2	Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control 2020 ·Journal of Applied Physics ·Andrew Klump, Marc P. Hoffmann, Felix Kaess, James Tweedie, Pramod Reddy, Ronny Kirste, Zlatko Sitar, Ramón Collazo	24
3	Improving the Conductivity Limits in Si Doped Al Rich AlGaN 2018 ·Pramod Reddy, Qiang Guo, James Tweedie, Shun Washiyama, Felix Kaess, Seiji Mita, M. Hayden Breckenridge, Ronny Kirste, Ramón Collazo, Andrew Klump, Biplab Sarkar, Zlatko Sitar	1
4	A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition 2018 ·Journal of Applied Physics ·Shun Washiyama, Pramod Reddy, Felix Kaess, Ronny Kirste, Seiji Mita, Ramón Collazo, Zlatko Sitar	24
5	(Invited) Material Considerations for the Development of III-Nitride Power Devices 2017 ·ECS Transactions ·Biplab Sarkar, Pramod Reddy, Felix Kaess, (unknown), James Tweedie, Seiji Mita, Ronny Kirste, E. Kohn, Ramón Collazo, Zlatko Sitar	4
6	Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers 2017 ·Applied Physics Letters ·Pramod Reddy, Felix Kaess, James Tweedie, Ronny Kirste, Seiji Mita, Ramón Collazo, Zlatko Sitar	15
7	High free carrier concentration in p-GaN grown on AlN substrates 2017 ·Applied Physics Letters ·Biplab Sarkar, Seiji Mita, Pramod Reddy, Andrew Klump, Felix Kaess, James Tweedie, Isaac Bryan, Zachary Bryan, Ronny Kirste, E. Kohn, Ramón Collazo, Zlatko Sitar	24
8	Defect-free Ni/GaN Schottky barrier behavior with high temperature stability 2017 ·Applied Physics Letters ·Pramod Reddy, Biplab Sarkar, Felix Kaess, Michael Gerhold, E. Kohn, Ramón Collazo, Zlatko Sitar	37
9	On Ni/Au Alloyed Contacts to Mg-Doped GaN 2017 ·Journal of Electronic Materials ·Biplab Sarkar, Pramod Reddy, Andrew Klump, Felix Kaess, (unknown), Ronny Kirste, Seiji Mita, E. Kohn, Ramón Collazo, Zlatko Sitar	14
10	The effect of illumination power density on carbon defect configuration in silicon doped GaN 2016 ·Journal of Applied Physics ·Felix Kaess, Pramod Reddy, (unknown), Andrew Klump, (unknown), Alexander Franke, Ronny Kirste, A. Hoffmann, Ramón Collazo, Zlatko Sitar	18
11	Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications 2016 ·Applied Physics Letters ·(unknown), Wei Guo, Ronny Kirste, Felix Kaess, Isaac Bryan, (unknown), Abhijeet Bagal, Pramod Reddy, (unknown), Alexander Franke, Seiji Mita, Chih‐Hao Chang, A. Hoffmann, M. Zgonik, Ramón Collazo, Zlatko Sitar	35
12	High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers 2016 ·Journal of Applied Physics ·Alexander Franke, Marc P. Hoffmann, Ronny Kirste, Milena Bobea, James Tweedie, Felix Kaess, Michael Gerhold, Ramón Collazo, Zlatko Sitar	19
13	Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition 2016 ·Journal of Applied Physics ·Felix Kaess, Seiji Mita, (unknown), Pramod Reddy, Andrew Klump, (unknown), Shun Washiyama, Alexander Franke, Ronny Kirste, A. Hoffmann, Ramón Collazo, Zlatko Sitar	71
14	Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control 2016 ·Journal of Applied Physics ·Pramod Reddy, Marc P. Hoffmann, Felix Kaess, Zachary Bryan, Isaac Bryan, Milena Bobea, Andrew Klump, James Tweedie, Ronny Kirste, Seiji Mita, Michael Gerhold, Ramón Collazo, Zlatko Sitar	53
15	High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies 2016 ·Journal of Applied Physics ·Pramod Reddy, Shun Washiyama, Felix Kaess, M. Hayden Breckenridge, (unknown), (unknown), (unknown), Alexander Franke, Biplab Sarkar, E. Kohn, Ramón Collazo, Zlatko Sitar	25
16	Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN 2014 ·Physical Review B ·A. R. Goñi, Felix Kaess, J. S. Reparaz, M. I. Alonso, M. Garriga, Gordon Callsen, Markus R. Wagner, A. Hoffmann, Zlatko Sitar	14
17	A 640 mW high accuracy 8-bit 1 GHz flash ADC encoder 2003 ·Riad Kanan, Felix Kaess, M. Declercq	16
18	A low-power GaAs MESFET dual-modulus prescaler 2002 ·Riad Kanan, B. Hochet, Felix Kaess, M. Declercq	2
19	New encoding scheme for high-speed flash ADC's 2002 ·Felix Kaess, Riad Kanan, B. Hochet, M. Declercq	78
20	A low-power GaAs flip-flop 1997 ·AMS Acta (University of Bologna) ·Riad Kanan, B. Hochet, Felix Kaess, M. Declercq	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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