Alon Vardi

1.3k citations

52 papers · 1.0k indexed · h-index 20

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Condensed Matter Physics 14
- GaN-based semiconductor devices and materials 14
Electrical and Electronic Engineering 40
- Semiconductor materials and devices 34
- Advancements in Semiconductor Devices and Circuit Design 31
- Integrated Circuits and Semiconductor Failure Analysis 7

Co-authors: Jesús A. del AlamoXin ZhaoWenjie Lu G. Bahir S. E. Schacham E. Monroy F. H. Julien Maria Tchernycheva
Journals: Applied Physics Letters (8 papers)IEEE Electron Device Letters (7 papers)IEEE Transactions on Electron Devices (6 papers)Journal of Applied Physics (3 papers)physica status solidi (b) (2 papers)
Partner nations: United States Israel France

In The Last Decade

Alon Vardi

50 papers receiving 984 citations

Peers

Countries citing papers authored by Alon Vardi

Since Specialization

Citations

This map shows the geographic impact of Alon Vardi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alon Vardi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alon Vardi more than expected).

Fields of papers citing papers by Alon Vardi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alon Vardi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alon Vardi. The network helps show where Alon Vardi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Alon Vardi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Alon Vardi Line = papers co-authored together Alon Vardi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Fin-Width Scaling of Highly Doped InGaAs Fins IEEE Transactions on Electron Devices ·Xin Zhao, Alon Vardi, Jesús A. del Alamo	2019	4
2	Excess OFF-State Current in InGaAs FinFETs: Physics of the Parasitic Bipolar Effect IEEE Transactions on Electron Devices ·Xin Zhao, Alon Vardi, Jesús A. del Alamo	2019	4
3	Excess Off-State Current in InGaAs FinFETs IEEE Electron Device Letters ·Xin Zhao, Alon Vardi, Jesús A. del Alamo	2018	15
4	Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts IEEE Transactions on Electron Devices ·Xin Zhao, Christopher Heidelberger, Eugene A. Fitzgerald, Wenjie Lu, Alon Vardi, Jesús A. del Alamo	2018	11
5	First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD Wenjie Lu, Young‐Hee Lee, 久女杉田, 明郎春田, Alon Vardi, Jun Meng, Steven M. George, Jesús A. del Alamo	2018	26
6	Scaling Effects on Single-Event Transients in InGaAs FinFETs IEEE Transactions on Nuclear Science ·Huiqi Gong, Kai Ni, En Xia Zhang, Andrew L. Sternberg, John A. Kozub, Natsuki SHIRAI, Lance Kian Divino, Ava Hajian, Sharon M. Weiss, Robert A. Weller, Michael L. Alles, Robert A. Reed, Daniel M. Fleetwood, Ronald D. Schrimpf, Alon Vardi, Jesús A. del Alamo	2017	21
7	Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength IEEE Transactions on Nuclear Science ·Kai Ni, Andrew L. Sternberg, En Xia Zhang, John A. Kozub, Rong Jiang, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, Michael L. Alles, Dale McMorrow, Jianqiang Lin, Alon Vardi, Jesús A. del Alamo	2017	15
8	Sub-Thermal Subthreshold Characteristics in Top–Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs IEEE Electron Device Letters ·Xin Zhao, Alon Vardi, Jesús A. del Alamo	2017	42
9	CMOS beyond Si: Nanometer-Scale III-V MOSFETs Jesús A. del Alamo, Xiaowei Cai, Jianqiang Lin, Wenjie Lu, Alon Vardi, Xin Zhao	2017	6
10	Sub-10 nm diameter InGaAs vertical nanowire MOSFETs Xin Zhao, Christopher Heidelberger, Eugene A. Fitzgerald, Wenjie Lu, Alon Vardi, Jesús A. del Alamo	2017	20
11	Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation Alon Vardi, Jun Meng, Wenjie Lu, Xiaowei Cai, Xin Zhao, Jesús Grajal, Jesús A. del Alamo	2017	13
12	Nanometer-Scale III-V MOSFETs IEEE Journal of the Electron Devices Society ·Jesús A. del Alamo, D.A. Antoniadis, Jianqiang Lin, Wenjie Lu, Alon Vardi, Xin Zhao	2016	57
13	Pulsed-laser transient testing with tunable wavelength and high resolution for high mobility MOSFETs Kai Ni, Andrew L. Sternberg, En Xia Zhang, John A. Kozub, Rong Jiang, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, Michael L. Alles, Jianqiang Lin, Alon Vardi, Jesús A. del Alamo	2016	0
14	III-V MOSFETs for Future CMOS Jesús A. del Alamo, D.A. Antoniadis, Jianqiang Lin, Wenjie Lu, Alon Vardi, Xin Zhao	2015	20
15	InGaAs MOSFETs for CMOS: Recent advances in process technology Jesús A. del Alamo, D.A. Antoniadis, Mohammad Ali Khozeimeh, Do Hyung Kim, Muji Muji, Jianqiang Lin, Wenjie Lu, Alon Vardi, Xin Zhao	2013	39
16	Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots Journal of Applied Physics ·Alon Vardi, G. Bahir, S. E. Schacham, P. Kandaswamy, E. Monroy	2010	5
17	GaN/AlGaN nanostructures for intersubband optoelectronics physica status solidi (a) ·Maria Tchernycheva, Yash Jagtap, L. Nevou, J. Mangeney, F. H. Julien, P. Kandaswamy, Jingyu Zhou, E. Monroy, Alon Vardi, S. E. Schacham, G. Bahir	2010	3
18	Fermi edge singularity observed in GaN/AlGaN heterointerfaces Applied Physics Letters ·N. Akopian, Alon Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, C. R. Elsass, I. P. Smorchkova, James S. Speck	2009	7
19	Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures Applied Physics Letters ·Alon Vardi, G. Bahir, F. Guillot, Catherine Bougerol, E. Monroy, S. E. Schacham, Maria Tchernycheva, F. H. Julien	2008	96
20	Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots physica status solidi (b) ·L. Doyennette, Alon Vardi, F. Guillot, L. Nevou, Maria Tchernycheva, 刘义华, R. Colombelli, G. Bahir, E. Monroy, F. H. Julien	2006	1

About Alon Vardi

Alon Vardi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Spectroscopy, having authored 52 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor Quantum Structures and Devices (16 papers), GaN-based semiconductor devices and materials (14 papers), Nanowire Synthesis and Applications (11 papers), Ga2O3 and related materials (8 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Diamond and Carbon-based Materials Research (6 papers). The work is most often cited by research in Condensed Matter Physics (276 citations), Electrical and Electronic Engineering (719 citations), Atomic and Molecular Physics, and Optics (372 citations), Spectroscopy (121 citations) and Materials Chemistry (265 citations). Alon Vardi has collaborated with scholars based in United States, Israel and France. Frequent co-authors include Jesús A. del Alamo, Xin Zhao, Wenjie Lu, G. Bahir, S. E. Schacham, E. Monroy, F. H. Julien, Maria Tchernycheva, F. Guillot and R. Kalish. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics and physica status solidi (b).

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