K. E. Strege

638 total citations
18 papers, 508 citations indexed

About

K. E. Strege is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, K. E. Strege has authored 18 papers receiving a total of 508 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 2 papers in Mechanical Engineering. Recurrent topics in K. E. Strege's work include Semiconductor Quantum Structures and Devices (13 papers), Photonic and Optical Devices (10 papers) and Semiconductor Lasers and Optical Devices (10 papers). K. E. Strege is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Photonic and Optical Devices (10 papers) and Semiconductor Lasers and Optical Devices (10 papers). K. E. Strege collaborates with scholars based in United States. K. E. Strege's co-authors include W. D. Johnston, S. N. G. Chu, Albert T. Macrander, A. T. Macrander, S. Nakahara, L.A. Coldren, R. F. Karlicek, V. M. Donnelly, Peter Heimann and Todd R. Hayes and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

K. E. Strege

17 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. E. Strege United States 11 358 343 116 50 45 18 508
M. Ospelt Switzerland 15 334 0.9× 437 1.3× 125 1.1× 89 1.8× 48 1.1× 24 545
Robert G. Long United States 10 342 1.0× 476 1.4× 118 1.0× 49 1.0× 31 0.7× 17 560
M. A. G. Halliwell United Kingdom 13 397 1.1× 453 1.3× 238 2.1× 58 1.2× 89 2.0× 32 648
T. R. Cass United States 11 301 0.8× 163 0.5× 121 1.0× 35 0.7× 26 0.6× 20 365
Seijiro Furukawa Japan 14 429 1.2× 207 0.6× 227 2.0× 61 1.2× 50 1.1× 37 560
K. Asai Japan 12 399 1.1× 180 0.5× 115 1.0× 31 0.6× 87 1.9× 47 517
E. Lugujjo United States 10 360 1.0× 212 0.6× 217 1.9× 85 1.7× 39 0.9× 15 539
W. Nijman Netherlands 8 245 0.7× 246 0.7× 100 0.9× 30 0.6× 37 0.8× 12 347
D.L. Barrett United States 14 548 1.5× 194 0.6× 126 1.1× 30 0.6× 56 1.2× 34 632
Akihiro Moritani Japan 13 472 1.3× 245 0.7× 194 1.7× 126 2.5× 36 0.8× 58 623

Countries citing papers authored by K. E. Strege

Since Specialization
Citations

This map shows the geographic impact of K. E. Strege's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. E. Strege with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. E. Strege more than expected).

Fields of papers citing papers by K. E. Strege

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. E. Strege. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. E. Strege. The network helps show where K. E. Strege may publish in the future.

Co-authorship network of co-authors of K. E. Strege

This figure shows the co-authorship network connecting the top 25 collaborators of K. E. Strege. A scholar is included among the top collaborators of K. E. Strege based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. E. Strege. K. E. Strege is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Hayes, Todd R., Peter Heimann, V. M. Donnelly, & K. E. Strege. (1990). Maskless laser interferometric monitoring of InP/InGaAsP heterostructure reactive ion etching. Applied Physics Letters. 57(26). 2817–2819. 29 indexed citations
2.
Twu, Y., et al.. (1990). Long-cavity, multi-electrode DFB lasers for coherent FSK systems. Electronics Letters. 26(11). 708–710. 3 indexed citations
3.
Zilko, J. L., L.J.P. Ketelsen, Y. Twu, et al.. (1989). Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers. IEEE Journal of Quantum Electronics. 25(10). 2091–2095. 42 indexed citations
4.
Temkin, H., R. A. Logan, R. F. Karlicek, et al.. (1988). High-speed distributed feedback lasers grown by hydride epitaxy. Applied Physics Letters. 53(13). 1156–1158. 21 indexed citations
5.
Macrander, A. T., Stanley C. K. Lau, K. E. Strege, & S. N. G. Chu. (1988). Nondestructive measurement of layer thicknesses in double heterostructures by x-ray diffraction. Applied Physics Letters. 52(23). 1985–1986. 22 indexed citations
6.
Logan, R. A., H. Temkin, J. Blaha, & K. E. Strege. (1987). Reproducible liquid phase epitaxial growth of InGaAsP buried heterostructure lasers. Applied Physics Letters. 51(18). 1407–1409. 3 indexed citations
7.
8.
Macrander, A. T. & K. E. Strege. (1986). X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxy. Journal of Applied Physics. 59(2). 442–446. 42 indexed citations
9.
Chu, S. N. G., F. A. Stevie, Albert T. Macrander, et al.. (1985). Gallium Contamination of InP Epitaxial Layers in InP / InGaAsP Multilayer Structures Grown by Hydride Transport Vapor Phase Epitaxy. Journal of The Electrochemical Society. 132(5). 1187–1193. 5 indexed citations
10.
Chu, S. N. G., Albert T. Macrander, K. E. Strege, & W. D. Johnston. (1985). Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy. Journal of Applied Physics. 57(2). 249–257. 148 indexed citations
11.
Chu, S. N. G., S. Nakahara, K. E. Strege, & W. D. Johnston. (1985). Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor-phase epitaxy. Journal of Applied Physics. 57(10). 4610–4615. 72 indexed citations
12.
Deimel, P., Jin Cheng, Stephen R. Forrest, et al.. (1985). Electrical and optical integration of a monolithic 1×12 array of InGaAsP/InP (λ=1.3-µm) light-emitting diodes. TUC4–TUC4. 1 indexed citations
13.
Macrander, Albert T. & K. E. Strege. (1985). X-RAY MONITORING OF InGaAsP LAYERS GROWN BY VAPOR PHASE EPITAXY. MRS Proceedings. 56. 1 indexed citations
14.
Macrander, A. T., et al.. (1984). Correlation between background carrier concentration and x-ray linewidth for InGaAs/InP grown by vapor phase epitaxy. Applied Physics Letters. 44(6). 615–617. 16 indexed citations
15.
Wilt, D. P., R. F. Karlicek, K. E. Strege, et al.. (1984). Channelled-substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth. Journal of Applied Physics. 56(3). 710–712. 23 indexed citations
16.
Coldren, L.A., et al.. (1981). Refractive index data from Ga x In 1− x As y P 1− y films. Electronics Letters. 17(1). 6–7. 55 indexed citations
17.
Chu, S. N. G., S. Mahajan, K. E. Strege, W. D. Johnston, & A. A. Ballman. (1981). Reduction of threading dislocations in iso-epitaxial layers grown on (001) InP substrates by misfit stresses. Applied Physics Letters. 38(10). 766–768. 7 indexed citations
18.
Johnston, W. D. & K. E. Strege. (1980). TP-B3 uniformly low-threshold diode lasers at 1.5-1.55 µm from VPE In1-xGaxAsyP1-ymaterial. IEEE Transactions on Electron Devices. 27(11). 2191–2191. 1 indexed citations

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