L.R. Hite

626 total citations
20 papers, 507 citations indexed

About

L.R. Hite is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, L.R. Hite has authored 20 papers receiving a total of 507 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 1 paper in Mechanics of Materials and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in L.R. Hite's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Radiation Effects in Electronics (7 papers). L.R. Hite is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Radiation Effects in Electronics (7 papers). L.R. Hite collaborates with scholars based in United States. L.R. Hite's co-authors include Hon Wai Lam, G. Pollack, S.D.S. Malhi, R. Sundaresan, H. E. Boesch, A.H. Shah, T.W. Houston, Changxin Chen, P.K. Chatterjee and M. Elahy and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

L.R. Hite

18 papers receiving 481 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L.R. Hite United States 10 488 86 36 35 30 20 507
N. Shigyo Japan 12 494 1.0× 34 0.4× 52 1.4× 76 2.2× 31 1.0× 54 523
Y. Kamigaki Japan 9 355 0.7× 95 1.1× 27 0.8× 32 0.9× 15 0.5× 18 370
A. Schütz Austria 8 347 0.7× 34 0.4× 13 0.4× 33 0.9× 11 0.4× 10 375
P. O’Neil United States 6 249 0.5× 74 0.9× 25 0.7× 59 1.7× 15 0.5× 14 268
I.C. Chen United States 8 696 1.4× 125 1.5× 27 0.8× 44 1.3× 16 0.5× 8 710
L.C. Parrillo United States 10 372 0.8× 38 0.4× 18 0.5× 70 2.0× 10 0.3× 25 385
Toshihiro Sekigawa Japan 9 339 0.7× 46 0.5× 40 1.1× 34 1.0× 39 1.3× 48 353
Chih‐Hong Hwang Taiwan 11 368 0.8× 42 0.5× 47 1.3× 36 1.0× 13 0.4× 29 421
M. Togo Japan 14 599 1.2× 66 0.8× 69 1.9× 62 1.8× 18 0.6× 68 619
W.F. Richardson United States 11 504 1.0× 118 1.4× 51 1.4× 45 1.3× 16 0.5× 24 547

Countries citing papers authored by L.R. Hite

Since Specialization
Citations

This map shows the geographic impact of L.R. Hite's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.R. Hite with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.R. Hite more than expected).

Fields of papers citing papers by L.R. Hite

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.R. Hite. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.R. Hite. The network helps show where L.R. Hite may publish in the future.

Co-authorship network of co-authors of L.R. Hite

This figure shows the co-authorship network connecting the top 25 collaborators of L.R. Hite. A scholar is included among the top collaborators of L.R. Hite based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.R. Hite. L.R. Hite is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Houston, T.W., et al.. (2005). A radiation hardened 1-M bit SRAM on SIMOX material. 7–10.
2.
Hite, L.R., et al.. (2002). A 1-M bit SRAM on SIMOX material. 182–183. 3 indexed citations
3.
Hite, L.R., et al.. (1992). An SEU resistant 256 K SOI SRAM. IEEE Transactions on Nuclear Science. 39(6). 2121–2125. 31 indexed citations
4.
Boesch, H. E., et al.. (1990). Time-dependent hole and electron trapping effects in SIMOX buried oxides. IEEE Transactions on Nuclear Science. 37(6). 1982–1989. 69 indexed citations
5.
Kerns, S.E., L. W. Massengill, D.V. Kerns, et al.. (1989). Model for CMOS/SOI single-event vulnerability. IEEE Transactions on Nuclear Science. 36(6). 2305–2310. 54 indexed citations
6.
Wei, C.C., et al.. (1987). Titanium nitride local interconnect technology for VLSI. IEEE Transactions on Electron Devices. 34(3). 682–688. 33 indexed citations
7.
Mao, B.-Y., Changxin Chen, M. Matloubian, et al.. (1986). Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator. IEEE Transactions on Nuclear Science. 33(6). 1702–1705. 23 indexed citations
8.
Chen, Changxin, M. Matloubian, B.-Y. Mao, et al.. (1986). IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS. IEEE Transactions on Electron Devices. 33(11). 1840–1841. 7 indexed citations
9.
Malhi, S.D.S., et al.. (1986). Overlaid CMOS. Electronics Letters. 22(11). 598–599.
10.
Hite, L.R., et al.. (1985). Transient Radiation Effects in SOI Memories. IEEE Transactions on Nuclear Science. 32(6). 4431–4437. 60 indexed citations
11.
Malhi, S.D.S., H. Shichijo, S. Banerjee, et al.. (1985). Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon. IEEE Journal of Solid-State Circuits. 20(1). 178–201. 19 indexed citations
12.
Hite, L.R., R. Sundaresan, S.D.S. Malhi, et al.. (1985). Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies. IEEE Electron Device Letters. 6(10). 548–550. 4 indexed citations
13.
Malhi, S.D.S., H. Shichijo, S. Banerjee, et al.. (1985). Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon. IEEE Transactions on Electron Devices. 32(2). 258–281. 163 indexed citations
14.
Shah, A.H., L.R. Hite, P.K. Chatterjee, et al.. (1984). A 2 μm Stacked CMOS 64K SRAM. Symposium on VLSI Technology. 8–9. 1 indexed citations
15.
Shichijo, H., S.D.S. Malhi, W.F. Richardson, et al.. (1984). Polysilicon transistors in VLSI MOS memories. 228–231. 3 indexed citations
16.
Houston, T.W., et al.. (1984). Radiation Hardness of a Silicon MESFET 4K x 1 sRAM. IEEE Transactions on Nuclear Science. 31(6). 1483–1486. 6 indexed citations
17.
Chen, Changxin, et al.. (1984). SOI-CMOS 4K SRAM with high dose oxygen implanted substrate. 702–705. 11 indexed citations
18.
Sundaresan, R., S.D.S. Malhi, L.R. Hite, et al.. (1984). A fully self-aligned stacked CMOS 64K SRAM. 871–873. 4 indexed citations
19.
Houston, T.W., et al.. (1983). Total Dose Radiation Effects on Silicon MESFET Circuits. IEEE Transactions on Nuclear Science. 30(6). 4277–4281. 4 indexed citations
20.
Haken, R.A., et al.. (1980). A general purpose 1024-stage electronically programmable transversal filter. IEEE Journal of Solid-State Circuits. 15(6). 984–996. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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