S. Senkader

703 total citations
30 papers, 566 citations indexed

About

S. Senkader is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Senkader has authored 30 papers receiving a total of 566 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in S. Senkader's work include Silicon and Solar Cell Technologies (25 papers), Semiconductor materials and interfaces (17 papers) and Thin-Film Transistor Technologies (12 papers). S. Senkader is often cited by papers focused on Silicon and Solar Cell Technologies (25 papers), Semiconductor materials and interfaces (17 papers) and Thin-Film Transistor Technologies (12 papers). S. Senkader collaborates with scholars based in United Kingdom, Austria and United States. S. Senkader's co-authors include C. David Wright, Peter R. Wilshaw, R. Falster, A. Giannattasio, G. Hobler, John D. Murphy, K. Jurkschat, Christian Schmeiser, B. Murphy and Kanad Mallik and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. Senkader

30 papers receiving 544 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Senkader United Kingdom 13 485 303 177 115 44 30 566
G.F. Derbenwick United States 13 629 1.3× 238 0.8× 97 0.5× 78 0.7× 47 1.1× 24 689
Howard R. Huff United States 19 1.1k 2.3× 347 1.1× 201 1.1× 109 0.9× 80 1.8× 92 1.2k
Xiaoshuang Chen China 13 378 0.8× 306 1.0× 102 0.6× 53 0.5× 60 1.4× 47 517
Badih El-Kareh United States 12 497 1.0× 140 0.5× 70 0.4× 90 0.8× 63 1.4× 30 588
Chuyu Zhong China 15 359 0.7× 242 0.8× 185 1.0× 126 1.1× 59 1.3× 40 645
Y. Arimoto Japan 12 876 1.8× 318 1.0× 96 0.5× 247 2.1× 77 1.8× 67 1.1k
V. V. Kirienko Russia 14 337 0.7× 321 1.1× 291 1.6× 159 1.4× 61 1.4× 62 543
J. Zesch United States 11 378 0.8× 305 1.0× 87 0.5× 78 0.7× 14 0.3× 19 473
Takasumi Ohyanagi Japan 13 376 0.8× 220 0.7× 108 0.6× 24 0.2× 54 1.2× 43 440
A. Kalnitsky United States 13 529 1.1× 186 0.6× 112 0.6× 92 0.8× 50 1.1× 47 602

Countries citing papers authored by S. Senkader

Since Specialization
Citations

This map shows the geographic impact of S. Senkader's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Senkader with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Senkader more than expected).

Fields of papers citing papers by S. Senkader

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Senkader. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Senkader. The network helps show where S. Senkader may publish in the future.

Co-authorship network of co-authors of S. Senkader

This figure shows the co-authorship network connecting the top 25 collaborators of S. Senkader. A scholar is included among the top collaborators of S. Senkader based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Senkader. S. Senkader is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fraser, Keith, et al.. (2007). The role of dislocations in producing efficient near‐bandgap luminescence from silicon. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(8). 2977–2980. 2 indexed citations
2.
Murphy, John D., et al.. (2006). Nitrogen in silicon: Transport and mechanical properties. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 253(1-2). 113–117. 16 indexed citations
3.
Murphy, John D., et al.. (2006). Enhanced oxygen diffusion in highly doped p-type Czochralski silicon. Journal of Applied Physics. 100(10). 15 indexed citations
4.
Murphy, John D., A. Giannattasio, S. Senkader, et al.. (2006). Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties. ECS Transactions. 3(4). 239–253. 3 indexed citations
5.
Murphy, John D., A. Giannattasio, S. Senkader, R. Falster, & Peter R. Wilshaw. (2005). Nitrogen transport in float‐zone and Czochralski silicon investigated by dislocation locking experiments. physica status solidi (a). 202(5). 926–930. 8 indexed citations
6.
Giannattasio, A., John D. Murphy, S. Senkader, R. Falster, & Peter R. Wilshaw. (2005). Oxygen and Nitrogen Transport in Silicon Investigated by Dislocation Locking Experiments. Journal of The Electrochemical Society. 152(6). G460–G460. 22 indexed citations
7.
Giannattasio, A., S. Senkader, R. Falster, & Peter R. Wilshaw. (2004). The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon. Computational Materials Science. 30(1-2). 131–136. 5 indexed citations
8.
Senkader, S., A. Giannattasio, R. Falster, & Peter R. Wilshaw. (2003). Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 43–52. 15 indexed citations
9.
Giannattasio, A., S. Senkader, R. Falster, & Peter R. Wilshaw. (2003). Dislocation locking by nitrogen impurities in FZ-silicon. Physica B Condensed Matter. 340-342. 996–1000. 21 indexed citations
10.
Senkader, S., et al.. (2003). Near-band gap luminescence at room temperature from dislocations in silicon. Physica B Condensed Matter. 340-342. 710–713. 15 indexed citations
11.
Wright, C. David, et al.. (2003). Understanding the electrothermal processes involved in probe storage on phase-change media. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5069. 150–150. 4 indexed citations
12.
Giannattasio, A., et al.. (2003). The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers. Microelectronic Engineering. 70(1). 125–130. 10 indexed citations
13.
Wright, C. David, M. Armand, Mustafa M. Aziz, S. Senkader, & Wennian Yu. (2003). Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications. MRS Proceedings. 803. 3 indexed citations
14.
Giannattasio, A., S. Senkader, R. Falster, & Peter R. Wilshaw. (2002). Generation of dislocation glide loops in Czochralski silicon. Journal of Physics Condensed Matter. 14(48). 12981–12987. 12 indexed citations
15.
Senkader, S., A. Giannattasio, R. Falster, & Peter R. Wilshaw. (2002). On the dislocation oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures. Journal of Physics Condensed Matter. 14(48). 13141–13145. 8 indexed citations
16.
Senkader, S., Peter R. Wilshaw, & R. Falster. (2001). Oxygen-dislocation interactions in silicon at temperatures below 700 °C: Dislocation locking and oxygen diffusion. Journal of Applied Physics. 89(9). 4803–4808. 52 indexed citations
17.
Senkader, S., K. Jurkschat, Peter R. Wilshaw, & R. Falster. (2000). A study of oxygen dislocation interactions in CZ-Si. Materials Science and Engineering B. 73(1-3). 111–115. 4 indexed citations
18.
Senkader, S., et al.. (1999). The Segregation Behaviour of Oxygen at Dislocations in Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 321–326. 2 indexed citations
19.
Schmeiser, Christian, et al.. (1996). Computer Simulation of Oxygen Precipitation in Czochralski‐Grown Silicon during HI‐LO‐HI Anneals. Journal of The Electrochemical Society. 143(3). 995–1001. 24 indexed citations
20.
Senkader, S., et al.. (1995). A model for oxygen precipitation in silicon including bulk stacking fault growth. Journal of Applied Physics. 78(11). 6469–6476. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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