K. E. Aretouli

576 total citations
11 papers, 473 citations indexed

About

K. E. Aretouli is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, K. E. Aretouli has authored 11 papers receiving a total of 473 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Materials Chemistry, 4 papers in Electrical and Electronic Engineering and 3 papers in Condensed Matter Physics. Recurrent topics in K. E. Aretouli's work include Graphene research and applications (6 papers), 2D Materials and Applications (6 papers) and MXene and MAX Phase Materials (3 papers). K. E. Aretouli is often cited by papers focused on Graphene research and applications (6 papers), 2D Materials and Applications (6 papers) and MXene and MAX Phase Materials (3 papers). K. E. Aretouli collaborates with scholars based in Greece, France and United States. K. E. Aretouli's co-authors include Polychronis Tsipas, A. Dimoulas, Dimitra Tsoutsou, Sigiava Aminalragia Giamini, Jose Marquez‐Velasco, Evangelia Xenogiannopoulou, Nikolaos Kelaidis, Vassilis Psycharis, Calliope Bazioti and Ph. Komninou and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

K. E. Aretouli

10 papers receiving 466 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K. E. Aretouli Greece	8	424	246	54	48	44	11	473
Debtanu De United States	6	470 1.1×	307 1.2×	78 1.4×	29 0.6×	27 0.6×	8	530
T. Abe Japan	10	377 0.9×	348 1.4×	45 0.8×	72 1.5×	25 0.6×	27	423
Tzu-Pei Chen Taiwan	8	289 0.7×	302 1.2×	44 0.8×	48 1.0×	28 0.6×	8	361
Sandhaya Koirala Japan	8	315 0.7×	190 0.8×	36 0.7×	78 1.6×	22 0.5×	8	342
James P. Parry United States	5	428 1.0×	201 0.8×	141 2.6×	93 1.9×	23 0.5×	8	462
Muhammad Sheraz Khan China	12	335 0.8×	211 0.9×	32 0.6×	123 2.6×	23 0.5×	36	385
Mohammed Sayyad United States	9	515 1.2×	297 1.2×	91 1.7×	65 1.4×	50 1.1×	25	564
Abhay Shukla France	8	292 0.7×	189 0.8×	41 0.8×	55 1.1×	10 0.2×	11	344
Puqin Zhao China	7	442 1.0×	225 0.9×	138 2.6×	117 2.4×	19 0.4×	13	500
Nilanthy Balakrishnan United Kingdom	9	438 1.0×	371 1.5×	82 1.5×	44 0.9×	17 0.4×	20	504

Countries citing papers authored by K. E. Aretouli

Since Specialization

Citations

This map shows the geographic impact of K. E. Aretouli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. E. Aretouli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. E. Aretouli more than expected).

Fields of papers citing papers by K. E. Aretouli

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. E. Aretouli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. E. Aretouli. The network helps show where K. E. Aretouli may publish in the future.

Co-authorship network of co-authors of K. E. Aretouli

This figure shows the co-authorship network connecting the top 25 collaborators of K. E. Aretouli. A scholar is included among the top collaborators of K. E. Aretouli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. E. Aretouli. K. E. Aretouli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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11 of 11 papers shown

Tsipas, Polychronis, Sigiava Aminalragia Giamini, Jose Marquez‐Velasco, et al.. (2016). Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene‐Encapsulated Gates. Advanced Electronic Materials. 2(4). 9 indexed citations

Aminalragia‐Giamini, Sigiava, Jose Marquez‐Velasco, I. Sakellis, et al.. (2016). Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature. Applied Surface Science. 385. 554–561. 12 indexed citations

Aretouli, K. E., Dimitra Tsoutsou, Polychronis Tsipas, et al.. (2016). Epitaxial 2D SnSe₂/ 2D WSe₂ van der Waals Heterostructures. ACS Applied Materials & Interfaces. 8(35). 23222–23229. 98 indexed citations

Tsipas, Polychronis, Sigiava Aminalragia Giamini, Jose Marquez‐Velasco, et al.. (2016). Quantum Capacitance: Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene‐Encapsulated Gates (Adv. Electron. Mater. 4/2016). Advanced Electronic Materials. 2(4).

Tsoutsou, Dimitra, K. E. Aretouli, Polychronis Tsipas, et al.. (2016). Epitaxial 2D MoSe₂ (HfSe₂) Semiconductor/2D TaSe₂ Metal van der Waals Heterostructures. ACS Applied Materials & Interfaces. 8(3). 1836–1841. 55 indexed citations

Tsipas, Polychronis, Dimitra Tsoutsou, Jose Marquez‐Velasco, et al.. (2015). Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates. Microelectronic Engineering. 147. 269–272. 33 indexed citations

Aretouli, K. E., Polychronis Tsipas, Dimitra Tsoutsou, et al.. (2015). Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy. Applied Physics Letters. 106(14). 117 indexed citations

Xenogiannopoulou, Evangelia, Polychronis Tsipas, K. E. Aretouli, et al.. (2015). High-quality, large-area MoSe₂ and MoSe₂/Bi₂Se₃ heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale. 7(17). 7896–7905. 115 indexed citations

Adikimenakis, A., A. Lotsari, G. P. Dimitrakopulos, et al.. (2015). Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire. Journal of Applied Physics. 117(24). 2 indexed citations

10.

Adikimenakis, A., K. E. Aretouli, K. Tsagaraki, M. Kayambaki, & A. Georgakilas. (2012). Mechanism of Si outdiffusion in plasma‐assisted molecular beam epitaxy of GaN on Si. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(1). 80–83. 2 indexed citations

11.

Adikimenakis, A., K. E. Aretouli, E. Iliopoulos, et al.. (2009). High electron mobility transistors based on the AlN/GaN heterojunction. Microelectronic Engineering. 86(4-6). 1071–1073. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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