A. T. Macrander

1.1k citations

40 papers · 823 indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Radiation top 5%
- X-ray Spectroscopy and Fluorescence Analysis

Papers in

Radiation 11
- Advanced X-ray Imaging Techniques 7
- X-ray Spectroscopy and Fluorescence Analysis 6
Surfaces, Coatings and Films 6

Co-authors: V. Swaminathan D. A. Arms M. Schwoerer‐Böhning K. E. Strege G. P. Schwartz Dwight W. Berreman G. J. Gualtieri M. B. Panish
Journals: Journal of Applied Physics (6 papers)Physical review. B, Condensed matter (5 papers)Applied Physics Letters (3 papers)Physical Review B (3 papers)Review of Scientific Instruments (3 papers)
Partner nations: United States Finland China

In The Last Decade

A. T. Macrander

37 papers receiving 781 citations

Peers

Countries citing papers authored by A. T. Macrander

Since Specialization

Citations

This map shows the geographic impact of A. T. Macrander's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. T. Macrander with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. T. Macrander more than expected).

Fields of papers citing papers by A. T. Macrander

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. T. Macrander. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. T. Macrander. The network helps show where A. T. Macrander may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. T. Macrander, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. T. Macrander Line = papers co-authored together A. T. Macrander links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Exciton spectroscopy of hexagonal boron nitride using nonresonant x-ray Raman scattering Physical Review B ·Yejun Feng, J. A. Soininen, A. L. Ankudinov, J. O. Cross, Gerald T. Seidler, A. T. Macrander, J. J. Rehr, Eric L. Shirley	2008	27
2	Stress Mitigation of X-ray Beamline Monochromators using a Topography Test Unit Advances in X-ray Analysis ·A R Seidel, INDIRA DHARAVATH, P. M. Baldo, A. T. Macrander, V. Connell, Rong Huang, J. Bossers-Cnossen, A Olajitan	2007	0
3	Etching methods for improving surface imperfections of diamonds used for x-ray monochromators. Advances in X-ray Analysis ·A R Seidel, A. T. Macrander, INDIRA DHARAVATH, Szczesny Kraśnicki, Yuncheng Zhong, Фольмер Сергей Владимирович, Yong S. Chu, R.A. Erck, John Woodford, Guo Jun Hu	2005	1
4	Bragg-case limited projection topography study of surface damage in diamond-crystal plates Journal of Physics D Applied Physics ·Yuncheng Zhong, Szczesny Kraśnicki, A. T. Macrander, Yong S. Chu, A R Seidel	2005	7
5	Inelastic x-ray scattering from6H−SiC Physical review. B, Condensed matter ·P. A. Montano, David L. Price, A. T. Macrander, Bernard R. Cooper	2002	5
6	Exciton Dispersion and Electronic Excitations in hcpH4e Physical Review Letters ·D. A. Arms, R. O. Simmons, M. Schwoerer‐Böhning, A. T. Macrander, Tim Graber	2001	14
7	Inelastic X-ray scattering study of Cr(110): from low momentum transfer to the Compton scattering limit Journal of Physics and Chemistry of Solids ·P. A. Montano, A. T. Macrander	2000	2
8	Performance of spherically focusing Ge(444) backscattering analyzers for inelastic x-ray scattering Review of Scientific Instruments ·A. T. Macrander, Guangxiong Li, Farshad Khamchin Moghaddam	1995	6
9	Prototype grooved and spherically bent Si backscattering crystal analyzer for meV resolution inelastic x-ray scattering Review of Scientific Instruments ·Farshad Khamchin Moghaddam, A. T. Macrander	1995	4
10	Materials aspects of GaAs and InP based structures Prentice-Hall, Inc eBooks ·V. Swaminathan, A. T. Macrander	1991	194
11	Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures Physical review. B, Condensed matter ·J. M. Vandenberg, A. T. Macrander, R. A. Hamm, M. B. Panish	1991	42
12	GaAs-on-Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high-performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators Journal of Applied Physics ·Naresh Chand, F. Ren, A. T. Macrander, J. P. van der Ziel, A. M. Sergent, R. Hull, S. N. G. Chu, J. M. REHBERGER, D. V. Lang	1990	48
13	Proceedings of the Symposium on Heteroepitaxial Approaches in Semiconductors : Lattice Mismatch and Its Consequences Electrochemical Society eBooks ·DIARRA Ouncoumba, A. T. Macrander, T. J. Drummond	1989	1
14	X-ray and Raman scattering measurements in finite, pseudomorphically strained, Fibonacci lattices Physical review. B, Condensed matter ·A. T. Macrander, G. P. Schwartz, J. Bevk	1988	8
15	Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si Journal of Applied Physics ·R. M. Lum, J. K. Klingert, R. B. Bylsma, A. M. Glass, A. T. Macrander, T.D. Harris, M. G. Lamont	1988	31
16	Dynamic Theory of Asymetric X-Ray Diffraction for Strained Crystal Wafers Advances in X-ray Analysis ·Dwight W. Berreman, A. T. Macrander	1987	1
17	Dynamical X-Ray Diffraction Simulations for Asymmetric Reflections for III-V Semiconductors Multilayers Advances in X-ray Analysis ·A. T. Macrander, Dwight W. Berreman, 幸夫鳥居	1987	1
18	Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition Journal of Electronic Materials ·Russell D. Dupuis, J. C. Bean, Judith M. Brown, A. T. Macrander, Robert C. Miller, L. C. Hopkins	1987	31
19	Correlation between background carrier concentration and x-ray linewidth for InGaAs/InP grown by vapor phase epitaxy Applied Physics Letters ·A. T. Macrander, S. N. G. Chu, K. E. Strege, Kim Bunning, W. D. Johnston	1984	16
20	Tetragonal Distortion in VPE and LPE In_1-xGa_xAs Grown on (100) Inp MRS Proceedings ·A. T. Macrander, S. N. G. Chu	1983	2

About A. T. Macrander

A. T. Macrander is a scholar working on Radiation, Surfaces, Coatings and Films, Structural Biology, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 40 papers that have together received 823 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (10 papers), Diamond and Carbon-based Materials Research (7 papers), Advanced X-ray Imaging Techniques (7 papers), X-ray Spectroscopy and Fluorescence Analysis (6 papers), Semiconductor materials and interfaces (5 papers), X-ray Diffraction in Crystallography (5 papers), Advanced Semiconductor Detectors and Materials (5 papers) and Liquid Crystal Research Advancements (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (513 citations), Radiation (97 citations), Condensed Matter Physics (124 citations), Surfaces, Coatings and Films (60 citations) and Electrical and Electronic Engineering (441 citations). A. T. Macrander has collaborated with scholars based in United States, Finland and China. Frequent co-authors include V. Swaminathan, D. A. Arms, M. Schwoerer‐Böhning, K. E. Strege, G. P. Schwartz, Dwight W. Berreman, G. J. Gualtieri, M. B. Panish, R. A. Hamm and J. M. Vandenberg. Their work appears in journals such as Journal of Applied Physics, Physical review. B, Condensed matter, Applied Physics Letters, Physical Review B and Review of Scientific Instruments.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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