Marta Sobańska

734 total citations
52 papers, 597 citations indexed

About

Marta Sobańska is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Marta Sobańska has authored 52 papers receiving a total of 597 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Condensed Matter Physics, 23 papers in Electronic, Optical and Magnetic Materials and 20 papers in Electrical and Electronic Engineering. Recurrent topics in Marta Sobańska's work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (16 papers). Marta Sobańska is often cited by papers focused on GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (16 papers). Marta Sobańska collaborates with scholars based in Poland, Germany and United States. Marta Sobańska's co-authors include Z. R. Żytkiewicz, K. Kłosek, A. Wierzbicka, J. Borysiuk, A. Reszka, K.P. Korona, Sylwia Gierałtowska, E. Łusakowska, S. Kret and R. Kudrawiec and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Carbon.

In The Last Decade

Marta Sobańska

51 papers receiving 590 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Marta Sobańska Poland 15 423 328 266 218 186 52 597
K. Kłosek Poland 13 363 0.9× 273 0.8× 232 0.9× 175 0.8× 147 0.8× 35 493
M. Korytov France 14 350 0.8× 311 0.9× 267 1.0× 174 0.8× 122 0.7× 44 560
S. B. Thapa Germany 14 368 0.9× 273 0.8× 201 0.8× 203 0.9× 100 0.5× 26 522
Christian Nenstiel Germany 14 393 0.9× 405 1.2× 318 1.2× 311 1.4× 106 0.6× 21 669
Z. L. Xie China 14 412 1.0× 280 0.9× 259 1.0× 161 0.7× 114 0.6× 52 552
Guijuan Zhao China 12 293 0.7× 308 0.9× 163 0.6× 128 0.6× 89 0.5× 54 478
Brendan Gunning United States 17 569 1.3× 215 0.7× 245 0.9× 366 1.7× 127 0.7× 47 684
Kentaro Nagamatsu Japan 15 522 1.2× 262 0.8× 283 1.1× 322 1.5× 110 0.6× 44 676
Vitaly Z. Zubialevich Ireland 14 421 1.0× 228 0.7× 251 0.9× 192 0.9× 127 0.7× 70 552
Christian Hauswald Germany 14 370 0.9× 280 0.9× 227 0.9× 140 0.6× 170 0.9× 21 509

Countries citing papers authored by Marta Sobańska

Since Specialization
Citations

This map shows the geographic impact of Marta Sobańska's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Marta Sobańska with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Marta Sobańska more than expected).

Fields of papers citing papers by Marta Sobańska

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Marta Sobańska. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Marta Sobańska. The network helps show where Marta Sobańska may publish in the future.

Co-authorship network of co-authors of Marta Sobańska

This figure shows the co-authorship network connecting the top 25 collaborators of Marta Sobańska. A scholar is included among the top collaborators of Marta Sobańska based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Marta Sobańska. Marta Sobańska is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yatskiv, Roman, et al.. (2025). ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires. Nanoscale. 17(13). 8111–8117.
2.
Zielony, E., Marta Sobańska, A. Reszka, et al.. (2024). Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells. Small. 20(44). e2401139–e2401139. 4 indexed citations
3.
Łapiński, Marcin, Jakub Karczewski, Marta Sobańska, et al.. (2023). Thermal Instability of Gold Thin Films. Coatings. 13(8). 1306–1306. 4 indexed citations
4.
Sobańska, Marta, et al.. (2023). Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers. Nanomaterials. 13(18). 2587–2587. 1 indexed citations
5.
Zielony, E., et al.. (2022). Strain and lattice vibration mechanisms in GaN-AlxGa1-xN nanowire structures on Si substrate. Applied Surface Science. 588. 152901–152901. 10 indexed citations
6.
Grzonka, Justyna, Aleksandra Krajewska, Aleksandra Przewłoka, et al.. (2021). Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects. Beilstein Journal of Nanotechnology. 12. 566–577. 3 indexed citations
7.
Korona, K.P., et al.. (2020). GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon. Materials. 13(21). 4755–4755. 4 indexed citations
8.
Ławniczak‐Jabłońska, K., et al.. (2020). Chemical bonding of nitrogen formed by nitridation of crystalline and amorphous aluminum oxide studied by X-ray photoelectron spectroscopy. RSC Advances. 10(47). 27932–27939. 21 indexed citations
9.
Sobańska, Marta, Z. R. Żytkiewicz, K. Kłosek, et al.. (2020). Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer. Nanotechnology. 31(18). 184001–184001. 9 indexed citations
10.
Stanchu, Hryhorii, Matthias Auf der Maur, Yu. I. Mazur, et al.. (2020). Compositionally Graded AlGaN Nanostructures: Strain Distribution and X-ray Diffraction Reciprocal Space Mapping. Crystal Growth & Design. 20(3). 1543–1551. 7 indexed citations
11.
Sobańska, Marta, Z. R. Żytkiewicz, Gabriele Calabrese, Lutz Geelhaar, & Sergio Fernández‐Garrido. (2019). Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies. Nanotechnology. 30(15). 154002–154002. 11 indexed citations
12.
Korona, K.P., et al.. (2018). Reflectance and fast polarization dynamics of a GaN/Si nanowire ensemble. Journal of Physics Condensed Matter. 30(31). 315301–315301. 6 indexed citations
13.
Gładysiewicz, M., J. Misiewicz, Marta Sobańska, et al.. (2016). GaN(cap)/AlGaN/GaNヘテロ構造における電界分布のエンジニアリング:理論的・実験的検討. Journal of Physics D Applied Physics. 49(34). 1–9. 4 indexed citations
14.
Sobańska, Marta, Sergio Fernández‐Garrido, Z. R. Żytkiewicz, et al.. (2016). Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles. Nanotechnology. 27(32). 325601–325601. 21 indexed citations
15.
Stanchu, Hryhorii, V.P. Kladko, A. E. Belyaev, et al.. (2015). High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate. Nanoscale Research Letters. 10(1). 51–51. 20 indexed citations
16.
Borysiuk, J., Z. R. Żytkiewicz, Marta Sobańska, et al.. (2014). Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate. Nanotechnology. 25(13). 135610–135610. 31 indexed citations
17.
Sobańska, Marta, K. Kłosek, J. Borysiuk, et al.. (2014). Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 115(4). 22 indexed citations
18.
Sobańska, Marta, et al.. (2012). Electrical characterisation of GaN and AlGaN layers grown by plasma‐assisted MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 1043–1047. 5 indexed citations
19.
Wierzbicka, A., Z. R. Żytkiewicz, S. Kret, et al.. (2012). Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate. Nanotechnology. 24(3). 35703–35703. 70 indexed citations
20.
Wawro, A., et al.. (2010). Self-assembled growth of Au islands on a Mo(110) surface. Nanotechnology. 21(33). 335606–335606. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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