Y. Nakamura

1.1k citations

41 papers · 853 indexed · h-index 15

Atomic and Molecular Physics, and Optics top 5%
Electrical and Electronic Engineering top 10%
Biomedical Engineering
Materials Chemistry
Condensed Matter Physics top 10%

Co-authors: H. Sakaki S. Koshiba Takeshi Noda Masahiro Tsuchiya H. Kano Oliver G. Schmidt Suwit Kiravittaya H. Noge
Topics: Semiconductor Quantum Structures and Devices (30 papers)Quantum and electron transport phenomena (9 papers)Nanowire Synthesis and Applications (9 papers)
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Surface Science
Partner nations: Japan Germany United States

In The Last Decade

Y. Nakamura

40 papers receiving 826 citations

Peers

Countries citing papers authored by Y. Nakamura

Since Specialization

Citations

This map shows the geographic impact of Y. Nakamura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Nakamura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Nakamura more than expected).

Fields of papers citing papers by Y. Nakamura

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Nakamura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Nakamura. The network helps show where Y. Nakamura may publish in the future.

Co-authorship network of co-authors of Y. Nakamura

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Nakamura. A scholar is included among the top collaborators of Y. Nakamura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Nakamura. Y. Nakamura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Recessed gate GaN-based MIS-HEMTs with Al₂O₃ gate dielectric deposited by mist-CVD method 2021 ·(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),Joel T. Asubar,(unknown),Y. Nakamura,Zenji Yatabe,Masaaki Kuzuhara	0
2	Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump 2005 ·Yoshimasa Sugimoto,Kuon Inoue,Naoki Ikeda,(unknown),Yu Tanaka,Y. Nakamura,(unknown),Hisashi Sasaki,Kenji Ishida,K. Asakawa	1
3	Nonlinear optical phase shift in InAs quantum dots measured by a unique two-color pump∕probe ellipsometric polarization analysis 2004 ·Journal of Applied Physics ·Hitoshi Nakamura,K. Kanamoto,Y. Nakamura,Shunsuke Ohkouchi,Hiroshi Ishikawa,K. Asakawa	24
4	Two‐dimensional ordering of InGaAs quantum dots formed on an artificial nano‐hole array with 100 nm periodicity 2003 ·physica status solidi (b) ·Y. Nakamura,Naoki Ikeda,Yoshimasa Sugimoto,Hitoshi Nakamura,Shunsuke Ohkouchi,K. Asakawa	14
5	Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (001) GaAs substrates 2002 ·Journal of Crystal Growth ·Y. Nakamura,Oliver G. Schmidt,N. Y. Jin-Phillipp,Suwit Kiravittaya,Christian Müller,K. Eberl,H. Gräbeldinger,H. Schweizer	60
6	Height control of InAs/GaAs quantum dots by combining layer-by-layer in situ etching and molecular beam epitaxy 2002 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Tao Yang,T. Ishikawa,S. Kohmoto,Y. Nakamura,Hiroshi Nakamura,K. Asakawa	4
7	Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes 2002 ·IEEE Journal of Selected Topics in Quantum Electronics ·Oliver G. Schmidt,Christoph Deneke,Suwit Kiravittaya,R. Songmuang,H. Heidemeyer,Y. Nakamura,Renate Zapf‐Gottwick,Christian Müller,N. Y. Jin-Phillipp	90
8	Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots 2002 ·Physica E Low-dimensional Systems and Nanostructures ·Suwit Kiravittaya,Y. Nakamura,Oliver G. Schmidt	29
9	Transformation of GaAs (001)–(111)B facet structure by surface diffusion during molecular beam epitaxy on patterned substrates 2001 ·Journal of Crystal Growth ·S. Koshiba,Y. Nakamura,Takeshi Noda,Shinichi Watanabe,Hidefumi Akiyama,H. Sakaki	6
10	(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation 2000 ·Journal of Crystal Growth ·Daisuke Kishimoto,Tatau Nishinaga,Shigeya Naritsuka,Takeshi Noda,Y. Nakamura,H. Sakaki	7
11	Anisotropic mobilities of low-dimensional electrons at stepped n-AlGaAs/GaAs interfaces with 15 nm periodicity on vicinal (111)B substrates 2000 ·Physica E Low-dimensional Systems and Nanostructures ·Y. Nakamura,Takeshi Noda,J. Motohisa,H. Sakaki	14
12	Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication 2000 ·Journal of Crystal Growth ·Daisuke Kishimoto,Takeshi Noda,Y. Nakamura,H. Sakaki,Tatau Nishinaga	4
13	UHV-AFM study of MBE-grown 10 nm scale ridge quantum wires 1997 ·Journal of Crystal Growth ·S. Koshiba,Ichiro Tanaka,Y. Nakamura,Itaru Kamiya,Takao Someya,(unknown),H. Sakaki	6
14	Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states 1997 ·Applied Physics Letters ·M. Narihiro,G. Yusa,Y. Nakamura,Takeshi Noda,H. Sakaki	105
15	Studies on interface roughness scattering effects in molecular beam epitaxy grown resonant tunneling structures 1995 ·Journal of Crystal Growth ·Takeshi Hoshida,Masahiro Tsuchiya,Y. Nakamura,T. Kamiya	1
16	Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy 1995 ·Journal of Crystal Growth ·S. Koshiba,Takeshi Noda,H. Noge,Y. Nakamura,Hiroshi Ichinose,T. Shitara,Dimitri D. Vvedensky,H. Sakaki	15
17	Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures 1994 ·Journal of Applied Physics ·S. Koshiba,Y. Nakamura,Masahiro Tsuchiya,H. Noge,H. Kano,Y. Nagamune,Takeshi Noda,H. Sakaki	79
18	Modulation of one-dimensional electron density in n-AlGaAs/GaAs edge quantum wire transistor 1994 ·Applied Physics Letters ·Y. Nakamura,Masahiro Tsuchiya,S. Koshiba,H. Noge,H. Sakaki	20
19	Formation of N-AlGaAs/GaAs edge quantum wire on (111)B micro facet by MBE and magnetic depopulation of quasi-one-dimensional electron gas 1994 ·Solid-State Electronics ·Y. Nakamura,Masahiro Tsuchiya,J. Motohisa,H. Noge,S. Koshiba,H. Sakaki	7
20	MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations 1994 ·Solid-State Electronics ·S. Koshiba,H. Noge,Hiroshi Ichinose,Hidefumi Akiyama,Y. Nakamura,Takeshi Inoshita,Takao Someya,Kazumi Wada,Akira Shimizu,H. Sakaki	16

About Y. Nakamura

Y. Nakamura is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering, having authored 41 papers that have together received 853 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (30 papers), Quantum and electron transport phenomena (9 papers) and Nanowire Synthesis and Applications (9 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (743 citations), Condensed Matter Physics (139 citations) and Electrical and Electronic Engineering (552 citations). Y. Nakamura has collaborated with scholars based in Japan, Germany and United States. Frequent co-authors include H. Sakaki, S. Koshiba, Takeshi Noda, Masahiro Tsuchiya, H. Kano, Oliver G. Schmidt, Suwit Kiravittaya, H. Noge, Christian Müller and N. Y. Jin-Phillipp. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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