M. Narihiro
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- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 10
- Integrated Circuits and Semiconductor Failure Analysis 6
- Advancements in Photolithography Techniques 4
- Ferroelectric and Negative Capacitance Devices 4
- Advanced Memory and Neural Computing 4
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- Semiconductor materials and interfaces 6
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- Copper Interconnects and Reliability 10
- Cited by
- Electrical and Electronic EngineeringAtomic and Molecular Physics, and OpticsElectronic, Optical and Magnetic Materials
- Journals
- IEEE Transactions on Electron Devices (6 papers)Japanese Journal of Applied Physics (5 papers)Microelectronic Engineering (1 paper)
- Partner nations
- JapanUnited States
In The Last Decade
M. Narihiro
31 papers receiving 430 citations
Peers
Comparison fields: 5 of 27
- Electrical and Electronic Engineering 405
- Atomic and Molecular Physics, and Optics 133
- Electronic, Optical and Magnetic Materials 41
- Materials Chemistry 61
- Biomedical Engineering 58
Countries citing papers authored by M. Narihiro
This map shows the geographic impact of M. Narihiro's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Narihiro with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Narihiro more than expected).
Fields of papers citing papers by M. Narihiro
This network shows the impact of papers produced by M. Narihiro. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Narihiro. The network helps show where M. Narihiro may publish in the future.
Co-authorship network
The 25 scholars most cited alongside M. Narihiro, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2017 | 3 | |
| 2 | 2015 | 44 | |
| 3 | 2015 | 25 | |
| 4 | 2014 | 6 | |
| 5 | High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels | 2013 | 10 |
| 6 | 2012 | 8 | |
| 7 | 2012 | 17 | |
| 8 | 2011 | 5 | |
| 9 | 2009 | 2 | |
| 10 | 2009 | 7 | |
| 11 | 2007 | 14 | |
| 12 | 2007 | 6 | |
| 13 | 2006 | 2 | |
| 14 | 2006 | 4 | |
| 15 | 2006 | 8 | |
| 16 | 2005 | 5 | |
| 17 | 2002 | 1 | |
| 18 | 2002 | 32 | |
| 19 | 1999 | 5 | |
| 20 | 1997 | 105 |
About M. Narihiro
M. Narihiro is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 32 papers that have together received 447 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Copper Interconnects and Reliability (10 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and interfaces (6 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Advancements in Photolithography Techniques (4 papers), Ferroelectric and Negative Capacitance Devices (4 papers) and Advanced Memory and Neural Computing (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (405 citations), Atomic and Molecular Physics, and Optics (133 citations), Electronic, Optical and Magnetic Materials (41 citations), Materials Chemistry (61 citations) and Biomedical Engineering (58 citations). M. Narihiro has collaborated with scholars based in Japan and United States. Frequent co-authors include Takeshi Noda, H. Sakaki, Y. Nakamura, G. Yusa, Yukinori Ochiai, Tohru Mogami, Y. Hayashi, N. Furutake, Hitoshi Wakabayashi and Kiyoshi Takeuchi. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, Microelectronic Engineering, Applied Physics Letters and IEEE Transactions on Device and Materials Reliability.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.