J. G. Belk

896 total citations
20 papers, 746 citations indexed

About

J. G. Belk is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, J. G. Belk has authored 20 papers receiving a total of 746 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 9 papers in Electrical and Electronic Engineering and 3 papers in Biomedical Engineering. Recurrent topics in J. G. Belk's work include Semiconductor Quantum Structures and Devices (19 papers), Surface and Thin Film Phenomena (11 papers) and Advanced Semiconductor Detectors and Materials (8 papers). J. G. Belk is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Surface and Thin Film Phenomena (11 papers) and Advanced Semiconductor Detectors and Materials (8 papers). J. G. Belk collaborates with scholars based in United Kingdom and Japan. J. G. Belk's co-authors include B.A. Joyce, J. L. Sudijono, T. S. Jones, T.S. Jones, C. F. McConville, D. W. Pashley, Hiroshi Yamaguchi, B.A. Joyce, J.H. Neave and G. R. Bell and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. G. Belk

19 papers receiving 729 citations

Peers

J. G. Belk

AMPO

EEE

CMP

J. L. Sudijono United Kingdom

Y. Nakamura Japan

V. Bressler-Hill United States

G. R. Bell United Kingdom

S. Koshiba Japan

L. Leprince France

M. Quillec France

M. A. Lutz United States

J. Komeno Japan

B. R. Semyagin Russia

J. L. Sudijono United Kingdom

J. G. Belk

743 ×1.1

AMPO

424 ×1.0

EEE

228 ×1.0

136 ×1.0

104 ×1.1

CMP

Citations per year, relative to J. G. Belk J. G. Belk (= 1×) peers J. L. Sudijono

Countries citing papers authored by J. G. Belk

Since Specialization

Citations

This map shows the geographic impact of J. G. Belk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. G. Belk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. G. Belk more than expected).

Fields of papers citing papers by J. G. Belk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. G. Belk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. G. Belk. The network helps show where J. G. Belk may publish in the future.

Co-authorship network of co-authors of J. G. Belk

This figure shows the co-authorship network connecting the top 25 collaborators of J. G. Belk. A scholar is included among the top collaborators of J. G. Belk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. G. Belk. J. G. Belk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Joyce, B.A., Dimitri D. Vvedensky, T.S. Jones, et al.. (1999). In situ studies of III–V semiconductor film growth by molecular beam epitaxy. Journal of Crystal Growth. 201-202. 106–112. 16 indexed citations

Bell, G. R., J. G. Belk, C. F. McConville, & T.S. Jones. (1999). Species intermixing and phase transitions on the reconstructed (001) surfaces of GaAs and InAs. Physical review. B, Condensed matter. 59(4). 2947–2955. 54 indexed citations

Joyce, B.A., Dimitri D. Vvedensky, G. R. Bell, et al.. (1999). Nucleation and growth mechanisms during MBE of III–V compounds. Materials Science and Engineering B. 67(1-2). 7–16. 34 indexed citations

Belk, J. G., D. W. Pashley, B.A. Joyce, & T. S. Jones. (1998). Dislocation displacement field at the surface of InAs thin films grown on GaAs(110). Physical review. B, Condensed matter. 58(24). 16194–16201. 22 indexed citations

Joyce, B.A., Dimitri D. Vvedensky, A. R. Avery, et al.. (1998). Nucleation mechanisms during MBE growth of lattice-matched and strained III–V compound films. Applied Surface Science. 130-132. 357–366. 22 indexed citations

Joyce, B.A., T. S. Jones, & J. G. Belk. (1998). Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(4). 2373–2380. 48 indexed citations

Belk, J. G., D. W. Pashley, C. F. McConville, B.A. Joyce, & T.S. Jones. (1998). Surface morphology during strain relaxation in the growth of InAs on GaAs(110). Surface Science. 410(1). 82–98. 19 indexed citations

Belk, J. G., C. F. McConville, J. L. Sudijono, T.S. Jones, & B.A. Joyce. (1997). Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy. Surface Science. 387(1-3). 213–226. 101 indexed citations

Belk, J. G., et al.. (1997). Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy. Physical Review Letters. 78(3). 475–478. 85 indexed citations

10.

Yamaguchi, Hiroshi, J. G. Belk, J. L. Sudijono, et al.. (1997). Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy. Applied Surface Science. 112. 138–141. 2 indexed citations

11.

Yamaguchi, Hiroshi, J. G. Belk, J. L. Sudijono, et al.. (1997). Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A. Physical review. B, Condensed matter. 55(3). 1337–1340. 127 indexed citations

12.

Belk, J. G., J. L. Sudijono, Hiroshi Yamaguchi, et al.. (1997). Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(3). 915–918. 19 indexed citations

13.

Belk, J. G., D. W. Pashley, C. F. McConville, et al.. (1997). Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy. Physical review. B, Condensed matter. 56(16). 10289–10296. 18 indexed citations

14.

Yamaguchi, Hiroshi, J. G. Belk, J. L. Sudijono, et al.. (1997). RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A. Microelectronics Journal. 28(8-10). 825–831. 2 indexed citations

15.

Joyce, B.A., J. L. Sudijono, J. G. Belk, et al.. (1997). A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes. Japanese Journal of Applied Physics. 36(6S). 4111–4111. 72 indexed citations

16.

Joyce, B.A., J.H. Neave, M.R. Fahy, et al.. (1996). Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy. Journal of Materials Science Materials in Electronics. 7(5). 2 indexed citations

17.

Belk, J. G., J. L. Sudijono, D. M. Holmes, et al.. (1996). Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4 × 4). Surface Science. 365(3). 735–742. 43 indexed citations

18.

Holmes, D. M., J. G. Belk, J. L. Sudijono, et al.. (1996). Different growth modes in GaAs(110) homoepitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 849–853. 19 indexed citations

19.

Holmes, D. M., J. G. Belk, J. Sudijono, et al.. (1995). Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy. Applied Physics Letters. 67(19). 2848–2850. 19 indexed citations

20.

Holmes, D. M., J. G. Belk, J. L. Sudijono, et al.. (1995). The nature of island formation in the homoepitaxial growth of GaAs(110). Surface Science. 341(1-2). 133–141. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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