Marc P. Hoffmann

1.3k total citations
34 papers, 1.1k citations indexed

About

Marc P. Hoffmann is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Marc P. Hoffmann has authored 34 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Condensed Matter Physics, 21 papers in Electronic, Optical and Magnetic Materials and 14 papers in Electrical and Electronic Engineering. Recurrent topics in Marc P. Hoffmann's work include GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (21 papers) and Semiconductor materials and devices (11 papers). Marc P. Hoffmann is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (21 papers) and Semiconductor materials and devices (11 papers). Marc P. Hoffmann collaborates with scholars based in United States, Germany and France. Marc P. Hoffmann's co-authors include Zlatko Sitar, Ronny Kirste, Ramón Collazo, Zachary Bryan, James Tweedie, Isaac Bryan, Michael Gerhold, A. Strittmatter, A. Dadgar and A. Hoffmann and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanoscale.

In The Last Decade

Marc P. Hoffmann

33 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Marc P. Hoffmann United States 19 947 570 414 406 268 34 1.1k
Michael W. Moseley United States 24 1.1k 1.1× 635 1.1× 399 1.0× 506 1.2× 291 1.1× 40 1.2k
Florian Furtmayr Germany 18 723 0.8× 468 0.8× 570 1.4× 340 0.8× 448 1.7× 23 1.1k
Tom Zimmermann United States 16 689 0.7× 399 0.7× 246 0.6× 566 1.4× 193 0.7× 41 953
J. Grandal Spain 17 803 0.8× 502 0.9× 522 1.3× 308 0.8× 460 1.7× 45 1.1k
Andrés de Luna Bugallo Mexico 18 686 0.7× 479 0.8× 767 1.9× 473 1.2× 534 2.0× 51 1.3k
Sylvia Hagedorn Germany 19 932 1.0× 580 1.0× 450 1.1× 214 0.5× 361 1.3× 62 1.0k
C. H. Kuo Taiwan 17 715 0.8× 433 0.8× 573 1.4× 345 0.8× 181 0.7× 46 935
Paul T. Blanchard United States 17 562 0.6× 312 0.5× 456 1.1× 506 1.2× 409 1.5× 54 1.1k
Masahiro Horita Japan 25 1.1k 1.2× 611 1.1× 621 1.5× 1.4k 3.5× 168 0.6× 122 1.8k
Jin Seo Im Germany 16 1.3k 1.3× 632 1.1× 550 1.3× 374 0.9× 444 1.7× 30 1.6k

Countries citing papers authored by Marc P. Hoffmann

Since Specialization
Citations

This map shows the geographic impact of Marc P. Hoffmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marc P. Hoffmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marc P. Hoffmann more than expected).

Fields of papers citing papers by Marc P. Hoffmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marc P. Hoffmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marc P. Hoffmann. The network helps show where Marc P. Hoffmann may publish in the future.

Co-authorship network of co-authors of Marc P. Hoffmann

This figure shows the co-authorship network connecting the top 25 collaborators of Marc P. Hoffmann. A scholar is included among the top collaborators of Marc P. Hoffmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marc P. Hoffmann. Marc P. Hoffmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schulz, Tobias, Su‐Hyun Yoo, L. Lymperakis, et al.. (2022). Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates. Journal of Applied Physics. 132(22). 7 indexed citations
2.
Lugauer, H.‐J., et al.. (2022). UV-C LEDs and their use in disinfection applications. 15–15. 1 indexed citations
3.
Klump, Andrew, Marc P. Hoffmann, Felix Kaess, et al.. (2020). Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control. Journal of Applied Physics. 127(4). 24 indexed citations
4.
Nippert, Felix, Marc P. Hoffmann, Hans‐Jürgen Lugauer, et al.. (2020). Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates. Journal of Applied Physics. 127(9). 10 indexed citations
5.
Nippert, Felix, Matthew Davies, Martin Mandl, et al.. (2020). Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition. physica status solidi (b). 257(12). 17 indexed citations
6.
Nippert, Felix, Marc P. Hoffmann, Hans‐Jürgen Lugauer, et al.. (2020). Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization. physica status solidi (b). 257(12). 10 indexed citations
7.
Jacopin, Gwénolé, Matthew Davies, Georg Rossbach, et al.. (2020). Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization. physica status solidi (b). 258(4). 1 indexed citations
8.
Hoffmann, Marc P., Felix Nippert, Hans‐Jürgen Lugauer, et al.. (2019). Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues. Journal of Applied Physics. 126(7). 21 indexed citations
9.
Nippert, Felix, Matthew Davies, Marc P. Hoffmann, et al.. (2018). Auger recombination in AlGaN quantum wells for UV light-emitting diodes. Applied Physics Letters. 113(7). 60 indexed citations
10.
Franke, Alexander, Marc P. Hoffmann, Ronny Kirste, et al.. (2016). High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers. Journal of Applied Physics. 120(13). 19 indexed citations
11.
Reddy, Pramod, Marc P. Hoffmann, Felix Kaess, et al.. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. Journal of Applied Physics. 120(18). 53 indexed citations
12.
Bryan, Zachary, Isaac Bryan, Benjamin E. Gaddy, et al.. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. Applied Physics Letters. 105(22). 222101–222101. 49 indexed citations
13.
Kirste, Ronny, Seiji Mita, Marc P. Hoffmann, et al.. (2014). Properties of AlN based lateral polarity structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(2). 261–264. 11 indexed citations
14.
Hoffmann, Marc P., Ronny Kirste, Seiji Mita, et al.. (2014). Growth and characterization of AlxGa1−xN lateral polarity structures. physica status solidi (a). 212(5). 1039–1042. 15 indexed citations
15.
Kirste, Ronny, Marc P. Hoffmann, Edward Sachet, et al.. (2013). Ge doped GaN with controllable high carrier concentration for plasmonic applications. Applied Physics Letters. 103(24). 48 indexed citations
16.
Hoffmann, Marc P., Michael Gerhold, Ronny Kirste, et al.. (2013). Fabrication and characterization of lateral polar GaN structures for second harmonic generation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8631. 86311T–86311T. 13 indexed citations
17.
Dinh, Duc V., Bertrand Lacroix, P. Rutérana, et al.. (2013). Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy. Journal of Applied Physics. 114(17). 29 indexed citations
18.
Kirste, Ronny, Marc P. Hoffmann, James Tweedie, et al.. (2013). Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements. Journal of Applied Physics. 113(10). 49 indexed citations
19.
Bryan, Zachary, Marc P. Hoffmann, James Tweedie, et al.. (2012). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. Journal of Electronic Materials. 42(5). 815–819. 25 indexed citations
20.
Boeuf, Stéphane, Timo Strunk, Marc P. Hoffmann, et al.. (2011). Engineering hydrophobin DewA to generate surfaces that enhance adhesion of human but not bacterial cells. Acta Biomaterialia. 8(3). 1037–1047. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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