G. P. Schwartz

2.4k total citations
90 papers, 2.0k citations indexed

About

G. P. Schwartz is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, G. P. Schwartz has authored 90 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Atomic and Molecular Physics, and Optics, 57 papers in Electrical and Electronic Engineering and 31 papers in Materials Chemistry. Recurrent topics in G. P. Schwartz's work include Semiconductor materials and devices (35 papers), Semiconductor Quantum Structures and Devices (27 papers) and Semiconductor materials and interfaces (22 papers). G. P. Schwartz is often cited by papers focused on Semiconductor materials and devices (35 papers), Semiconductor Quantum Structures and Devices (27 papers) and Semiconductor materials and interfaces (22 papers). G. P. Schwartz collaborates with scholars based in United States, Germany and Italy. G. P. Schwartz's co-authors include G. J. Gualtieri, B. Schwartz, James E. Griffiths, Lawrence H. Dubois, W. A. Sunder, C. D. Thurmond, G. W. Kammlott, V. E. Bondybey, Ralph G. Nuzzo and Muhammad Shah Jahan and has published in prestigious journals such as Nature Communications, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

G. P. Schwartz

88 papers receiving 1.9k citations

Peers

Countries citing papers authored by G. P. Schwartz

Since Specialization

Citations

This map shows the geographic impact of G. P. Schwartz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. P. Schwartz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. P. Schwartz more than expected).

Fields of papers citing papers by G. P. Schwartz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. P. Schwartz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. P. Schwartz. The network helps show where G. P. Schwartz may publish in the future.

Co-authorship network of co-authors of G. P. Schwartz

This figure shows the co-authorship network connecting the top 25 collaborators of G. P. Schwartz. A scholar is included among the top collaborators of G. P. Schwartz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. P. Schwartz. G. P. Schwartz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Quantum simulation of spin-boson models with structured bath 2025 ·Nature Communications ·(unknown), (unknown), (unknown), G. P. Schwartz, David N. Beratan, Kenneth R. Brown, Jungsang Kim	7
2	Combined chemical and mechanical effects on free radicals in UHMWPE joints during implantation 1991 ·Journal of Biomedical Materials Research ·Muhammad Shah Jahan, (unknown), G. P. Schwartz, J. A. Davidson	94
3	Raman scattering study of the high-pressure oxidation of InP 1989 ·Journal of Applied Physics ·G. P. Schwartz, U. K. Chakrabarti, R.A. Laudise, (unknown)	2
4	Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system 1989 ·Physical review. B, Condensed matter ·G. P. Schwartz, Mark S. Hybertsen, J. Bevk, Ralph G. Nuzzo, J. P. Mannáerts, G. J. Gualtieri	77
5	X-ray and Raman scattering measurements in finite, pseudomorphically strained, Fibonacci lattices 1988 ·Physical review. B, Condensed matter ·A. T. Macrander, G. P. Schwartz, J. Bevk	8
6	Response to ‘‘Comment on ‘X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity’ ’’[Appl. Phys. Lett. 5 0, 1763 (1987)] 1987 ·Applied Physics Letters ·G. J. Gualtieri, G. P. Schwartz, Ralph G. Nuzzo, W. A. Sunder	1
7	Use of a high density lead glass tubing projection chamber in positron emission tomography and in high energy physics 1987 ·Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·Maurizio Conti, A. Del Guerra, R. Habel, T. Mulera, V. Perez-Mendez, G. P. Schwartz	4
8	Summary Abstract: Valence-band discontinuities in (100) GaSb/AlSb and GaSb/InAs heterojunctions 1987 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·G. J. Gualtieri, Ralph G. Nuzzo, R. J. Malik, (unknown), L. C. Feldman, W. A. Sunder, G. P. Schwartz	13
9	Production and characterization of some mixed Group V A dimers in solid neon 1986 ·The Journal of Chemical Physics ·Markku Räsänen, L. A. Heimbrook, G. P. Schwartz, V. E. Bondybey	17
10	Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP 1986 ·Journal of The Electrochemical Society ·G. P. Schwartz, G. J. Gualtieri, W. A. Bonner	12
11	Schottky Barrier Height Enhancement on M‐P+‐N Structures Including Free‐Carriers 1986 ·Journal of The Electrochemical Society ·G. P. Schwartz, G. J. Gualtieri	24
12	HISPET project: state-of-the-art 1984 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·A. Del Guerra, G.K. Lum, V. Perez-Mendez, G. P. Schwartz	1
13	Inelastic scattering of electrons from ionic crystals with a highly conducting overlayer 1984 ·Physical review. B, Condensed matter ·Lawrence H. Dubois, G. P. Schwartz, R. E. Camley, D. L. Mills	55
14	Thermal oxidation of InAsxP1−x 1984 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·G. P. Schwartz, (unknown), G. J. Gualtieri	5
15	FURTHER IMPROVEMENTS IN THE DESIGN OF A POSITRON CAMERA WITH DENSE DRIFT SPACE MWPC's 1983 ·Nuclear Instruments and Methods ·V. Perez-Mendez, W.R. Nelson, G. P. Schwartz, R. Bellazzini, A. Del Guerra, M.M. Massai, G. Spandre	1
16	Evaluation of aluminum-GaAs Schottky barriers using Norde’s modified current-voltage analysis 1983 ·Applied Physics Letters ·G. P. Schwartz, G. J. Gualtieri	3
17	Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaP 1982 ·Physical review. B, Condensed matter ·Lawrence H. Dubois, G. P. Schwartz	128
18	Elemental arsenic in native oxide films on AlxGa1−xAs 1981 ·Applied Physics Letters ·G. P. Schwartz, B. V. Dutt, G. J. Gualtieri	15
19	Interfacial Arsenic Growth in Anodic Oxide / GaAs Structures 1981 ·Journal of The Electrochemical Society ·G. P. Schwartz, G. J. Gualtieri, James E. Griffiths, B. Schwartz	15
20	<title>Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors</title> 1981 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·G. P. Schwartz	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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