Hideki Satake

1.6k citations

92 papers · 1.2k indexed · h-index 20

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in ⓘ

Electrical and Electronic Engineering 83
- Semiconductor materials and devices 79
- Advancements in Semiconductor Devices and Circuit Design 50
- Integrated Circuits and Semiconductor Failure Analysis 24
- Ferroelectric and Negative Capacitance Devices 12
Materials Chemistry 25
- Electronic and Structural Properties of Oxides 12
- Silicon Nanostructures and Photoluminescence 8

Co-authors: Akira Toriumi (58 shared papers)Yuichiro Mitani (19 shared papers)Shinichi Takagi (5 shared papers)Noburu Fukushima (10 shared papers)Naoki Yasuda (17 shared papers)Takeshi Yamaguchi (9 shared papers)Tomohisa Mizuno (2 shared papers)Naoharu Sugiyama (2 shared papers)
Journals: Japanese Journal of Applied Physics (6 papers)IEEE Transactions on Electron Devices (6 papers)Applied Physics Letters (5 papers)Microelectronic Engineering (4 papers)Journal of Applied Physics (3 papers)
Partner nations: Japan

In The Last Decade

Hideki Satake

89 papers receiving 1.2k citations

Peers

Countries citing papers authored by Hideki Satake

Since Specialization

Citations

This map shows the geographic impact of Hideki Satake's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hideki Satake with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hideki Satake more than expected).

Fields of papers citing papers by Hideki Satake

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hideki Satake. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hideki Satake. The network helps show where Hideki Satake may publish in the future.

Co-authors

The 25 scholars most cited alongside Hideki Satake, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hideki Satake Line = papers co-authored together Hideki Satake links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 92 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology IEEE Electron Device Letters ·Tomohisa Mizuno, Shinichi Takagi, Naoharu Sugiyama, Hideki Satake, A. Kurobe, Akira Toriumi	2000	165
2	NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON Yuichiro Mitani, M. Nagamine, Hideki Satake, Akira Toriumi	2003	71
3	Interfacial properties of single-crystalline CeO2 high-k gate dielectrics directly grown on Si (111) Applied Physics Letters ·Yukie Nishikawa, Takeshi Yamaguchi, Masahiko Yoshiki, Hideki Satake, Noburu Fukushima	2002	68
4	Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides Applied Physics Letters ·Hideki Satake, Naoki Yasuda, Shinichi Takagi, Akira Toriumi	1996	47
5	Applicability limits of the two-frequency capacitance measurement technique for the thickness extraction of ultrathin gate oxide IEEE Transactions on Semiconductor Manufacturing ·Akiko Nara, Naoki Yasuda, Hideki Satake, Akira Toriumi	2002	46
6	Influence of Nitrogen on Negative Bias Temperature Instability in Ultrathin SiON IEEE Transactions on Device and Materials Reliability ·Yuichiro Mitani, Hideki Satake, Akira Toriumi	2008	42
7	Observation of anisotropic microstructural changes during cycling in LiNi0.5Co0.2Mn0.3O2 cathode material Journal of Power Sources ·Hiromichi Kuriyama, Hidesato Saruwatari, Hideki Satake, Amika Shima, Fumihiko Uesugi, Hiroki Tanaka, Tooru Ushirogouchi	2014	42
8	Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides IEEE Transactions on Electron Devices ·Yuichiro Mitani, Hideki Satake, Yasushi Nakasaki, Akira Toriumi	2003	42
9	Physical random number generator based on MOS structure after soft breakdown IEEE Journal of Solid-State Circuits ·S. Yasuda, Hideki Satake, Tetsufumi Tanamoto, R. Ohba, Ken Uchida, Shinobu Fujita	2004	39
10	Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics IEEE Transactions on Electron Devices ·Hideki Satake, Akira Toriumi	2000	34
11	SiO₂dielectric breakdown mechanism studied by the post-breakdown resistance statistics Semiconductor Science and Technology ·Hideki Satake, Akira Toriumi	2000	33
12	Common origin for stress-induced leakage current and electron trap generation in SiO2 Applied Physics Letters ·Hideki Satake, Akira Toriumi	1995	30
13	Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure Applied Physics Letters ·Takeshi Yamaguchi, Hideki Satake, Noburu Fukushima, Akira Toriumi	2002	28
14	Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs Takeshi Yamaguchi, Ryosuke Iijima, Tsunehiro Ino, Akira Nishiyama, Hideki Satake, Noburu Fukushima	2003	26
15	Optimum structure of deposited ultrathin silicon oxynitride film to minimize leakage current Journal of Applied Physics ·Kouichi Muraoka, Kazuaki Kurihara, Naoki Yasuda, Hideki Satake	2003	24
16	A study of atomically-flat interface formation mechanism, based on the radical oxidation kinetics Microelectronic Engineering ·H. Itoh, M. Nagamine, Hideki Satake, Akira Toriumi	1999	22
17	Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf∕Al compositional ratio Journal of Applied Physics ·Masaru Kadoshima, Arito Ogawa, Hiroyuki Ota, Kunihiko Iwamoto, Masashi Takahashi, Nobuyuki Mise, Shinji Migita, Minoru Ikeda, Hideki Satake, Toshihide Nabatame, Akira Toriumi	2006	21
18	(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- $k$ MISFETs IEEE Transactions on Electron Devices ·Nobuyuki Mise, Shinji Migita, Yukimune Watanabe, Hideki Satake, Toshihide Nabatame, Akira Toriumi	2008	19
19	Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition Takeshi Yamaguchi, Hideki Satake, Noburu Fukushima, Akira Toriumi	2002	19
20	Band diagram and carrier conduction mechanisms in ZrO/sub 2/ MIS structures IEEE Transactions on Electron Devices ·Tomohiro Yamaguchi, Hideki Satake, Noburu Fukushima	2004	19

About Hideki Satake

Hideki Satake is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 92 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (79 papers), Advancements in Semiconductor Devices and Circuit Design (50 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers), Electronic and Structural Properties of Oxides (12 papers), Ferroelectric and Negative Capacitance Devices (12 papers), Semiconductor materials and interfaces (10 papers), Copper Interconnects and Reliability (9 papers) and Silicon Nanostructures and Photoluminescence (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (288 citations), Electronic, Optical and Magnetic Materials (91 citations), Atomic and Molecular Physics, and Optics (131 citations) and Hardware and Architecture (20 citations). Hideki Satake has collaborated with scholars based in Japan. Frequent co-authors include Akira Toriumi, Yuichiro Mitani, Shinichi Takagi, Noburu Fukushima, Naoki Yasuda, Takeshi Yamaguchi, Tomohisa Mizuno, Naoharu Sugiyama, A. Kurobe and M. Nagamine. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Applied Physics Letters, Microelectronic Engineering and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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