S. Chaudhry

400 total citations
35 papers, 288 citations indexed

About

S. Chaudhry is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Chaudhry has authored 35 papers receiving a total of 288 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Chaudhry's work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Radio Frequency Integrated Circuit Design (13 papers). S. Chaudhry is often cited by papers focused on Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Radio Frequency Integrated Circuit Design (13 papers). S. Chaudhry collaborates with scholars based in United States, Germany and Netherlands. S. Chaudhry's co-authors include Mark E. Law, M. Racanelli, Edward Preisler, V. Blaschke, James Victory, G. Gildenblat, Colin C. McAndrew, Igor Brouk, Weimin Wu and K.K. Bourdelle and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

S. Chaudhry

31 papers receiving 263 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Chaudhry United States 11 271 43 36 19 17 35 288
N. Shigyo Japan 12 494 1.8× 76 1.8× 52 1.4× 34 1.8× 31 1.8× 54 523
Jeffrey B. Johnson United States 12 415 1.5× 41 1.0× 41 1.1× 21 1.1× 32 1.9× 49 431
K. Kanazawa Japan 9 173 0.6× 19 0.4× 32 0.9× 19 1.0× 14 0.8× 31 197
O. Faynot France 9 298 1.1× 24 0.6× 53 1.5× 36 1.9× 10 0.6× 38 323
Yungseon Eo South Korea 12 330 1.2× 36 0.8× 28 0.8× 16 0.8× 40 2.4× 46 349
Thomas A. DeMassa United States 11 393 1.5× 67 1.6× 69 1.9× 32 1.7× 11 0.6× 44 413
Kit Man Cham United States 11 340 1.3× 70 1.6× 59 1.6× 16 0.8× 11 0.6× 34 366
S. Inaba Japan 14 512 1.9× 56 1.3× 57 1.6× 34 1.8× 22 1.3× 54 533
Yong Zhong Xiong Singapore 12 299 1.1× 35 0.8× 38 1.1× 47 2.5× 3 0.2× 35 348
R.C. Booth United Kingdom 9 258 1.0× 122 2.8× 26 0.7× 18 0.9× 16 0.9× 29 289

Countries citing papers authored by S. Chaudhry

Since Specialization
Citations

This map shows the geographic impact of S. Chaudhry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Chaudhry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Chaudhry more than expected).

Fields of papers citing papers by S. Chaudhry

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Chaudhry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Chaudhry. The network helps show where S. Chaudhry may publish in the future.

Co-authorship network of co-authors of S. Chaudhry

This figure shows the co-authorship network connecting the top 25 collaborators of S. Chaudhry. A scholar is included among the top collaborators of S. Chaudhry based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Chaudhry. S. Chaudhry is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Kikuchihara, Hideyuki, et al.. (2024). Modeling of SOI-MOSFET with Trap-Rich Substrate for RF Circuit Design. 1–4.
3.
Jha, Amit, et al.. (2020). A 0.6dB NF, 12dBm IIP3, 4.6-6GHz LNA in 0.13μm Floating-Body SOI CMOS. 121–124. 2 indexed citations
4.
Preisler, Edward, et al.. (2017). SiGe BiCMOS processes for commercial RF front-end-module applications. 1–4. 2 indexed citations
5.
Moen, Kurt A., et al.. (2016). Advances in RF foundry technology for wireless and wireline communications. 5–8. 10 indexed citations
6.
Blaschke, V., et al.. (2013). A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI. 144–146. 8 indexed citations
7.
Blaschke, V., et al.. (2013). A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI. 244–246. 8 indexed citations
8.
Preisler, Edward, et al.. (2012). Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications. 1–4. 3 indexed citations
9.
Brouk, Igor, et al.. (2011). 1/f Noise in Advanced CMOSTransistors. IEEE Instrumentation & Measurement Magazine. 14(1). 14–22. 1 indexed citations
10.
11.
Kar-Roy, A., et al.. (2010). Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7834. 78340R–78340R. 6 indexed citations
12.
Kar-Roy, A., David Howard, Edward Preisler, et al.. (2010). SiGe BiCMOS manufacturing platform for mmWave applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7837. 783707–783707. 2 indexed citations
13.
Zhu, Zhijia, James Victory, S. Chaudhry, et al.. (2009). Improved Parameter Extraction Procedure for PSP-Based MOS Varactor Model. 148–153. 1 indexed citations
14.
Li, Xin, Weimin Wu, Amit Jha, et al.. (2009). Benchmark Tests for MOSFET Compact Models With Application to the PSP Model. IEEE Transactions on Electron Devices. 56(2). 243–251. 29 indexed citations
15.
Li, Xin, Weimin Wu, Amit Jha, et al.. (2007). Benchmarking the PSP Compact Model for MOS Transistors. 11. 259–264. 13 indexed citations
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Bourdelle, K.K., H.-J. Gossmann, S. Chaudhry, & Aditya Agarwal. (2001). The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides. IEEE Electron Device Letters. 22(6). 284–286. 5 indexed citations
19.
Chaudhry, S. & Mark E. Law. (1997). The stress assisted evolution of point and extended defects in silicon. Journal of Applied Physics. 82(3). 1138–1146. 23 indexed citations
20.
Chaudhry, S. & Mark E. Law. (1994). Effects of Low Dose Silicon, Carbon, and Oxygen Implantation Damage on Diffusion of Phosphorus in Silicon. Journal of The Electrochemical Society. 141(12). 3516–3521. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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